Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology JANTXV1N6643U

Name: JANTXV1N6643U
Brand: Microchip Technology
SKU: JANTXV1N6643U
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: JANTXV1N6643U

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: JANTXV1N6643U.pdf

Description:: DIODE GEN PURP 75V 300MA D-5D

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,368

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

JANTXV1N6643U from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D non-cavity glass package, rated for 75 V peak reverse voltage (V_RWM), 50 mA forward current (I_F), and 6.0 ns reverse recovery time (t_rr), used in high-reliability pulse shaping and clamping circuits in aerospace power conditioning systems.

For engineers reviewing the JANTXV1N6643U datasheet, JANTXV1N6643U pinout, JANTXV1N6643U application, or JANTXV1N6643U equivalent, key selection criteria include its MIL-PRF-19500/578 qualification, -65°C to +175°C operating temperature range, 50 V DC blocking capability, 1.0 V forward voltage at 10 mA, and 50 nA reverse leakage at 20 V - all critical for radiation-tolerant analog signal routing.

Technical Context

This diode operates as a fast-switching unidirectional rectifier with defined junction capacitance (5.0 pF at 0 V, 2.8 pF at V_RWM) and thermally stable reverse recovery behavior across -65°C to +150°C junction temperatures. Its metallurgical bond and hermetic D-5D package ensure low thermal resistance (50 °C/W max) and mechanical robustness under shock/vibration.

The device exhibits a forward voltage of 1.0 V at 10 mA and 1.2 V at 100 mA pulsed, with reverse leakage limited to 50 nA at 20 V and 75 µA at V_RWM = 50 V, supporting precise timing and low-distortion waveform control in high-speed analog front-ends.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	50 V DC - maximum continuous reverse working voltage before significant leakage or breakdown
V_BR	75 V pk - peak reverse voltage at which breakdown current reaches 100 µA, defining overvoltage margin
t_rr	6.0 ns - reverse recovery time measured at I_F = 100 mA, I_R = 1 mA, critical for >10 MHz switching
V_F @ 10 mA	1.0 V - forward voltage drop determining conduction loss in low-duty-cycle clamp circuits
C_T @ 0 V	5.0 pF - junction capacitance at zero bias, directly affecting high-frequency signal integrity and rise-time distortion
I_R @ 20 V	50 nA - reverse leakage current at moderate reverse bias, enabling low-power hold-off in sample-and-hold stages
Operating Temp	-65°C to +175°C - full military-grade junction temperature range verified per MIL-PRF-19500/578

Pinout & Package

Package: D-5D hermetically sealed glass case, axial lead, cathode indicated by band, tin/lead lead finish, 1.78–2.16 mm diameter, 4.19–4.95 mm body length.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential node in clamping or protection paths; must withstand 300 mA continuous and 2.5 A surge
Cathode	Forward current exit / reverse blocking terminal	Banded end; referenced to system ground or higher-potential rail; defines polarity-sensitive placement on PCB

Key Features

Feature	Design Value
MIL-PRF-19500/578 Qualified	Qualified to Class V (JANTXV) for space-level reliability, including burn-in, life test, and radiation tolerance screening
Hermetic D-5D Glass Package	Eliminates moisture ingress and intermetallic degradation, ensuring >20-year shelf life and stable C_T/V_F over temperature
Metallurgical Bond Construction	Enables low thermal resistance (50 °C/W) and high surge survivability (2.5 A, 8.3 ms half-sine)
Low t_rr / Low C_T Trade-off Optimized	6.0 ns t_rr with 5.0 pF C_T @ 0 V supports clean edge fidelity in <100 ns pulse applications without excessive ringing
Wide Temperature Operation	Specified performance from -65°C to +175°C enables use in engine-mounted avionics and downhole telemetry without derating

Applications

Aerospace Power Sequencing	Rad-Hard Signal Clamping
Use Scenario: Controlling power-up order of FPGAs and ADCs in satellite payload controllers using discrete diode-based delay networks. IC Role / Device Role / Timing Role: Fast-switching diode providing precise, temperature-stable forward voltage drop to set sequential enable timing windows. Use Value: 1.0 V V_F at 10 mA and 6.0 ns t_rr ensure sub-microsecond timing resolution across -65°C to +125°C operational range.	Use Scenario: Protecting analog front-end inputs of radiation-hardened op-amps from ESD and transient overvoltage in launch vehicle telemetry systems. IC Role / Device Role / Timing Role: Low-capacitance clamping diode shunting transients to rail while preserving signal bandwidth. Use Value: 5.0 pF C_T @ 0 V and 50 nA I_R @ 20 V minimize loading and DC offset error in 10–100 MHz sensor interfaces.
High-Temp Downhole Sensing	Military Radar Pulse Shaping
Use Scenario: Biasing and protecting piezoelectric sensor amplifiers in oil/gas well logging tools exposed to 175°C ambient. IC Role / Device Role / Timing Role: Reverse-blocking element maintaining isolation between high-voltage bias rails and low-noise amplifier inputs. Use Value: Guaranteed operation at +175°C junction temperature and 75 µA I_R @ V_RWM prevent thermal runaway in sealed probe housings.	Use Scenario: Forming leading/trailing edge sharpening networks in X-band radar modulator stages requiring nanosecond transitions. IC Role / Device Role / Timing Role: Fast recovery diode in step-recovery or snap-off configurations generating harmonics and sharp edges. Use Value: 6.0 ns t_rr and metallurgical bond construction support repeatable sub-10 ns edge generation under 2.5 A surge conditions.

Aerospace Power Sequencing

Rad-Hard Signal Clamping

Use Scenario: Controlling power-up order of FPGAs and ADCs in satellite payload controllers using discrete diode-based delay networks.

IC Role / Device Role / Timing Role: Fast-switching diode providing precise, temperature-stable forward voltage drop to set sequential enable timing windows.

Use Value: 1.0 V V_F at 10 mA and 6.0 ns t_rr ensure sub-microsecond timing resolution across -65°C to +125°C operational range.

Use Scenario: Protecting analog front-end inputs of radiation-hardened op-amps from ESD and transient overvoltage in launch vehicle telemetry systems.

IC Role / Device Role / Timing Role: Low-capacitance clamping diode shunting transients to rail while preserving signal bandwidth.

Use Value: 5.0 pF C_T @ 0 V and 50 nA I_R @ 20 V minimize loading and DC offset error in 10–100 MHz sensor interfaces.

High-Temp Downhole Sensing

Military Radar Pulse Shaping

Use Scenario: Biasing and protecting piezoelectric sensor amplifiers in oil/gas well logging tools exposed to 175°C ambient.

IC Role / Device Role / Timing Role: Reverse-blocking element maintaining isolation between high-voltage bias rails and low-noise amplifier inputs.

Use Value: Guaranteed operation at +175°C junction temperature and 75 µA I_R @ V_RWM prevent thermal runaway in sealed probe housings.

Use Scenario: Forming leading/trailing edge sharpening networks in X-band radar modulator stages requiring nanosecond transitions.

IC Role / Device Role / Timing Role: Fast recovery diode in step-recovery or snap-off configurations generating harmonics and sharp edges.

Use Value: 6.0 ns t_rr and metallurgical bond construction support repeatable sub-10 ns edge generation under 2.5 A surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
JANTXV1N6642U	V_RWM = 75 V, t_rr = 5.0 ns, C_T = 5.0 pF @ 0 V, V_F = 0.8 V @ 10 mA	Lower forward drop and faster recovery, but reduced reverse leakage margin (25 nA vs 50 nA @ 20 V)	Select when lower conduction loss and tighter timing control outweigh higher sensitivity to reverse-bias noise.
JANTXV1N6638U	V_RWM = 125 V, t_rr = 4.5 ns, C_T = 2.5 pF @ 0 V, V_F = 0.8 V @ 10 mA	Higher voltage rating and lower capacitance, but narrower temperature margin for leakage (35 nA @ 20 V)	Prefer for >100 V clamping where minimal capacitive loading dominates over leakage-limited dynamic range.

Compared with JANTXV1N6642U and JANTXV1N6638U, the JANTXV1N6643U provides the optimal balance of 50 V blocking, 6.0 ns recovery, and 50 nA low-leakage performance - making it preferred for precision analog clamping where V_RWM headroom and leakage-induced offset must both be tightly controlled.

Availability

JANTXV1N6643U is available at Aetrix Electronics and suitable for aerospace power sequencing, rad-hard signal clamping, and high-temp downhole sensing requiring stable component supply across extended temperature and radiation environments.

Supply support for JANTXV1N6643U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal components for defense, aerospace, and industrial applications, with emphasis on radiation-hardened and extended-temperature solutions.

The 1N66xxU series delivers MIL-PRF-19500/578-qualified fast switching diodes optimized for precision timing, transient suppression, and signal integrity preservation in mission-critical analog subsystems.

FAQ

What is the maximum junction temperature rating for JANTXV1N6643U?

The JANTXV1N6643U is rated for continuous operation from -65°C to +175°C junction temperature, with thermal resistance (R_θJA) of 50 °C/W maximum at L = 0. This rating is verified per MIL-PRF-19500/578 and applies across all JANTXV screening levels. Derating begins above +110°C ambient at 4.6 mA/°C. The JANTXV1N6643U maintains specified V_F, t_rr, and I_R performance within this full range.

Is JANTXV1N6643U suitable for high-frequency RF switching applications?

Yes - the JANTXV1N6643U supports RF switching up to ~100 MHz due to its 5.0 pF junction capacitance at 0 V and 6.0 ns reverse recovery time. Its low C_T minimizes signal attenuation, while fast t_rr ensures clean transitions. However, it is not characterized for S-parameters or impedance matching; for >500 MHz use, consult Microsemi's RF diode portfolio. The JANTXV1N6643U remains valid for harmonic generation and pulse sharpening below 200 MHz.

What does the "U" suffix indicate in JANTXV1N6643U?

Per MIL-PRF-19500/578, the "U" suffix denotes a non-cavity glass package with metallurgical bonding and axial leads in the D-5D outline. It distinguishes this construction from the "US" variant (same electrical specs but different internal geometry). Both meet identical electrical and environmental requirements, but the JANTXV1N6643U is specifically qualified for applications requiring the D-5D mechanical form factor and thermal profile.

How does JANTXV1N6643U compare to commercial-grade 1N4148 in high-reliability designs?

The JANTXV1N6643U exceeds 1N4148 in temperature range (-65°C to +175°C vs -65°C to +200°C but with no military screening), radiation tolerance, hermeticity, and parameter stability. While 1N4148 offers lower cost and wider availability, it lacks MIL-PRF-19500/578 qualification, has higher C_T (~4 pF), and unspecified t_rr variation over temperature. The JANTXV1N6643U is required where traceability, lot control, and guaranteed parametric limits across extreme environments are mandatory.

What is the surge current rating for JANTXV1N6643U?

The JANTXV1N6643U is rated for 2.5 A peak surge current (I_FSM) under an 8.3 ms half-sine wave condition, per MIL-PRF-19500/578. This rating assumes proper heatsinking and transient duration compliance. The metallurgical bond and hermetic D-5D package enable reliable energy absorption without bond-wire fusing. For repetitive surges, average power dissipation must remain within the 300 mA continuous rating. The JANTXV1N6643U data sheet specifies no derating for this surge limit.

JANTXV1N6643U Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 75 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.2 V @ 100 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 20 ns

Current - Reverse Leakage @ Vr:: 500 nA @ 75 V

Capacitance @ Vr, F:: 5pF @ 0V, 1MHz

Grade:: Military

Qualification:: MIL-PRF-19500/578

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

JANTXV1N6643U FAQ

1.How can I place an order for JANTXV1N6643U through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6643U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6643U reliable?

The price and inventory of JANTXV1N6643U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6643U is usually 5 days.

3.What payment methods are accepted for JANTXV1N6643U?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6643U transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6643U?

JANTXV1N6643U orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6643U order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6643U?

For technical support, including JANTXV1N6643U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6643U requirements.

6.How does Aetrix verify that JANTXV1N6643U is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6643U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6643U meets industry standards.

7.What is the process for return or replacement of JANTXV1N6643U?

All JANTXV1N6643U units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6643U, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6643U part is unused and in its original packaging.

Return procedure for JANTXV1N6643U:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…