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Microchip Technology JANTXV1N6643US/TR
- Part No.:
- JANTXV1N6643US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, D
- Datasheet:
-
JANTXV1N6643US/TR.pdf
- Description:
- SIGNAL OR COMPUTER DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:5,135
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Product details
Overview
JANTXV1N6643US/TR from Microsemi is a hermetically sealed, ultra-fast switching diode in D-5D (SQ-MELF) package, rated for 75 V breakdown voltage, 50 V working peak reverse voltage, and 6.0 ns reverse recovery time. It delivers low forward voltage (0.8 V @ 10 mA), very low junction capacitance (2.8 pF @ 1.5 V), and operates across –65 °C to +175 °C - used in high-frequency data lines, RS-232/RS-422 interfaces, and Ethernet 10 Base-T receivers.
For engineers reviewing the JANTXV1N6643US/TR datasheet, JANTXV1N6643US/TR pinout, JANTXV1N6643US/TR application, or JANTXV1N6643US/TR equivalent, key selection criteria include reverse recovery time, VRWM, junction capacitance, thermal resistance (RθJEC = 40 °C/W), and MIL-PRF-19500/578 JANTXV qualification for ruggedized embedded timing and signal routing.
Technical Context
This diode employs metallurgically bonded, voidless hard-glass construction to ensure reliability under extreme thermal cycling and radiation environments. Its non-cavity glass package and tin-lead terminations support solder dip compatibility and stable performance at junction temperatures up to +175 °C.
The device is characterized with IF = IR = 10 mA, IR(REC) = 1.0 mA, C = 3 pF, and RL = 100 Ω for trr measurement, and exhibits consistent VF and IR across –65 °C to +150 °C per MIL-PRF-19500/578 test protocols.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 75 V minimum - ensures safe operation under transient overvoltage up to rated limit without avalanche conduction. |
| Working Peak Reverse Voltage (VRWM) | 50 V - maximum continuous reverse bias in normal operation before leakage increases significantly. |
| Reverse Recovery Time (trr) | 6.0 ns - enables reliable switching at >100 MHz in high-speed digital signal routing and interface protection. |
| Junction Capacitance (C) | 2.8 pF @ 1.5 V - minimizes signal distortion and loading on high-frequency data lines such as RS-422 or Ethernet PHYs. |
| Forward Voltage (VF) | 0.8 V @ 10 mA - reduces power loss and self-heating in low-current logic-level clamping and steering applications. |
| Thermal Resistance (RθJEC) | 40 °C/W - allows direct heat transfer from junction to end cap, supporting high-reliability mounting on thermally conductive substrates. |
| Operating Temperature Range | –65 °C to +175 °C - qualified for aerospace, downhole, and military systems requiring extended thermal margin. |
Pinout & Package
D-5D (SQ-MELF) surface-mount package: cylindrical, hermetically sealed hard-glass body with axial symmetry; cathode indicated by painted band; tin-lead plated terminals; dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in clamping, steering, or rectification paths; requires thermal anchoring for sustained 300 mA operation. |
| Cathode | Forward current exit / reverse blocking terminal | Marked by painted band; serves as reference node for reverse-biased protection circuits and high-speed signal return paths. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast recovery | 6.0 ns trr enables clean edge transitions in >100 MHz clock/data routing without tail current interference. |
| Hermetic glass seal | Voidless construction prevents moisture ingress and parametric drift over 20+ year service life in sealed enclosures. |
| MIL-PRF-19500/578 JANTXV qualification | Full screening per military standard including burn-in, temperature cycling, and lot acceptance testing for flight-critical use. |
| Low junction capacitance | 2.8 pF at 1.5 V minimizes capacitive loading on high-impedance nodes in analog front-ends and receiver inputs. |
| Metallurgical bonding | Direct die-to-leadframe bond eliminates wire bonds, improving mechanical robustness and thermal conductivity vs. epoxy-packaged alternatives. |
Applications
| High-Frequency Data Lines | RS-232 / RS-422 Interface Networks |
|---|---|
Use Scenario: Signal integrity preservation in multi-drop serial buses operating above 10 Mbps with tight rise/fall times. IC Role / Device Role / Timing Role: High-speed clamping diode protecting transceiver I/O pins from ESD and overshoot. Use Value: 6.0 ns trr and 2.8 pF capacitance prevent pulse distortion while maintaining ±15 kV HBM ESD robustness via system-level design. | Use Scenario: Bidirectional level translation and fault isolation between UART peripherals and line drivers. IC Role / Device Role / Timing Role: Steering diode in fail-safe termination networks and common-mode transient suppressors. Use Value: 50 V VRWM and –65 °C to +175 °C range ensure uninterrupted operation during industrial voltage surges and ambient extremes. |
| Ethernet 10 Base-T Receivers | Switching Core Drivers |
Use Scenario: Input protection of transformer-coupled PHY receivers exposed to induced lightning transients. IC Role / Device Role / Timing Role: Low-capacitance reverse-biased clamp limiting differential input swing to safe levels. Use Value: 2.8 pF capacitance avoids degrading 10 MHz bandwidth; 75 V VBR withstands IEEE 802.3 specified surge tests. | Use Scenario: Freewheeling path in magnetic core memory drivers and thin-film memory word-line switches. IC Role / Device Role / Timing Role: Fast-recovery flyback diode managing inductive kickback from ferrite-core windings. Use Value: 6.0 ns trr prevents voltage spikes >100 V; metallurgical bond sustains repeated 2.5 A surge events without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-fast switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148UR-1 | Commercial-grade, non-hermetic plastic package; trr = 4 ns, VRWM = 75 V, C = 4 pF. | Lacks MIL qualification, thermal range limited to –65 °C to +175 °C not verified; unsuitable for space or avionics. | Select when cost-sensitive commercial designs require faster trr but can accept reduced reliability and no military screening. |
| JANTXV1N6642US/TR | Same package and qualification; higher VRWM (75 V) and VBR (100 V); identical trr (5.0 ns) and C (2.8 pF). | Better suited for 48 V telecom or higher-voltage industrial bus protection where 50 V VRWM is marginal. | Choose for upgraded reverse voltage margin without layout change - same footprint and thermal behavior. |
Compared with 1N4148UR-1 and JANTXV1N6642US/TR, JANTXV1N6643US/TR uniquely balances 50 V VRWM, 6.0 ns trr, and full JANTXV screening in a hermetic SQ-MELF package - making it optimal for mission-critical 10–50 V signal routing where long-term parametric stability is mandatory.
Availability
JANTXV1N6643US/TR is available at Aetrix Electronics and suitable for high-frequency data lines, RS-232/RS-422 interface networks, and Ethernet 10 Base-T receivers requiring stable component supply across extended temperature and long lifecycle programs.
Supply support for JANTXV1N6643US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N6643US/TR belongs to Microsemi's military-qualified switching diode family, engineered for signal integrity and survivability in harsh-environment digital and communication systems.
FAQ
What is the reverse recovery time specification for JANTXV1N6643US/TR?
JANTXV1N6643US/TR has a reverse recovery time (trr) of 6.0 ns, measured under IF = IR = 10 mA, IR(REC) = 1.0 mA, C = 3 pF, and RL = 100 Ω. This value is guaranteed per MIL-PRF-19500/578 test conditions and supports reliable operation in >100 MHz digital signal paths. The 6.0 ns trr is confirmed in the official T4-LDS-0218-1 Rev. 2 datasheet for JANTXV1N6643US/TR.
Is JANTXV1N6643US/TR RoHS compliant?
No, JANTXV1N6643US/TR is not RoHS compliant. Per the datasheet, RoHS-compliant versions (e3 suffix) are available only for commercial-grade variants, not for JANTXV-level qualified parts. JANTXV1N6643US/TR uses tin-lead plated terminals to meet MIL-PRF-19500/578 solderability and reliability requirements, and its lead content is exempt under RoHS Annex III for high-reliability military applications.
What package type does JANTXV1N6643US/TR use?
JANTXV1N6643US/TR uses the D-5D package - a hermetically sealed, square-end MELF (SQ-MELF) format with hard glass construction. Dimensions are BD = 0.070–0.085 in and BL = 0.165–0.195 in. The package features axial symmetry, cathode band marking, and tin-lead terminations. This is explicitly defined in the mechanical drawings of T4-LDS-0218-1 Rev. 2 for JANTXV1N6643US/TR.
How does JANTXV1N6643US/TR differ from JANTXV1N6642US/TR?
JANTXV1N6643US/TR and JANTXV1N6642US/TR share identical package, qualification level, trr (6.0 ns vs. 5.0 ns), and junction capacitance (2.8 pF), but differ in voltage ratings: JANTXV1N6643US/TR has VRWM = 50 V and VBR = 75 V, while JANTXV1N6642US/TR offers VRWM = 75 V and VBR = 100 V. Both are JANTXV-qualified and interchangeable in footprint, but voltage selection must match system transient limits. This distinction is documented in the Maximum Ratings table of T4-LDS-0218-1 Rev. 2 for JANTXV1N6643US/TR.
What is the maximum average forward current rating for JANTXV1N6643US/TR?
The maximum average rectified forward current (IO) for JANTXV1N6643US/TR is 300 mA at TA = +75 °C, with derating at 4.6 mA/°C above TEC = +110 °C. This rating assumes mounting on an FR4 PCB with defined pad geometry and thermal conditions per Note 1 in the datasheet. The 300 mA IO rating is validated under MIL-PRF-19500/578 thermal testing and applies specifically to JANTXV1N6643US/TR.
JANTXV1N6643US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, D
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 50 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/578
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5D
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N6643US/TR FAQ
1.How can I place an order for JANTXV1N6643US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6643US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6643US/TR reliable?
The price and inventory of JANTXV1N6643US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6643US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6643US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6643US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6643US/TR?
JANTXV1N6643US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6643US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6643US/TR?
For technical support, including JANTXV1N6643US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6643US/TR requirements.
6.How does Aetrix verify that JANTXV1N6643US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6643US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6643US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6643US/TR?
All JANTXV1N6643US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6643US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6643US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6643US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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