STMicroelectronics L6384D013TR
- Part No.:
- L6384D013TR
- Manufacturer:
- STMicroelectronics
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
L6384D013TR.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:1,304
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Product details
Overview
L6384D013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control N-channel power MOSFETs and IGBTs in switching power converters. It features 600 V rail capability, ±50 V/ns dV/dt immunity across −45°C to +125°C, 400 mA source / 650 mA sink output drive, 50/30 ns rise/fall times (1 nF load), and integrated bootstrap diode replacement. It is used in motor drives, SMPS, and induction heating inverters.
For engineers reviewing the L6384D013TR datasheet, L6384D013TR pinout, L6384D013TR application, or L6384D013TR equivalent, key selection criteria include floating supply voltage range (−1 to 618 V), dead time programmability via external resistor (0.4–3.1 µs), UVLO thresholds (12 V turn-on / 10 V turn-off), CMOS/TTL Schmitt-trigger inputs, and SO8 package thermal resistance (150 °C/W).
Technical Context
The L6384D013TR implements a BCD "OFF-LINE" process-based half-bridge architecture with matched propagation delays between high-side and low-side drivers to support stable high-frequency operation up to 400 kHz. Its internal bootstrap driver replaces an external fast-recovery diode using a synchronized DMOS switch and series diode, reducing leakage and board space.
Dead time is set by a high-impedance pin (DT/SD) sourcing 28 µA, enabling precise adjustment via resistor (47–270 kΩ) or voltage bias. The device integrates undervoltage lockout with 2 V hysteresis, logic-level compatible inputs (VIL ≤ 1.5 V, VIH ≥ 3.6 V), and clamping on VCC (15.6 V typ.) to protect against overvoltage transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Output Voltage | −3 to 580 V (enables direct driving of 600 V-class MOSFETs/IGBTs) |
| Bootstrap Supply Range | VBOOT = −1 to 618 V (supports floating high-side operation up to 600 V rail) |
| Output Drive Strength | 400 mA source / 650 mA sink (ensures fast turn-on/turn-off of high-gate-charge devices) |
| Switching Speed | 70 ns rise / 30 ns fall (CL = 1 nF; enables >400 kHz PWM without excessive switching loss) |
| UVLO Thresholds | 12.0 V turn-on / 10.0 V turn-off (2 V hysteresis prevents oscillation during brownout) |
| dV/dt Immunity | ±50 V/ns (guaranteed over full temperature range; suppresses false triggering in noisy HV environments) |
| Dead Time Range | 0.4–3.1 µs (set externally via RDT; avoids shoot-through in bridge topologies) |
Pinout & Package
The L6384D013TR is housed in an SO8 (Small Outline 8-pin) package with 150 °C/W junction-to-ambient thermal resistance and standard 1.27 mm pitch. Pin 1 is IN (logic input), Pin 2 is VCC, Pin 3 is DT/SD (dead time/shutdown), Pin 4 is GND, Pin 5 is LVG (low-side gate output), Pin 6 is VOUT (floating reference), Pin 7 is HVG (high-side gate output), and Pin 8 is VBOOT (bootstrap supply).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 IN | Logic Input | In-phase with HVG, inverted relative to LVG; CMOS/TTL compatible (VIL ≤ 1.5 V, VIH ≥ 3.6 V) |
| 2 VCC | Supply Input | Clamped at 15.6 V (typ.); must not be driven by low-impedance source due to internal Zener |
| 3 DT/SD | High-Z Control | Shut down if < 0.5 V; sets dead time via 28 µA current and external resistor (47–270 kΩ) |
| 4 GND | Reference Ground | Common return for low-side circuitry and logic section |
| 5 LVG | Low-Side Gate Driver | 400 mA source / 650 mA sink; 0.3 V max drop @ 10 mA sink ensures gate hold-down without bleeder resistor |
| 6 VOUT | Floating Reference | Connects to source of high-side MOSFET; layout-critical node for dV/dt noise immunity |
| 7 HVG | High-Side Gate Driver | 400 mA source / 650 mA sink; referenced to VOUT; 0.3 V max drop vs. VOUT @ 10 mA sink |
| 8 VBOOT | Bootstrap Supply | Charged via integrated DMOS+diode structure; eliminates need for external bootstrap diode |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Bootstrap Driver | Replaces external fast-recovery diode with low-leakage DMOS+diode structure, reducing component count and improving reliability |
| Matched Propagation Delays | Typical tON/tOFF variation < 50 ns between HVG and LVG, enabling clean high-frequency bridge switching |
| Programmable Dead Time | 0.4–3.1 µs range set by single external resistor (no additional ICs or timing capacitors required) |
| Robust Logic Interface | Schmitt-trigger inputs with hysteresis and internal pull-down eliminate need for external debouncing or level-shifting |
| Full-Temperature dV/dt Immunity | ±50 V/ns guaranteed from −45°C to +125°C, preventing false triggering in industrial HV environments |
Applications
| Motor Drive Inverters | Industrial SMPS |
|---|---|
Use Scenario: Three-phase BLDC or PMSM motor control in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Half-bridge gate driver delivering synchronized, shoot-through-protected gate signals to six N-channel MOSFETs in inverter leg configuration. Use Value: Integrated dead time setting and 600 V rail tolerance enable compact, reliable inverter designs operating directly from 400 V DC bus. | Use Scenario: High-efficiency AC-DC power supplies for telecom and server PSUs. IC Role / Device Role / Timing Role: Driving high-side/low-side MOSFETs in active clamp forward or LLC resonant converter half-bridges. Use Value: 400 mA/650 mA drive strength and 50/30 ns switching speed reduce conduction and switching losses at 200–400 kHz operation. |
| Induction Heating Systems | UPS Inverter Stages |
Use Scenario: Resonant tank drivers in domestic and commercial induction cooktops. IC Role / Device Role / Timing Role: Controlling parallel-connected IGBTs in full-bridge topology with precise dead time to prevent cross-conduction. Use Value: ±50 V/ns dV/dt immunity ensures stable operation despite high di/dt-induced noise in resonant circuits. | Use Scenario: Bidirectional DC-AC conversion in online UPS systems with battery backup. IC Role / Device Role / Timing Role: Gate-driving high-voltage MOSFETs in H-bridge inverter stage handling 380–400 V DC input. Use Value: Internal VCC clamping and UVLO with hysteresis provide robust startup and brownout recovery under variable grid conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2104STRPBF | Lower max VBS (600 V vs. 618 V); no integrated bootstrap driver; requires external diode | Less suitable for space-constrained designs; higher BOM cost due to added diode and capacitor | Choose when legacy IR21xx design reuse is prioritized and bootstrap diode integration is not required |
| UCC27211DR | Higher drive current (4 A source/sink); no integrated dead time control; no bootstrap driver; 120 V max VBS | Requires external dead time generator and level shifter; limited to lower-voltage bridges (< 200 V) | Prefer for high-speed, high-current low-voltage half-bridges where integrated HV features are unnecessary |
Compared with IR2104STRPBF and UCC27211DR, the L6384D013TR uniquely combines 600 V rail tolerance, programmable dead time, and integrated bootstrap driver in SO8 - eliminating three external components while maintaining full industrial temperature operation and dV/dt immunity.
Availability
L6384D013TR is available at Aetrix Electronics and suitable for motor drive inverters, industrial SMPS, and induction heating systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for L6384D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.
The L6384 series belongs to ST's high-voltage gate driver product line, engineered specifically for rugged industrial and appliance applications demanding reliable half-bridge control at up to 600 V with minimal external components.
FAQ
What is the maximum allowable bootstrap capacitor voltage drop for reliable L6384D013TR operation?
The bootstrap capacitor voltage drop must remain below the minimum VBOOT − VOUT requirement of 17 V (per recommended operating conditions). With typical VBOOT = 17 V above VOUT, a drop exceeding ~1.5 V risks insufficient high-side gate drive, especially under high gate charge loads or elevated temperatures. Designers should size CBOOT ≥ 10× CGATE and verify charging time exceeds 5 µs at minimum duty cycle.
Can the DT/SD pin be left unconnected or tied directly to VCC?
No - the DT/SD pin must never be left floating or pulled directly to VCC through low impedance. Its 28 µA internal current source requires either a resistor to ground (47–270 kΩ) or a controlled voltage bias (0.5–2.7 V). Floating or stiff VCC connection causes undefined dead time or unintended shutdown due to noise sensitivity and internal current-source loading.
Does the integrated bootstrap driver require special PCB layout considerations?
Yes - the bootstrap driver's synchronous DMOS switch demands tight coupling between LVG and VBOOT/VOUT nodes. Layout must minimize loop inductance: place CBOOT adjacent to pins 6 and 8, use short wide traces, avoid vias in the bootstrap path, and isolate VOUT from noisy ground returns to preserve dV/dt immunity and prevent premature DMOS turn-on.
How does the L6384D013TR handle undervoltage conditions on VCC?
The device incorporates a precision UVLO with 12.0 V turn-on and 10.0 V turn-off thresholds (2 V hysteresis). When VCC falls below 10.0 V, both HVG and LVG outputs are forced low, disabling the bridge. Recovery only occurs after VCC rises above 12.0 V, preventing erratic switching during brownouts and ensuring safe restart behavior in power supply applications.
L6384D013TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 14.6V ~ 16.6V
- Logic Voltage - VIL, VIH:
- 1.5V, 3.6V
- Current - Peak Output (Source, Sink):
- 400mA, 650mA
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 50ns, 30ns
- Operating Temperature:
- -45°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
L6384D013TR FAQ
1.How can I place an order for L6384D013TR through Aetrix?
Please submit a Request for Quotation (RFQ) for L6384D013TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for L6384D013TR reliable?
The price and inventory of L6384D013TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6384D013TR is usually 5 days.
3.What payment methods are accepted for L6384D013TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6384D013TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for L6384D013TR?
L6384D013TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your L6384D013TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for L6384D013TR?
For technical support, including L6384D013TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6384D013TR requirements.
6.How does Aetrix verify that L6384D013TR is sourced from the original manufacturer or authorized distributors?
All L6384D013TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6384D013TR meets industry standards.
7.What is the process for return or replacement of L6384D013TR?
All L6384D013TR units undergo pre-shipment inspection (PSI). If there is an issue with L6384D013TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The L6384D013TR part is unused and in its original packaging.
Return procedure for L6384D013TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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