STMicroelectronics L6384E

Overview

L6384E from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs or IGBTs in switching topologies. It supports up to 600 V rail voltage, delivers 400 mA source / 650 mA sink output current, achieves 50/30 ns rise/fall times with 1 nF load, features integrated bootstrap diode and undervoltage lockout, and is used in induction heating inverters and HVAC motor drives.

For engineers reviewing the L6384E datasheet, L6384E pinout, L6384E application, or L6384E equivalent, this page provides verified technical context, package mapping, timing behavior under dV/dt stress, deadtime configuration via external resistor, and real-world design implications of its integrated bootstrap driver and CMOS/TTL-compatible inputs.

Technical Context

The L6384E implements a single-input, non-overlapping half-bridge driver architecture with matched propagation delays between high-side (HVG) and low-side (LVG) outputs, enabling stable high-frequency operation up to 400 kHz. Its floating high-side section operates referenced to VOUT, with dV/dt immunity of ±50 V/ns across –45 °C to +125 °C.

Deadtime is user-configurable via an external resistor on the DT/SD pin (0.4–3.1 µs range), while shutdown functionality is activated when DT/SD voltage drops below 0.5 V. The internal 15.6 V VCC clamp and UVLO thresholds (12.0 V turn-on, 10.0 V turn-off) ensure robust supply regulation during slow ramp-up or transient sags.

Key Specifications

Pinout & Package

Available in DIP-8 and SO-8 packages per ECOPACK® environmental compliance. Both variants share identical pinout and functional assignment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104S and UCC27211D, the L6384E uniquely combines 600 V capability, integrated bootstrap diode, programmable deadtime, and internal VCC clamp-making it optimal for cost-sensitive, space-constrained 400 VAC-fed inverter designs where reliability and component count reduction are prioritized.

Availability

L6384E is available at Aetrix Electronics and suitable for induction heating systems, HVAC compressor drives, and industrial motor controllers requiring stable component supply across long-lifecycle manufacturing programs.

Supply support for L6384E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering automotive, industrial, and power management solutions with emphasis on energy efficiency and system integration.

The L6384E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, integrated half-bridge control in mains-connected appliances and industrial motor drives operating up to 600 V.

FAQ

What is the purpose of the DT/SD pin on the L6384E?

The DT/SD pin serves dual functions: applying voltage below 0.5 V shuts down both outputs, while applying a higher voltage-via resistor-to-ground-sets deadtime between HVG and LVG. The internal 28 µA current source enables resistor-based tuning from 0.4 to 3.1 µs, eliminating need for external timing components.

Can the L6384E drive IGBTs directly without external components?

Yes-the L6384E delivers 650 mA sink and 400 mA source current, sufficient to drive standard 15–30 A IGBTs with gate charge ≤30 nC at 100 kHz. Its integrated bootstrap diode, VCC clamp, and matched delays eliminate typical external components like Zeners, bleeder resistors, and discrete deadtime generators.

How does the integrated bootstrap driver differ from a conventional external diode?

The L6384E uses a patented internal DMOS+diode structure driven synchronously with LVG, replacing the external fast-recovery diode. This reduces leakage current, improves reliability, and eliminates diode reverse recovery losses-but requires VOUT near GND during LVG conduction to charge CBOOT, with ~125 Ω R_DS(on) causing predictable voltage drop.

What thermal considerations apply to the L6384E in SO-8 versus DIP-8 packages?

The SO-8 package has 150 °C/W junction-to-ambient thermal resistance, while DIP-8 is 100 °C/W. For 750 mW dissipation at 125 °C ambient, SO-8 reaches ~237 °C junction temperature-exceeding 150 °C limit-so SO-8 requires copper pour and thermal vias; DIP-8 is inherently more robust for high-power continuous operation without heatsinking.