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STMicroelectronics L6384ED

Part No.:
L6384ED
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixL6384ED.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,692

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Product details

Overview

L6384ED from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs or IGBTs in switching topologies. It features 600 V high-side rail capability, ±50 V/ns dV/dt immunity, 400 mA source / 650 mA sink output drive, 50/30 ns rise/fall times (1 nF load), and integrated bootstrap diode - enabling compact motor drive and induction heating inverters.

For engineers reviewing the L6384ED datasheet, L6384ED pinout, L6384ED application, or L6384ED equivalent, key selection criteria include deadtime programmability via external resistor, CMOS/TTL Schmitt-trigger inputs with hysteresis, undervoltage lockout (12 V turn-on / 10 V turn-off), internal VCC clamp (~15.6 V), and dual DIP-8/SO-8 package support.

Technical Context

The L6384ED implements a single-input, non-overlap half-bridge driver architecture with matched propagation delays between high-side (HVG) and low-side (LVG) outputs. Its floating high-side section operates up to 600 V referenced to VOUT, while logic-level inputs (VIL ≤ 1.5 V, VIH ≥ 3.6 V) interface directly with microcontrollers or PWM controllers.

Deadtime is set externally via resistor (RDT) on the DT/SD pin, yielding tunable delay range of 0.4–3.1 µs; shutdown is activated when DT/SD voltage drops below 0.5 V. The integrated bootstrap driver replaces external fast-recovery diodes using a patented DMOS+diode structure with 125 Ω typical RDS(on), reducing leakage and board area.

Key Specifications

Parameter Value and Actual Design Meaning
High-side voltage rating 600 V max - supports direct connection to 400 VAC rectified bus without level-shifting circuitry
dV/dt immunity ±50 V/ns - prevents false triggering during fast-switching transients in noisy industrial environments
Output drive strength 400 mA source / 650 mA sink - ensures rapid MOSFET/IGBT turn-on/off with <100 ns propagation delay variation
Switching speed (CL = 1 nF) 50 ns rise / 30 ns fall - enables reliable operation at up to 400 kHz switching frequency
VCC clamping voltage 15.6 V typical - protects internal circuitry from overvoltage during startup or transient surges
UVLO thresholds 12.0 V turn-on / 10.0 V turn-off - provides clean power-up sequencing and brownout protection
Deadtime range 0.4–3.1 µs - configurable via external resistor to prevent shoot-through in half-bridge power stages

Pinout & Package

Available in SO-8 surface-mount package (JEDEC MS-012AC, 5.0 × 6.2 mm body, 1.27 mm pitch) with standard thermal pad layout for industrial-grade PCB assembly.

Pin/Terminal Circuit Role Design Meaning
1 IN Logic input In-phase with HVG, inverted relative to LVG; CMOS/TTL compatible with hysteresis (VIL ≤ 1.5 V, VIH ≥ 3.6 V)
2 VCC Low-side supply Internally clamped at ~15.6 V; powers low-side driver and logic; UVLO active below 10 V
3 DT/SD Deadtime/shutdown control High-impedance pin: <0.5 V triggers shutdown; resistor-to-ground sets deadtime (0.4–3.1 µs)
4 GND Power ground Reference for low-side driver and logic; must be low-inductance connection to minimize noise coupling
5 LVG Low-side gate output Drives N-channel MOSFET/IGBT gate; 400 mA source / 650 mA sink; 0.3 V max. saturation voltage
6 VOUT Floating reference High-side output return node; must be routed with minimal loop area to suppress ground bounce
7 HVG High-side gate output Drives high-side switch gate; same current capability as LVG; referenced to VOUT not GND
8 VBOOT Bootstrap supply Charged via integrated DMOS driver; supplies high-side section; requires external CBOOT capacitor

Key Features

Feature Design Value
Integrated bootstrap diode Replaces external fast-recovery diode; reduces leakage, board space, and BOM count
Matched propagation delays Ensures symmetrical timing between HVG and LVG outputs - critical for minimizing cross-conduction risk
Programmable deadtime Resistor-tuned (47–270 kΩ) deadtime eliminates need for external timing ICs or complex gate-delay networks
CMOS/TTL Schmitt inputs Hysteresis improves noise immunity on control lines; pull-down ensures defined state during MCU reset
VCC voltage clamp 15.6 V Zener-like clamp prevents overvoltage damage during slow-ramp or surge conditions

Applications

Induction Heating Inverter Brushless DC Motor Drive

Use Scenario: High-frequency resonant inverter driving series-LC tank at 20–100 kHz for cooktop or industrial heating.

IC Role / Device Role / Timing Role: Half-bridge gate driver controlling two 600 V IGBTs; delivers precise deadtime to prevent shoot-through during zero-voltage switching transitions.

Use Value: Integrated bootstrap driver eliminates external diode failure mode; ±50 V/ns dV/dt immunity maintains reliability amid EMI-rich coil switching noise.

Use Scenario: 3-phase BLDC inverter for HVAC fan or appliance motor, operating at 15–30 kHz PWM.

IC Role / Device Role / Timing Role: Single-input half-bridge driver per phase leg; matched HVG/LVG delays ensure consistent commutation timing across all three legs.

Use Value: 400 mA/650 mA drive strength enables fast gate charging of 10–50 nC MOSFETs; UVLO prevents erratic startup during line-voltage dips.

Industrial HVAC Compressor Drive Factory Automation AC Motor Inverter

Use Scenario: Variable-speed compressor drive in commercial HVAC systems, requiring robust operation across -40°C to +125°C ambient.

IC Role / Device Role / Timing Role: High-voltage gate driver interfacing with DSP-based PWM controller; DT/SD pin used for hardware fault shutdown during overcurrent events.

Use Value: 600 V rail rating supports direct connection to 380 VAC rectified bus; SO-8 package offers superior thermal performance vs. DIP-8 in enclosed enclosures.

Use Scenario: Compact 3 kW AC induction motor inverter for robotic axis control, mounted on DIN-rail enclosure with limited airflow.

IC Role / Device Role / Timing Role: Half-bridge stage driver in 2-level inverter topology; internal VCC clamp stabilizes logic supply during regenerative braking voltage spikes.

Use Value: 50/30 ns switching times enable efficient 20 kHz carrier frequency; integrated bootstrap reduces component count and improves long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2104S No integrated bootstrap diode; requires external HV fast-recovery diode; lower dV/dt immunity (±25 V/ns); 200 mA/340 mA drive Suitable for cost-sensitive, lower-power (<500 W) applications where board space is less constrained Select if legacy design uses IR21xx footprint and external diode is acceptable; avoid for high-noise or miniaturized designs
UCC27211D Higher drive (4 A source/sink); no integrated bootstrap; separate high/low inputs; no deadtime programming; 120 V max. VBS Targeted at high-frequency GaN/SiC half-bridges up to 2 MHz; requires external bootstrap and deadtime IC Choose only for >100 kHz SiC/GaN designs needing ultra-fast drive; not drop-in for 600 V IGBT/MOSFET applications

Compared with IR2104S and UCC27211D, the L6384ED uniquely combines 600 V capability, integrated bootstrap, programmable deadtime, and industrial-grade dV/dt immunity - making it optimal for mid-power (500 W–5 kW) induction, motor, and lighting inverters where reliability and component count matter.

Availability

L6384ED is available at Aetrix Electronics and suitable for induction heating inverters, BLDC motor drives, and HVAC compressor controls requiring stable component supply across extended product lifecycles.

Supply support for L6384ED includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6384ED belongs to ST's high-voltage gate driver product line, engineered specifically for robust half-bridge control in energy-efficient power conversion systems - emphasizing integration, noise immunity, and long-term manufacturability.

FAQ

What is the maximum recommended switching frequency for the L6384ED?

The L6384ED is characterized for reliable operation up to 400 kHz with a 1 nF capacitive load, as confirmed by rise/fall time (50/30 ns) and propagation delay (200–300 ns) data. At higher frequencies, thermal limits and bootstrap capacitor recharge time become limiting factors - especially above 250 kHz in continuous conduction mode. Derating is advised for sustained >300 kHz operation in thermally constrained layouts.

Can the L6384ED drive both MOSFETs and IGBTs?

Yes - the L6384ED is explicitly qualified to drive both N-channel power MOSFETs and IGBTs in half-bridge configurations. Its 400 mA source / 650 mA sink capability meets gate charge requirements for devices up to ~50 nC, and its 600 V high-side rating supports common 600 V-class switches. The integrated bootstrap driver is optimized for MOSFET gate drive but functions reliably with IGBTs when VGE thresholds and Miller plateau characteristics are within specification.

How is deadtime configured on the DT/SD pin?

Deadtime is set by connecting a resistor (RDT) between pin 3 (DT/SD) and GND. Values from 47 kΩ to 270 kΩ yield deadtimes of 0.4–3.1 µs, respectively, based on a fixed 28 µA internal current source (IREF). The pin must never float - stray capacitance or noise can cause unintended shutdown. Layout best practice mandates short, direct routing with minimal trace length and no nearby noisy signals.

Does the L6384ED require an external bootstrap diode?

No - the L6384ED integrates a patented bootstrap driver consisting of a high-voltage DMOS transistor and series diode, eliminating the need for an external fast-recovery diode. This reduces leakage current, PCB area, and potential failure points. However, if bootstrap recharge time is insufficient (e.g., very low duty cycle or high frequency), an external diode may be added in parallel to supplement charging - though this is rarely necessary in properly designed 50–200 kHz applications.

L6384ED Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
14.6V ~ 16.6V
Logic Voltage - VIL, VIH:
1.5V, 3.6V
Current - Peak Output (Source, Sink):
400mA, 650mA
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
50ns, 30ns
Operating Temperature:
-45°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

L6384ED FAQ

1.How can I place an order for L6384ED through Aetrix?

Please submit a Request for Quotation (RFQ) for L6384ED on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for L6384ED reliable?

The price and inventory of L6384ED are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6384ED is usually 5 days.

3.What payment methods are accepted for L6384ED?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6384ED transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for L6384ED?

L6384ED orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your L6384ED order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for L6384ED?

For technical support, including L6384ED datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6384ED requirements.

6.How does Aetrix verify that L6384ED is sourced from the original manufacturer or authorized distributors?

All L6384ED products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6384ED meets industry standards.

7.What is the process for return or replacement of L6384ED?

All L6384ED units undergo pre-shipment inspection (PSI). If there is an issue with L6384ED, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The L6384ED part is unused and in its original packaging.

Return procedure for L6384ED:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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