STMicroelectronics L6384ED013TR

Overview

L6384ED013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs or IGBTs in switching topologies. It features 600 V high-side rail capability, ±50 V/ns dV/dt immunity, 400 mA source / 650 mA sink output drive, 50/30 ns rise/fall times (1 nF load), and integrated bootstrap diode - enabling compact, robust motor and power supply designs for induction heating and HVAC systems.

For engineers reviewing the L6384ED013TR datasheet, L6384ED013TR pinout, L6384ED013TR application, or L6384ED013TR equivalent, this page delivers verified technical context, SO-8 package details, deadtime configuration guidance, UVLO thresholds, and real-world use cases for industrial half-bridge gate driving.

Technical Context

The L6384ED013TR implements a single-input, matched-delay architecture with independent high-side (HVG) and low-side (LVG) drivers referenced to floating VOUT and grounded GND respectively. Its patented bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS + series diode structure, with 125 Ω typical R_DS(on) and 17 V bootstrap voltage capability.

Deadtime is user-configurable via resistor (R_DT) on DT/SD pin (0.4–3.1 µs range), while shutdown is triggered by pulling DT/SD below 0.5 V. Logic inputs are CMOS/TTL-compatible with 1.5 V/3.6 V thresholds, and internal VCC clamping at 15.6 V ensures stable operation during slow-ramp or droop conditions.

Key Specifications

Pinout & Package

Available in SO-8 package (ECOPACK® compliant, RoHS-compliant, 1.27 mm pitch). Body dimensions: 4.90 × 6.00 × 1.75 mm (D × E × A). Thermal resistance R_th(JA) = 150 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2104S and UCC27211D, the L6384ED013TR uniquely combines integrated bootstrap functionality, programmable deadtime, and ±50 V/ns noise immunity in an SO-8 package - reducing system-level component count and improving reliability in cost-sensitive industrial inverters.

Availability

L6384ED013TR is available at Aetrix Electronics and suitable for induction cooking systems, HVAC inverter drives, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for L6384ED013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative solutions across automotive, industrial, power, and embedded markets since 1987.

The L6384E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, space-efficient half-bridge control in AC-DC and DC-AC power conversion systems operating up to 600 V.

FAQ

What is the maximum recommended switching frequency for L6384ED013TR?

The datasheet specifies 400 kHz as the maximum switching frequency with 1 nF capacitive load. This limit arises from propagation delay matching (≤300 ns), rise/fall time (50/30 ns), and thermal dissipation constraints (750 mW at T_J = 85°C). For reliable operation above 200 kHz, layout must minimize parasitic inductance on VBOOT, VOUT, and GND paths.

Can L6384ED013TR drive IGBTs directly without external components?

Yes - the L6384ED013TR can directly drive standard 600 V IGBTs with gate charge ≤30 nC, thanks to its 650 mA sink/400 mA source capability and 0.3 V saturation voltage. No external gate resistors are required for basic operation, though a small series resistor (5–10 Ω) is recommended for EMI suppression and ringing control in high-dI/dt applications.

How does the integrated bootstrap driver affect CBOOT selection?

The internal bootstrap DMOS (R_DS(on) = 125 Ω) introduces voltage drop during capacitor recharge: V_drop ≈ (Q_gate/t_charge) × 125 Ω. For a 30 nC IGBT at 5 µs charge time, drop is ~0.8 V. Therefore, CBOOT must be sized to maintain ≥12 V on VBOOT after this drop - e.g., 100 nF for 3 nF equivalent gate capacitance ensures <300 mV total droop.

Is L6384ED013TR pin-compatible with earlier L6384E variants?

Yes - L6384ED013TR shares identical pinout, electrical characteristics, and functional behavior with all L6384E family members (including DIP-8 and SO-8 tube versions). The "013TR" suffix denotes tape-and-reel packaging in SO-8; no functional or timing differences exist versus L6384ED or L6384E.