STMicroelectronics L6385

Overview

L6385 from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive N-channel power MOSFETs or IGBTs in half-bridge configurations. It features 600 V floating rail capability, ±50 V/ns dV/dt immunity across −45°C to +125°C, 400 mA source / 650 mA sink output current, 50 ns rise / 30 ns fall times (1 nF load), and integrated bootstrap diode - enabling compact, robust motor control and SMPS designs.

For engineers reviewing the L6385 datasheet, L6385 pinout, L6385 application, or L6385 equivalent, key selection criteria include its dual independent driver architecture, UVLO on both high- and low-side sections, CMOS/TTL Schmitt-trigger inputs with hysteresis, internal bootstrap DMOS (R_DS(on) = 125 Ω), and SO-8 Minidip packaging for industrial switching applications.

Technical Context

The L6385 implements a split-driver topology with isolated high-side (floating) and low-side (ground-referenced) output stages, each controlled by dedicated logic inputs (HIN/LIN). Its patented internal bootstrap driver replaces external fast-recovery diodes using a synchronously gated high-voltage DMOS and series diode, reducing leakage and board area.

UVLO protection operates independently on V_CC (9.1–10.1 V turn-on, 7.9–8.8 V turn-off) and V_BOOT (8.5–10.5 V turn-on, 7.2–9.2 V turn-off), ensuring safe operation during supply transients. Propagation delays are tightly specified: t_ON ≤ 110 ns, t_OFF ≤ 105 ns at V_OUT = 0 V / 600 V respectively, supporting up to 400 kHz switching frequency with 1 nF load.

Key Specifications

Pinout & Package

The L6385 is housed in an SO-8 Minidip package (body size 5.0 mm × 4.0 mm, lead pitch 1.27 mm), optimized for thermal dissipation (R_{th j-amb} = 100 °C/W) and PCB layout simplicity in high-voltage gate drive circuits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110 and UCC27324, the L6385 uniquely integrates a bootstrap DMOS to eliminate external diode leakage, supports true 600 V floating operation with dual UVLO, and delivers tighter timing specs - making it optimal for space-constrained, high-reliability half-bridge systems where board area and transient immunity are critical.

Availability

L6385 is available at Aetrix Electronics and suitable for motor control inverters, industrial switch-mode power supplies, induction heating systems, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for L6385 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6385 belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact half-bridge control in AC-DC, DC-AC, and motor drive applications demanding high dV/dt immunity and integrated bootstrap functionality.

FAQ

What is the maximum allowable V_BOOT – V_OUT differential voltage?

The L6385 specifies a recommended operating condition of V_BOOT – V_OUT ≤ 17 V. Exceeding this causes V_OUT to be clamped at V_BOOT – 18 V per absolute maximum ratings. This limit ensures safe biasing of the internal high-side driver stage and prevents overstress of the bootstrap DMOS structure.

Can the L6385 drive SiC MOSFETs?

Yes, but with design constraints: its 400 mA source / 650 mA sink current and 50/30 ns switching times suit low-to-mid-power SiC devices (e.g., <1200 V, Q_g < 25 nC). Gate resistor selection must account for the 125 Ω internal bootstrap DMOS R_DS(on), and layout must minimize parasitic inductance to preserve dV/dt immunity.

Why does the L6385 omit a dedicated shutdown pin?

The L6385 uses logic-level disable via HIN/LIN inputs: holding both inputs low disables both outputs. This eliminates need for extra pins while maintaining fail-safe behavior - if controller fails high, both drivers remain off due to Schmitt-trigger hysteresis and UVLO monitoring of V_CC/V_BOOT.

Is the SO-8 Minidip package RoHS-compliant?

Yes - STMicroelectronics confirms RoHS compliance for all L6385 variants (including L6385D and L6385) per EU Directive 2011/65/EU. The SO-8 Minidip package uses lead-free matte tin plating and halogen-free molding compound, with full material declarations available in ST's official product change notifications.