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STMicroelectronics L6385D

Part No.:
L6385D
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixL6385D.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,724

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Product details

Overview

L6385D from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive N-channel power MOSFETs or IGBTs in half-bridge topologies. It features 600 V rail capability, ±50 V/ns dV/dt immunity across −45°C to +125°C, 400 mA source / 650 mA sink output current, 50 ns rise / 30 ns fall times (1 nF load), and integrated bootstrap diode functionality. It is used in industrial motor drives and SMPS where high-side floating operation and robust noise immunity are required.

For engineers reviewing the L6385D datasheet, L6385D pinout, L6385D application, or L6385D equivalent, key selection criteria include bootstrap driver Rdson (125 Ω), UVLO thresholds for Vcc (9.1–10.1 V turn-on) and Vboot (8.5–10.5 V turn-on), propagation delays (110/105 ns), and SO-8 Minidip thermal resistance (150 °C/W).

Technical Context

The L6385D implements a BCD "Off-Line" process-based architecture with separate low-side (ground-referenced) and high-side (floating) driver sections. Its patented internal bootstrap driver replaces external fast-recovery diodes using a synchronously switched high-voltage DMOS and series diode, reducing leakage and board space.

Logic inputs accept CMOS/TTL levels with Schmitt-trigger hysteresis and internal pull-down; both driver outputs (HVG, LVG) are non-inverting. UVLO protection operates independently on Vcc and Vboot rails, with 1.3 V hysteresis and temperature-stable thresholds verified from −45°C to +125°C.

Key Specifications

ParameterValue and Actual Design Meaning
Max Rail Voltage600 V - supports high-voltage half-bridge operation up to mains-referenced 400 VAC systems
dV/dt Immunity±50 V/ns - ensures reliable switching under fast transient noise in motor drive and inverter environments
Output Current400 mA source / 650 mA sink - sufficient to charge/discharge typical 1–3 nF gate capacitances within <100 ns
Rise/Fall Time50 ns / 30 ns (CL = 1 nF) - enables >400 kHz PWM operation with minimal dead-time overhead
Bootstrap Rdson125 Ω (typ.) - determines voltage drop during Cboot recharge; e.g., 0.8 V drop for 30 nC gate charge & 5 µs charging time
Vcc UVLO Threshold9.1–10.1 V turn-on - prevents erratic operation during brown-out conditions in industrial power supplies
Vboot UVLO Threshold8.5–10.5 V turn-on - safeguards high-side gate drive integrity when bootstrap capacitor voltage sags

Pinout & Package

Package: SO-8 Minidip (surface-mount), 150 °C/W junction-to-ambient thermal resistance, 8-pin layout with exposed pad not specified.

Pin/TerminalCircuit RoleDesign Meaning
1 LINLow-side logic inputInverted logic-compatible signal controlling LVG output; internal pull-down holds low during power-up
2 HINHigh-side logic inputCMOS/TTL input driving HVG; synchronized with LVG for complementary half-bridge control
3 VccLow-voltage supply15 V nominal supply for logic and low-side driver; UVLO active below 7.9 V
4 GNDGround referenceCommon return for low-side circuitry and logic; isolated from high-side floating domain
5 LVGLow-side gate driver outputGround-referenced output sourcing 400 mA/sinking 650 mA; drives N-MOS source terminal
6 VOUTFloating reference nodeConnects to switch node between external high-side MOS and load; defines HVG's local ground
7 HVGHigh-side gate driver outputFloating output referenced to VOUT; drives N-MOS gate with 600 V common-mode tolerance
8 VbootBootstrap supply inputCharged via internal DMOS-diode path during LVG ON; supplies HVG section when VOUT rises

Key Features

FeatureDesign Value
Integrated Bootstrap DiodeReplaces external fast-recovery diode; reduces leakage, PCB area, and BOM count in half-bridge designs
Independent UVLODual undervoltage lockout on Vcc and Vboot rails ensures safe disable of both driver sections under supply fault
High dV/dt Immunity±50 V/ns over full temperature range prevents false triggering in noisy high-power switching nodes
Non-Inverting OutputsHVG and LVG follow HIN/LIN logic states directly-no external inversion needed for standard half-bridge control
Temperature-Stable TimingPropagation delay (110/105 ns) and rise/fall times vary <15% from −45°C to +125°C

Applications

Industrial Motor DrivesSwitch-Mode Power Supplies

Use Scenario: Three-phase inverter stage driving 400 VAC PMSM motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Half-bridge gate driver providing synchronized, high-noise-immunity control of upper/lower N-MOSFETs per phase leg.

Use Value: 600 V rail rating and ±50 V/ns dV/dt immunity prevent shoot-through and false turn-on during rapid bus transients.

Use Scenario: Isolated DC-DC converter with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: High-side gate driver enabling synchronous rectification or high-frequency half-bridge switching at >200 kHz.

Use Value: 50 ns rise time and 125 Ω bootstrap Rdson support efficient gate charging while minimizing conduction loss in bootstrap path.

Uninterruptible Power SuppliesInduction Heating Systems

Use Scenario: Online UPS inverter stage converting 380 VDC bus to 230 VAC output with bidirectional energy flow.

IC Role / Device Role / Timing Role: Dual-channel driver managing high-side/low-side switches in full-bridge configuration with precise dead-time control.

Use Value: Independent Vcc/Vboot UVLO prevents partial drive failure during AC line sag or battery voltage drop.

Use Scenario: Resonant inverter driving 20–100 kHz induction coils for cooktops and industrial heating.

IC Role / Device Role / Timing Role: High-speed gate driver ensuring zero-voltage switching (ZVS) by precisely timing MOSFET turn-on relative to resonant tank voltage zero-crossing.

Use Value: 30 ns fall time and 105 ns turn-off delay enable tight ZVS window control, reducing switching losses and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR2110PbFNo integrated bootstrap diode; requires external fast-recovery diode; higher Vbs UVLO hysteresis (2.5 V)Higher board area and leakage sensitivity; less suitable for compact, high-reliability SMPSSelect when legacy design reuse or cost-sensitive BOM without integrated diode is acceptable
UCC27211D600 V rating but no internal bootstrap; 4 A peak output; faster rise/fall (<10 ns); requires external bootstrap circuitBetter for high-frequency (>1 MHz) GaN or SiC drivers; lacks integrated bootstrap for simplified layoutSelect when driving wide-bandgap devices at >500 kHz and external bootstrap control is preferred

Compared with IR2110PbF and UCC27211D, the L6385D uniquely integrates the bootstrap diode and delivers balanced 400/650 mA drive strength in SO-8, making it optimal for cost- and space-constrained 400 V industrial inverters where reliability under dV/dt stress is critical.

Availability

L6385D is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term obsolescence management.

Supply support for L6385D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

The L6385D belongs to ST's high-voltage gate driver product line, engineered for robust half-bridge control in industrial power conversion where integration, noise immunity, and thermal resilience are essential.

FAQ

What is the purpose of the internal bootstrap diode in the L6385D?

The internal bootstrap diode replaces the external fast-recovery diode traditionally used to charge the bootstrap capacitor. It is implemented as a high-voltage DMOS with a series diode, driven synchronously with the low-side output (LVG). This reduces leakage current, saves PCB space, and improves reliability in high-temperature industrial environments.

Can the L6385D drive both N-channel and P-channel MOSFETs?

The L6385D is specifically designed to drive N-channel MOSFETs or IGBTs in high-side and low-side configurations. It does not support P-channel high-side drivers, as its high-side output (HVG) is a source-follower referenced to VOUT and requires an N-channel device with gate driven above the source potential.

How does the L6385D handle undervoltage conditions on Vcc and Vboot?

The L6385D features independent UVLO circuits for Vcc and Vboot. Vcc UVLO activates at 7.9–8.8 V (turn-off) and 9.1–10.1 V (turn-on); Vboot UVLO activates at 7.2–9.2 V (turn-off) and 8.5–10.5 V (turn-on), each with 1.3 V hysteresis. Both sections disable their respective outputs when their supply falls below threshold, preventing partial or unsafe drive.

What is the maximum recommended switching frequency for the L6385D?

The L6385D is characterized for reliable operation up to 400 kHz with a 1 nF load, based on its 50 ns rise and 30 ns fall times. At higher frequencies, bootstrap capacitor recharge time and internal Rdson-induced voltage drop must be carefully evaluated-especially when duty cycle limits charging window or gate charge exceeds 30 nF.

L6385D Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
17V (Max)
Logic Voltage - VIL, VIH:
1.5V, 3.6V
Current - Peak Output (Source, Sink):
400mA, 650mA
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
50ns, 30ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

L6385D FAQ

1.How can I place an order for L6385D through Aetrix?

Please submit a Request for Quotation (RFQ) for L6385D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for L6385D reliable?

The price and inventory of L6385D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6385D is usually 5 days.

3.What payment methods are accepted for L6385D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6385D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for L6385D?

L6385D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your L6385D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for L6385D?

For technical support, including L6385D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6385D requirements.

6.How does Aetrix verify that L6385D is sourced from the original manufacturer or authorized distributors?

All L6385D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6385D meets industry standards.

7.What is the process for return or replacement of L6385D?

All L6385D units undergo pre-shipment inspection (PSI). If there is an issue with L6385D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The L6385D part is unused and in its original packaging.

Return procedure for L6385D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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