STMicroelectronics L6385D013TR

Overview

L6385D013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive N-channel power MOSFETs or IGBTs in half-bridge configurations. It features 600 V rail capability, ±50 V/ns dV/dt immunity across −45 °C to +125 °C, 400 mA source / 650 mA sink output current, 50 ns rise / 30 ns fall times (1 nF load), and integrated bootstrap diode for high-side floating supply generation - used in industrial motor drives and SMPS inverters.

For engineers reviewing the L6385D013TR datasheet, L6385D013TR pinout, L6385D013TR application, or L6385D013TR equivalent, key selection criteria include bootstrap driver Rdson (125 Ω), UVLO thresholds (Vcc: 9.6 V turn-on / 8.3 V turn-off; Vboot: 9.5 V / 8.2 V), dV/dt robustness, and SO-8 package thermal resistance (100 °C/W).

Technical Context

The L6385D013TR implements a BCD "OFF-LINE" process-based architecture with separate low-side (LVG) and high-side (HVG) drivers referenced to GND and floating VOUT, respectively. Its internal bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS+diode structure, enabling self-charging when LVG is active and VOUT is near GND.

Logic inputs (HIN/LIN) are CMOS/TTL-compatible with Schmitt-trigger hysteresis and internal pull-down; both driver sections feature independent undervoltage lockout (UVLO) monitoring of Vcc and Vboot, with 1.3 V hysteresis and temperature-stable thresholds across full operating range.

Key Specifications

Pinout & Package

Package: SO-8 (Small Outline, 8-pin, surface-mount). Thermal resistance junction-to-ambient is 100 °C/W per datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211D, the L6385D013TR uniquely combines 600 V capability, integrated bootstrap diode, and dual UVLO in SO-8 - reducing design risk and footprint in cost-sensitive industrial inverters where external diode leakage must be minimized.

Availability

L6385D013TR is available at Aetrix Electronics and suitable for industrial motor drives, switched-mode power supplies, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for L6385D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6385 series belongs to ST's high-voltage gate driver product line, engineered specifically for robust, cost-effective half-bridge control in off-line power conversion and motor control applications.

FAQ

What is the maximum recommended switching frequency for L6385D013TR?

The datasheet specifies 400 kHz as the maximum recommended switching frequency with a 1 nF capacitive load. This limit arises from combined propagation delays (105–110 ns), rise/fall times (50/30 ns), and bootstrap recharge time constraints. At higher frequencies, insufficient Cboot recharge may cause Vboot sag and HVG dropout - especially above 50% duty cycle or with large Qg MOSFETs.

Can L6385D013TR drive IGBTs directly without external components?

Yes - the L6385D013TR can directly drive standard N-channel IGBTs with gate-emitter thresholds ≤5 V and total gate charge ≤50 nC. Its 400 mA source / 650 mA sink capability ensures adequate turn-on/turn-off speed. However, for high-current IGBTs (>50 A), external gate resistors are still required to control dv/dt and prevent oscillation.

How does the internal bootstrap driver affect minimum on-time for the high-side output?

The internal bootstrap driver's 125 Ω Rdson introduces a voltage drop proportional to gate charge and charging time: Vdrop = Qg × Rdson / Tcharge. For a 30 nC MOSFET and 5 µs charging window, Vdrop ≈ 0.8 V. To maintain ≥12 V effective Vboot, minimum HVG on-time must allow sufficient Tcharge - typically >2 µs at 100 kHz, limiting usable duty cycle to ~95% in continuous conduction mode.

Is L6385D013TR pin-compatible with earlier L6385 variants like L6385D?

Yes - L6385D013TR is a tape-and-reel variant of the L6385D in SO-8 package, sharing identical pinout, electrical specifications, and thermal characteristics. The "013TR" suffix denotes packaging format only (13-inch reel, 2500 pcs), not functional revision. No layout or schematic changes are required when substituting.