STMicroelectronics L6385E

Overview

L6385E from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs or IGBTs in asymmetrical topologies. It integrates high-side (up to 600 V rail) and low-side drivers with 400 mA source / 650 mA sink capability, 50/30 ns rise/fall times (1 nF load), CMOS/TTL Schmitt inputs, and internal bootstrap diode - used in induction heating, HVAC motor drives, and industrial power supplies.

For engineers reviewing the L6385E datasheet, L6385E pinout, L6385E application, or L6385E equivalent, key selection criteria include dV/dt immunity (±50 V/ns), dual UVLO (VCC & VBOOT), bootstrap driver R_DS(on) (125 Ω), thermal resistance (150 °C/W SO-8), and DIP-8/SO-8 package compatibility for layout flexibility.

Technical Context

The L6385E implements independent high-side and low-side drivers sharing logic-level inputs (HIN/LIN) with in-phase output response. Its floating high-side section uses bootstrap charging synchronized with LVG activation, enabling operation up to 600 V while maintaining ±50 V/ns dV/dt immunity across –45 °C to +125 °C.

UVLO protection operates separately on VCC (9.6 V turn-on, 8.3 V turn-off) and VBOOT (9.5 V turn-on, 8.2 V turn-off), each with 1.3 V hysteresis. The integrated bootstrap DMOS replaces external fast-recovery diodes, reducing leakage and board area - though voltage drop (V_drop ≈ Q_gate/T_charge × R_DS(on)) must be evaluated at high switching frequencies.

Key Specifications

Pinout & Package

The L6385E is available in both DIP-8 and SO-8 packages, with identical pinout configuration and footprint compatibility per JEDEC MS-012 and ECOPACK® standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110S and UCC27712DR, the L6385E offers unique integration of bootstrap diode and guaranteed dV/dt immunity - reducing external components and improving noise resilience in cost-sensitive 400 kHz industrial motor drives.

Availability

L6385E is available at Aetrix Electronics and suitable for induction heating systems, HVAC motor drives, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for L6385E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

The L6385E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact half-bridge control in cost-sensitive industrial power conversion systems - emphasizing integration, thermal efficiency, and noise immunity.

FAQ

What is the maximum recommended switching frequency for the L6385E?

The L6385E is characterized for reliable operation up to 400 kHz with a 1 nF load, as confirmed by rise/fall time (50/30 ns) and propagation delay (110/105 ns) data. At higher frequencies, bootstrap capacitor sizing and V_BOOT droop due to R_DS(on) (125 Ω) must be validated per Equation 2 in the datasheet to maintain sufficient gate drive voltage.

Does the L6385E require an external bootstrap diode?

No - the L6385E integrates a patented bootstrap driver using a high-voltage DMOS and series diode, eliminating the need for an external fast-recovery diode. This reduces component count, PCB area, and leakage-related inefficiencies, though designers must verify C_BOOT sizing and charging time (T_charge) for their specific MOSFET gate charge and duty cycle.

How does the dual UVLO protection function in practice?

The L6385E monitors VCC and VBOOT independently: VCC UVLO triggers at 9.6 V (turn-on) and 8.3 V (turn-off); VBOOT UVLO activates at 9.5 V (turn-on) and 8.2 V (turn-off), each with 1.3 V hysteresis. If either supply drops below its turn-off threshold, both outputs disable immediately - preventing partial drive that could cause shoot-through or device stress.

Can the L6385E drive both MOSFETs and IGBTs effectively?

Yes - the L6385E's 400 mA source / 650 mA sink capability, 50/30 ns switching speeds, and 600 V high-side rating make it suitable for driving medium-power N-channel MOSFETs (Q_g ≤ 30 nC) and IGBTs in hard-switched half-bridge configurations. Its dV/dt immunity and UVLO features further enhance reliability in inductive load applications like motor drives and induction heating.