STMicroelectronics L6385ED013TR

Overview

L6385ED013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs and IGBTs in asymmetrical topologies. It features independent high-side (up to 600 V rail) and low-side outputs, 400 mA source / 650 mA sink drive capability, 50/30 ns rise/fall times with 1 nF load, and integrated bootstrap diode for compact high-side supply. It is used in induction heating systems driving resonant half-bridge IGBTs.

For engineers reviewing the L6385ED013TR datasheet, L6385ED013TR pinout, L6385ED013TR application, or L6385ED013TR equivalent, key selection criteria include dV/dt immunity (±50 V/ns), dual UVLO (VCC and VBOOT), CMOS/TTL Schmitt inputs with hysteresis, and SO-8 package thermal resistance (150 °C/W).

Technical Context

The L6385ED013TR implements a floating high-side driver architecture using BCD™ "offline" process technology, enabling operation with VBOOT up to 618 V and VOUT down to −3 V. Its internal bootstrap driver replaces external fast-recovery diodes via a synchronously gated high-voltage DMOS with series diode and charge-pump control.

Both HIN/LIN inputs are CMOS/TTL compatible with defined Vil = 1.5 V and Vih = 3.6 V thresholds and hysteresis; undervoltage lockout activates at VCCth2 = 8.3 V (turn-off) and VBSth2 = 8.2 V (turn-off), with 1.3 V hysteresis on both rails to prevent oscillation during brownout conditions.

Key Specifications

Pinout & Package

Available in SO-8 package (ECOPACK® compliant), with 1.27 mm pitch, 5.0 mm × 6.0 mm body, and thermal resistance R_th(JA) = 150 °C/W. Pin 1 is LIN (low-side input); Pin 2 is HIN (high-side input); Pin 3 is VCC (low-side supply); Pin 4 is GND; Pin 5 is LVG (low-side output); Pin 6 is OUT (floating reference); Pin 7 is HVG (high-side output); Pin 8 is VBOOT (bootstrap supply).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF, L6385ED013TR reduces component count and improves noise immunity via integrated bootstrap and ±50 V/ns dV/dt tolerance; versus UCC27211D, it enables direct AC-line-connected high-side drive - a fundamental capability difference for mains-powered applications.

Availability

L6385ED013TR is available at Aetrix Electronics and suitable for induction heating systems, HVAC motor drives, and home appliance inverters requiring stable component supply across multi-year production cycles.

Supply support for L6385ED013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

The L6385E belongs to ST's high-voltage gate driver product line, engineered specifically for cost-sensitive, high-reliability AC-fed power conversion systems including induction cooking, motor control, and lighting ballasts.

FAQ

What is the maximum allowable VBOOT–VOUT differential voltage?

The L6385ED013TR specifies a recommended operating condition of V_BS = V_BOOT – V_OUT ≤ 17 V. Exceeding this value risks overstressing the internal high-side driver stage and may trigger premature UVLO or latch-up. The absolute maximum rating for V_BOOT is 618 V, but V_OUT must be maintained such that the differential stays within 17 V for reliable operation.

Can LIN and HIN be driven simultaneously high to enable asymmetrical half-bridge operation?

Yes - the L6385ED013TR allows simultaneous high states on LIN and HIN, resulting in both LVG and HVG going high. This enables asymmetrical topologies such as single-ended forward converters or burst-mode control where both switches conduct concurrently for controlled energy transfer, provided external circuitry prevents shoot-through.

Is an external bootstrap capacitor required, and what is the minimum recommended value?

Yes, an external C_BOOT is mandatory. ST recommends C_BOOT ≥ 100 nF for typical 30 nC gate charge MOSFETs at 400 kHz. Smaller values increase voltage droop; for example, 3 nF C_EXT (from Q_gate = 30 nC, V_gate = 10 V) with 100 nF C_BOOT yields ~300 mV drop per cycle. Leakage and long HVG ON time require larger values - e.g., 1 µF for 5 ms steady-state conduction.

Does the L6385ED013TR support 3.3 V logic inputs?

Yes - its CMOS/TTL Schmitt inputs accept V_IL ≤ 1.5 V and V_IH ≥ 3.6 V at V_CC = 15 V, making it compatible with 3.3 V microcontrollers when interfaced through a simple resistive divider or level shifter. Direct 3.3 V drive is possible but marginal; ST recommends verifying noise margin in final layout due to hysteresis centering near 2.5 V.