Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics L6386ADTR

Part No.:
L6386ADTR
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
14-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixL6386ADTR.pdf
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,895

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

L6386ADTR from STMicroelectronics is a high-voltage dual-channel gate driver IC designed for asymmetrical half-bridge topologies, capable of simultaneously driving high-side (up to 600 V rail) and low-side power MOSFETs or IGBTs. It delivers 400 mA source / 650 mA sink peak output current, achieves 50 ns rise / 30 ns fall times with 1 nF load, and integrates bootstrap diode and UVLO on both VCC and VBOOT rails. It is used in induction heating inverters and SR motor drivers where dV/dt immunity (±50 V/ns) and fault diagnostics are critical.

For engineers reviewing the L6386ADTR datasheet, L6386ADTR pinout, L6386ADTR application, or L6386ADTR equivalent, key selection criteria include bootstrap driver RDS(on) (125 Ω), CMOS/TTL Schmitt-trigger inputs with hysteresis, integrated DIAG open-drain fault reporting, and SO-14 package thermal resistance (165 °C/W).

Technical Context

The L6386ADTR implements independent high-side (floating) and low-side driver stages using BCD™ "offline" process technology. Its high-side section operates up to 600 V referenced to VOUT, while the low-side stage references PGND. Both outputs switch in phase with their respective inputs (HIN/LIN), and the SD pin enables synchronous shutdown with <150 ns propagation delay.

It embeds a comparator with 0.5 V internal reference (±40 mV offset) on CIN for overcurrent protection, driving the open-drain DIAG pin. The integrated bootstrap driver replaces external fast-recovery diodes via a synchronously gated DMOS + series diode structure, with typical RDS(on) = 125 Ω and voltage drop calculable as Vdrop = (Qgate/Tcharge) × RDS(on).

Key Specifications

Parameter Value and Actual Design Meaning
High-side voltage rail Up to 600 V - supports direct connection to high-voltage DC bus in induction heating and motor drive half-bridges.
dV/dt immunity ±50 V/ns across full temperature range - prevents false triggering during fast switching transients in noisy industrial environments.
Output drive strength 400 mA source / 650 mA sink - sufficient to rapidly charge/discharge gate capacitance of medium-power MOSFETs (e.g., Qg ≤ 30 nC at 10 V).
Switching speed (CL = 1 nF) 50 ns rise / 30 ns fall - enables >400 kHz PWM operation with minimal dead-time overhead in resonant converters.
UVLO thresholds VCC: 9.6 V turn-on / 8.3 V turn-off; VBOOT: 9.5 V turn-on / 8.2 V turn-off - ensures robust start-up and fault recovery under brownout conditions.
Diagnostic capability Open-drain DIAG output driven by CIN comparator - provides real-time fault signaling (e.g., overcurrent) to MCU without external circuitry.
Bootstrap integration On-chip DMOS + diode structure (RDS(on) = 125 Ω) - eliminates external diode leakage and improves reliability in compact designs.

Pinout & Package

The L6386ADTR is housed in a 14-lead SOIC (SO-14) package with ECOPACK® compliance, measuring 8.75 mm × 4.0 mm × 1.75 mm (max height), and featuring 165 °C/W junction-to-ambient thermal resistance.

Pin/Terminal Circuit Role Design Meaning
1 LIN Low-side logic input CMOS/TTL-compatible Schmitt-trigger input with hysteresis; pulls down internally when un-driven.
2 SD Shutdown control Active-low enable; guarantees <0.3 V output at 10 mA sink - eliminates need for external bleeder resistor on MOSFET gate.
3 HIN High-side logic input CMOS/TTL-compatible Schmitt-trigger input synchronized with LIN; controls floating HVG output.
4 VCC Low-side supply 15 V nominal supply for logic and low-side driver; features UVLO with 1.3 V hysteresis.
5 DIAG Fault diagnostic output Open-drain output tied to comparator; pulled low during CIN over-threshold events (e.g., overcurrent).
6 CIN Comparator input Accepts 0–10 V signal; compares against 0.5 V internal reference for fault detection.
7 SGND Signal ground Reference for logic inputs, comparator, and DIAG; isolated from power ground to reduce noise coupling.
8 PGND Power ground Return path for LVG output and bootstrap charging current; must be low-inductance connection to minimize ringing.
9 LVG Low-side gate driver output Drives external MOSFET/IGBT gate; sources 400 mA / sinks 650 mA; synchronizes bootstrap charging.
10, 11 N.C. No connect Internally unconnected pins; must remain unpopulated and unconnected on PCB.
12 VOUT Floating output reference Connects to high-side switch source node; defines return for HVG and sets common-mode voltage for high-side section.
13 HVG High-side gate driver output Drives high-side MOSFET/IGBT gate referenced to VOUT; shares same timing and drive strength as LVG.
14 VBOOT Bootstrap supply input Charged via integrated DMOS-diode during LVG on-time; supplies floating high-side driver stage (typ. 14–17 V).

Key Features

Feature Design Value
Integrated bootstrap diode Replaces discrete fast-recovery diode with patented DMOS + series diode structure, reducing leakage and board area.
Independent UVLO per supply Dual undervoltage lockout (VCC and VBOOT) prevents erratic switching during power-up/down or bootstrap capacitor discharge.
Schmitt-trigger logic inputs HIN/LIN/SD inputs include hysteresis and internal pull-down - tolerate slow-rising signals and reject noise without external RC filters.
Asymmetrical half-bridge support Both outputs can be driven high simultaneously - enables control of topologies requiring non-complementary switching (e.g., SR motor phases).
Real-time fault reporting DIAG pin directly reflects CIN comparator status - allows immediate MCU response to overcurrent without polling or ADC conversion.

Applications

Induction Heating Inverter Switched Reluctance Motor Driver

Use Scenario: High-frequency resonant inverter (20–100 kHz) driving series-resonant tank with IGBTs for cooktop or industrial heating.

IC Role / Device Role / Timing Role: Dual gate driver providing synchronized high/low-side control with precise dead-time management and dV/dt noise immunity.

Use Value: Integrated bootstrap and ±50 V/ns dV/dt immunity eliminate external diode failure modes and ensure stable operation near metal objects.

Use Scenario: Phase-controlled SRM drive in HVAC blowers or industrial pumps, requiring independent high-side activation per stator phase.

IC Role / Device Role / Timing Role: Asymmetrical half-bridge driver enabling simultaneous high-side conduction across multiple phases without shoot-through risk.

Use Value: In-phase output behavior and 400/650 mA drive strength allow rapid gate charging of medium-power MOSFETs (Qg ≈ 25 nC) at 15 kHz commutation.

Industrial AC Motor Drive Compact Power Supply Half-Bridge

Use Scenario: Sensorless vector-controlled AC induction motor drive in factory automation systems operating from 380–480 VAC rectified bus.

IC Role / Device Role / Timing Role: High-voltage gate driver interfacing MCU PWM outputs to 600 V IGBTs in three-phase inverter leg.

Use Value: 600 V rail rating and 125 °C max junction temperature support continuous operation in enclosed enclosures with limited airflow.

Use Scenario: High-efficiency LLC resonant converter in LED lighting or telecom power supply, using asymmetrical topology for ZVS optimization.

IC Role / Device Role / Timing Role: Gate driver managing high-side FET switching while maintaining tight VBOOT regulation via integrated bootstrap.

Use Value: On-chip RDS(on) = 125 Ω enables predictable bootstrap voltage drop modeling (e.g., <1 V at Qg = 30 nC, Tcharge = 5 ms), simplifying capacitor sizing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2110STRPBF Higher VBS rating (600 V), but no integrated bootstrap diode; requires external fast-recovery diode and larger bootstrap capacitor. Lacks DIAG output and comparator-based fault detection - external sensing and logic needed for overcurrent protection. Choose when legacy design uses discrete bootstrap diode and cost sensitivity outweighs diagnostic integration.
UCC27211D Lower max voltage (120 V high-side), higher peak current (4 A source/4 A sink), no UVLO on bootstrap rail. Not suitable for 400+ V bus applications; optimized for high-frequency GaN/SiC half-bridges below 200 V. Prefer only for low-voltage, high-speed designs where 600 V capability is unnecessary and peak current >2 A is required.

Compared with IR2110STRPBF, L6386ADTR reduces bill-of-materials count and improves fault response time via integrated diagnostics; versus UCC27211D, it trades peak current for high-voltage robustness and system-level protection features essential in industrial mains-connected equipment.

Availability

L6386ADTR is available at Aetrix Electronics and suitable for induction heating inverters, switched reluctance motor drives, and industrial AC motor drives requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for L6386ADTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.

The L6386ADTR belongs to ST's high-voltage gate driver product line, engineered specifically for rugged industrial motor control and resonant power conversion where integrated protection, bootstrap efficiency, and noise immunity are mandatory.

FAQ

What is the maximum allowable dV/dt at the HVG output without false triggering?

The L6386ADTR guarantees ±50 V/ns dV/dt immunity across its full operating temperature range (−45 °C to +125 °C), verified per datasheet test conditions. This specification ensures reliable operation even during fast-switching events in high-noise environments like induction heating or motor drives, without requiring additional snubbers or filtering on the gate node.

Can the DIAG pin drive an optocoupler directly for isolated fault signaling?

Yes - the DIAG pin is an open-drain output rated for 2.5 mA sink current at ≤0.8 V low-level voltage. It can directly interface with standard optocoupler LEDs (e.g., PC817, 1.2 V forward voltage) using a 4.7 kΩ pull-up to 5 V, delivering ~0.8 mA LED current. No level-shifting or buffering is required for basic isolation.

How does the integrated bootstrap driver affect minimum achievable switching frequency?

The integrated bootstrap driver imposes no hard lower limit on switching frequency, but CBOOT must recharge fully during each LVG on-time. At very low frequencies (<1 kHz), leakage dominates; typical steady-state HVG current is <200 µA, so a 1 µF CBOOT sustains >5 ms on-time before >1 V droop. Designers should verify Tcharge ≥ Qgate × RDS(on) / ΔVBOOT for target duty cycle.

Is the L6386ADTR pin-compatible with earlier L6386A variants?

Yes - the L6386ADTR maintains identical pinout, electrical characteristics, and functional behavior as the L6386A and L6386AD versions. The "TR" suffix denotes tape-and-reel packaging (per Table 8), with no changes to silicon or functionality. Existing PCB layouts and firmware require no modification for drop-in replacement.

L6386ADTR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
14-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
17V (Max)
Logic Voltage - VIL, VIH:
1.5V, 3.6V
Current - Peak Output (Source, Sink):
400mA, 650mA
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
50ns, 30ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
14-SO

L6386ADTR FAQ

1.How can I place an order for L6386ADTR through Aetrix?

Please submit a Request for Quotation (RFQ) for L6386ADTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for L6386ADTR reliable?

The price and inventory of L6386ADTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6386ADTR is usually 5 days.

3.What payment methods are accepted for L6386ADTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6386ADTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for L6386ADTR?

L6386ADTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your L6386ADTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for L6386ADTR?

For technical support, including L6386ADTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6386ADTR requirements.

6.How does Aetrix verify that L6386ADTR is sourced from the original manufacturer or authorized distributors?

All L6386ADTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6386ADTR meets industry standards.

7.What is the process for return or replacement of L6386ADTR?

All L6386ADTR units undergo pre-shipment inspection (PSI). If there is an issue with L6386ADTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The L6386ADTR part is unused and in its original packaging.

Return procedure for L6386ADTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

L6386ADTR Tags

  • L6386ADTR
  • L6386ADTR PDF
  • L6386ADTR Datasheet
  • L6386ADTR Specifications
  • L6386ADTR Images
  • STMicroelectronics
  • STMicroelectronics L6386ADTR
  • Buy L6386ADTR
  • L6386ADTR Price
  • L6386ADTR Distributor
  • L6386ADTR Supplier
  • L6386ADTR Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER