STMicroelectronics L6386D013TR

Overview

L6386D013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive high-side and low-side N-channel power MOSFETs or IGBTs in half-bridge configurations. It features 600 V rail capability, ±50 V/ns dV/dt immunity, 400 mA source / 650 mA sink output current, 50/30 ns rise/fall times (1 nF load), and integrated bootstrap diode - enabling robust motor control and SMPS applications up to 400 kHz switching frequency.

For engineers reviewing the L6386D013TR datasheet, L6386D013TR pinout, L6386D013TR application, or L6386D013TR equivalent, key selection criteria include floating high-side operation up to 600 V, UVLO on both VCC and VBOOT rails, CMOS/TTL-compatible Schmitt-trigger inputs with hysteresis, open-drain diagnostic output, and thermal performance validated across −45 °C to +125 °C junction temperature.

Technical Context

The L6386D013TR implements a BCD "OFF-LINE" process-based architecture with independent high-side (floating) and low-side (ground-referenced) driver stages. Its integrated bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS+diode structure, reducing leakage and board area while requiring VOUT near ground during LVG conduction for charging.

UVLO protection operates separately on VCC (12.0 V turn-on, 10.0 V turn-off) and VBOOT (11.9 V turn-on, 9.9 V turn-off), each with 2 V hysteresis. The diagnostic output (pin 5) provides open-drain fault reporting, and the comparator input (pin 6) supports overcurrent sensing with 0.5 V reference and ±10 mV offset.

Key Specifications

Pinout & Package

Package: SO-14 (Small Outline, 14-pin, surface-mount). Dimensions per STMicroelectronics mechanical drawing: 8.75 mm × 6.2 mm × 1.75 mm (L × W × H), 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211D, the L6386D013TR uniquely combines 600 V capability, integrated bootstrap diode, dual UVLO, and diagnostic reporting in a single SO-14 package - making it optimal for compact, reliable, and self-monitoring half-bridge designs.

Availability

L6386D013TR is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for L6386D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.

The L6386 series belongs to ST's high-voltage gate driver product line, engineered specifically for robust, cost-effective half-bridge control in industrial and consumer power conversion systems.

FAQ

What is the maximum allowable voltage difference between VBOOT and OUT?

The absolute maximum VBOOT − OUT is 18 V, as specified in the Recommended Operating Conditions. Exceeding this causes internal bootstrap driver overvoltage stress and may trigger UVLO or damage. This limit ensures safe operation of the integrated DMOS bootstrap switch and defines the minimum required bootstrap capacitor voltage headroom during high-side conduction.

Can L6386D013TR drive IGBTs directly without external components?

Yes - the L6386D013TR delivers 400 mA source and 650 mA sink current, sufficient to drive standard 15–30 A IGBTs with typical gate charge ≤50 nC at 400 kHz. No external gate resistors are required for basic operation, though small series resistors (≤10 Ω) are recommended for EMI suppression and ringing control in high-dI/dt layouts.

How does the integrated bootstrap driver affect minimum duty cycle?

The integrated bootstrap driver requires LVG to be active while OUT is near PGND to recharge CBOOT. This imposes a practical minimum low-side on-time (~1–2 µs depending on CBOOT size and gate charge), limiting achievable high-side duty cycle to ~99% in continuous conduction mode. For 100% high-side duty, an external bootstrap diode or isolated supply is required.

Is the DIAG pin compatible with 3.3 V microcontroller inputs?

Yes - the DIAG pin is open-drain with a maximum VOL of 0.8 V at −2.5 mA sink current. When pulled up to 3.3 V via a 10 kΩ resistor, it reliably signals logic-low faults to 3.3 V GPIOs. No level-shifting is needed, and the pin remains inactive (high-impedance) during normal operation, minimizing MCU input loading.