STMicroelectronics L6386E

Overview

L6386E from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed for asymmetrical half-bridge topologies, capable of simultaneously driving high-side (up to 600 V rail) and low-side power MOSFETs or IGBTs. It delivers 400 mA source / 650 mA sink output current, achieves 50 ns rise / 30 ns fall times with 1 nF load, and integrates bootstrap diode and UVLO on both VCC and VBOOT rails. It is widely deployed in induction heating systems and industrial motor drives.

For engineers reviewing the L6386E datasheet, L6386E pinout, L6386E application, or L6386E equivalent, key selection considerations include dV/dt immunity (±50 V/ns), CMOS/TTL Schmitt-trigger inputs with hysteresis, integrated diagnostic comparator (0.5 V reference), and dual-package availability (DIP-14 and SO-14).

Technical Context

The L6386E implements independent high-side (floating) and low-side driver stages using BCD™ "offline" technology, enabling operation with VBOOT up to 618 V and VOUT down to −3 V. Its bootstrap driver uses an integrated high-voltage DMOS + series diode structure, eliminating external fast-recovery diodes while maintaining <125 Ω R_DS(on) and supporting ≤400 kHz switching.

Logic interface features CMOS/TTL-compatible inputs with 1.5 V low-level and 3.6 V high-level thresholds, pull-down biasing, and hysteresis. The DIAG open-drain output signals fault events via an internal comparator referenced to 0.5 V, triggered by overcurrent detection at the CIN pin.

Key Specifications

Pinout & Package

Available in DIP-14 (through-hole) and SO-14 (surface-mount) packages, both RoHS-compliant and ECOPACK®-certified. Pin functions are identical across packages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110S and UCC27712DR, the L6386E uniquely combines integrated bootstrap diode, dual-rail UVLO, and diagnostic comparator in a single 14-pin package-reducing bill-of-materials, improving system-level reliability, and accelerating time-to-market for cost-sensitive industrial and appliance applications.

Availability

L6386E is available at Aetrix Electronics and suitable for induction heating systems, industrial motor drives, and HVAC inverter modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for L6386E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog components for industrial, automotive, and consumer markets.

The L6386E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, cost-effective control of power switches in asymmetrical half-bridge topologies used in home appliances and factory automation equipment.

FAQ

What is the maximum allowable dV/dt at the high-side output without false triggering?

The L6386E guarantees ±50 V/ns dV/dt immunity across its full operating temperature range (−45 °C to +125 °C). This specification is validated per datasheet test conditions and ensures reliable operation during fast voltage transients common in IGBT-based inverter circuits, without requiring additional external filtering or snubbers.

Can the L6386E drive both MOSFETs and IGBTs interchangeably?

Yes-the L6386E is explicitly characterized to drive both power MOSFETs and IGBTs. Its 400 mA source / 650 mA sink capability, 50/30 ns switching times into 1 nF, and 600 V high-side rail rating match typical gate drive requirements for devices like STP16NF06L (MOSFET) and STGW40H65DF (IGBT) in half-bridge configurations.

How does the integrated bootstrap diode affect boot capacitor sizing?

The integrated DMOS-diode structure reduces boot capacitor discharge due to diode leakage, allowing smaller C_BOOT values. For a 30 nC gate charge MOSFET, 100 nF is typically sufficient-whereas external diodes often require ≥220 nF to compensate for leakage. Charging time must still exceed 5 µs to limit voltage drop to <1 V.

Is the DIAG pin compatible with 3.3 V microcontrollers?

Yes-the DIAG pin is an open-drain output with guaranteed low-level voltage ≤0.8 V at −2.5 mA sink current. When pulled up to 3.3 V via an external resistor, it provides clean logic-level fault signaling directly to 3.3 V MCU GPIOs without level-shifting circuitry.