STMicroelectronics L6386ED013TR

Overview

L6386ED013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed for asymmetrical half-bridge topologies, capable of simultaneously driving high-side (up to 600 V rail) and low-side power MOSFETs or IGBTs. It delivers 400 mA source / 650 mA sink output current, achieves 50 ns rise / 30 ns fall times with 1 nF load, and integrates bootstrap diode and UVLO on both VCC and VBOOT rails. It is used in induction heating inverters and industrial motor drives requiring robust dV/dt immunity (±50 V/ns).

For engineers reviewing the L6386ED013TR datasheet, L6386ED013TR pinout, L6386ED013TR application, or L6386ED013TR equivalent, key selection criteria include bootstrap-integrated high-side drive capability, independent UVLO thresholds (VCC: 12.0 V turn-on, VBOOT: 11.9 V turn-on), CMOS/TTL Schmitt inputs with hysteresis, and diagnostic open-drain output for overcurrent fault signaling.

Technical Context

The L6386ED013TR implements a floating high-side driver architecture using BCD™ "offline" process technology, enabling operation with VBOOT up to 618 V and VOUT down to –3 V relative to VBOOT. Its integrated bootstrap driver replaces external fast-recovery diodes via a synchronous DMOS + series diode structure, with typical R_DS(on) of 125 Ω and controlled charging timing dependent on LVG conduction.

It features dual independent UVLO circuits (VCC and VBOOT), a comparator with 0.5 V internal reference (pin CIN), and an open-drain DIAG output that asserts low during overcurrent events. Logic inputs (LIN, HIN, SD) are CMOS/TTL compatible with Vil = 1.5 V, Vih = 3.6 V, and built-in pull-downs - eliminating need for external bleeder resistors on SD.

Key Specifications

Pinout & Package

The L6386ED013TR is packaged in SO-14 surface-mount format (ECOPACK® compliant), offering compact footprint and thermal resistance R_th(JA) = 165 °C/W. Pin configuration is identical to the DIP-14 variant but optimized for automated assembly and higher-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IRS21844STRPBF and UCC27211D, the L6386ED013TR uniquely combines integrated bootstrap, diagnostic feedback, and asymmetrical half-bridge optimization - reducing bill-of-materials, improving reliability in induction heating and motor drive applications, and simplifying fault-handling firmware.

Availability

L6386ED013TR is available at Aetrix Electronics and suitable for industrial motor drivers, induction heating inverters, and HVAC blower control systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for L6386ED013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6386ED013TR belongs to ST's high-voltage gate driver product line, engineered specifically for robust, integrated half-bridge control in energy-efficient power conversion systems - emphasizing dV/dt immunity, bootstrap integration, and system-level fault diagnostics.

FAQ

What is the purpose of the DIAG pin on the L6386ED013TR?

The DIAG pin is an open-drain diagnostic output driven low when the internal comparator detects a fault condition - such as overcurrent sensed at the CIN pin exceeding the 0.5 V reference threshold. It provides immediate, hardware-level fault signaling to the host controller without software polling, enabling fast shutdown response and system protection.

Can the L6386ED013TR drive both MOSFETs and IGBTs?

Yes - the L6386ED013TR is explicitly rated for driving both power MOSFETs and IGBTs, with 400 mA source and 650 mA sink output current per channel. Its 600 V high-side capability, fast switching (50/30 ns), and robust dV/dt immunity make it suitable for medium-power IGBTs (e.g., 30–60 A, 600 V) and MOSFETs (e.g., Q_g ≤ 30 nC) in hard-switched topologies.

How does the integrated bootstrap driver function without an external diode?

The L6386ED013TR uses a patented internal structure: a high-voltage DMOS transistor driven synchronously with LVG, combined with a series diode and internal charge pump. When LVG is active and OUT is near PGND, the DMOS conducts to charge CBOOT. The series diode blocks reverse conduction, eliminating leakage and reliability issues associated with discrete fast-recovery diodes.

What are the critical layout considerations for stable operation?

Key layout practices include: (1) short, low-inductance paths from PGND to LVG and from SGND to CIN/DIAG; (2) separate SGND and PGND planes joined at single point near pin 7; (3) localized 100 nF ceramic decoupling on VCC and VBOOT; (4) minimized loop area for bootstrap capacitor (CBOOT) and high-side gate path; and (5) guard ring around CIN to reduce noise coupling into the comparator input.