STMicroelectronics L6387DTR

Overview

L6387DTR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive N-channel power MOSFETs or IGBTs in half-bridge topologies. It features 600 V floating rail capability, ±50 V/ns dV/dt immunity across −45°C to +125°C, 400 mA source / 650 mA sink output current, 50 ns rise / 30 ns fall times (1 nF load), and integrated bootstrap diode functionality. It is used in industrial motor drives and SMPS inverters requiring robust high-side switching.

For engineers reviewing the L6387DTR datasheet, L6387DTR pinout, L6387DTR application, or L6387DTR equivalent, key selection criteria include bootstrap driver Rdson (125 Ω), UVLO thresholds (6.0 V turn-on / 5.5 V turn-off), interlocked logic inputs, and SO8 package thermal resistance (100 °C/W).

Technical Context

The L6387DTR implements a BCD "Off-Line" process-based architecture with separate low-side (LVG) and high-side (HVG) drivers referenced to GND and floating VOUT respectively. Its internal bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS+diode structure, enabling self-charging during LVG conduction.

Logic inputs (HIN/LIN) are CMOS/TTL compatible with Schmitt-trigger hysteresis and internal pull-downs. Interlocking logic prevents simultaneous HVG/LVG activation per truth table, ensuring shoot-through protection. UV detection on Vcc triggers shutdown below 5.5 V with 0.5 V hysteresis.

Key Specifications

Pinout & Package

Package: SO8 (Small Outline Integrated Circuit, 150 mil width), surface-mount, RoHS-compliant, thermal resistance R_{th j-amb} = 100 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211D, the L6387DTR uniquely integrates the bootstrap diode and delivers balanced 400/650 mA drive within a single SO8 package-reducing component count and layout complexity for cost-sensitive industrial inverters operating up to 400 kHz.

Availability

L6387DTR is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, induction heating systems, and uninterruptible power supplies requiring stable component supply and long-term design-in support.

Supply support for L6387DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions with vertical manufacturing capabilities.

The L6387DTR belongs to ST's high-voltage gate driver product line, engineered specifically for robust, cost-effective half-bridge control in industrial AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable bootstrap capacitor discharge voltage drop?

The L6387DTR's internal bootstrap DMOS has R_DS(on) ≈ 125 Ω. For a typical 30 nC MOSFET gate charge and 5 µs charging window, voltage drop is ~0.8 V. To limit total C_BOOT droop to ≤300 mV, C_BOOT must be ≥100× C_EXT, where C_EXT = Q_g/V_GS. Leakage and duty cycle also affect steady-state hold-up.

Can L6387DTR drive SiC MOSFETs?

L6387DTR can drive low-to-mid-power SiC MOSFETs (e.g., ≤1200 V, Q_g < 25 nC) but lacks the 10–20 A peak drive and sub-10 ns propagation delays typical of dedicated SiC drivers. Its 650 mA sink is sufficient for gate turn-off in <5 kW applications, though layout parasitics must be minimized to avoid oscillation.

How does the interlock logic prevent shoot-through?

The L6387DTR implements hardware interlock: only HIN=1/LIN=0 yields HVG=1, and only HIN=0/LIN=1 yields LVG=1. All other combinations (0/0, 1/1) force both outputs low. This eliminates reliance on MCU-level dead-time insertion and prevents overlap even during transient noise or reset events.

Is the SO8 package thermally adequate for continuous 600 V operation?

Yes - the SO8 package has R_{th j-amb} = 100 °C/W. At 750 mW P_tot and 25°C ambient, junction temperature rises to 100°C, well within the 150°C absolute max. For sustained 600 V switching, PCB copper area (≥2 cm² per side under pin 5/7) and airflow >0.5 m/s are recommended to maintain T_j < 125°C.