STMicroelectronics L6387ED

Overview

L6387ED from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs and IGBTs in high-side/low-side configurations. It supports up to 600 V rail voltage, delivers 400 mA source / 650 mA sink output current, achieves 50 ns rise / 30 ns fall times with 1 nF load, and integrates an internal bootstrap diode for compact high-side supply generation. It is used in AC motor drives for HVAC compressors.

For engineers reviewing the L6387ED datasheet, L6387ED pinout, L6387ED application, or L6387ED equivalent, key selection criteria include dV/dt immunity (±50 V/ns), interlocking logic to prevent shoot-through, UVLO thresholds (6.0 V turn-on, 5.5 V turn-off), and SO-8 package thermal resistance (150 °C/W).

Technical Context

The L6387ED implements independent high-side and low-side drivers with CMOS/TTL-compatible Schmitt-trigger inputs and built-in interlocking logic that forces both outputs low when HIN and LIN are simultaneously high. Its floating high-side section operates referenced to VOUT and is powered via an integrated bootstrap driver with 125 Ω typical R_DS(on).

It features dual UVLO protection: one on VCC (5.5–6.5 V hysteresis) and another implicitly enforced on the bootstrap supply (VBOOT ≥ 8 V). The device guarantees phase-aligned outputs (HVG follows HIN, LVG follows LIN) and provides dV/dt noise immunity across −45 °C to +125 °C.

Key Specifications

Pinout & Package

The L6387ED is available in SO-8 package (ECOPACK® compliant, 1.27 mm pitch, 5.0 × 6.0 mm body). Pin functions are validated per STMicroelectronics DocID13990 Rev 4, Figure 2 and Table 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2104S and UCC27201D, the L6387ED uniquely combines 600 V capability, integrated bootstrap diode, and interlocking logic in SO-8 - making it optimal for cost-sensitive, space-constrained industrial motor drives requiring inherent shoot-through prevention.

Availability

L6387ED is available at Aetrix Electronics and suitable for HVAC compressor inverters, PMAC traction drives, induction heating systems, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for L6387ED includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.

The L6387ED belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact half-bridge control in industrial motor drives and resonant power conversion systems.

FAQ

What is the minimum bootstrap capacitor value recommended for L6387ED at 400 kHz switching?

For 400 kHz operation with a 30 nC gate charge MOSFET, ST recommends ≥100 nF CBOOT to limit voltage droop to <300 mV per cycle. Larger values (e.g., 220 nF) improve margin under temperature variation and leakage, especially when HVG conduction time exceeds 5 µs. Layout must minimize trace inductance between VBOOT, CBOOT, and VOUT.

Does L6387ED require external dead-time insertion?

No - the L6387ED includes hardware interlocking logic that forces both HVG and LVG low whenever HIN and LIN are simultaneously high, eliminating shoot-through risk without external timing circuitry. However, external dead-time may still be added upstream for additional safety margin in critical applications.

Can L6387ED drive IGBTs with 15 V gate drive?

Yes - the L6387ED delivers 15 V gate drive (VCC = 15 V) with 400 mA source current, sufficient to fully enhance standard 1200 V IGBTs requiring ≤2 µC total gate charge. Its 650 mA sink current ensures fast turn-off even at elevated junction temperatures up to 125 °C.

How does the integrated bootstrap driver affect efficiency compared to discrete diode solutions?

The integrated DMOS+diode structure reduces reverse leakage current by >10× versus typical 1N4148-based bootstrap circuits, improving light-load efficiency and thermal stability. Its 125 Ω R_DS(on) introduces ~0.8 V drop at 30 nC/5 µs charging - a trade-off accepted for BOM simplification and reliability in industrial environments.