STMicroelectronics L6387ED013TR
- Part No.:
- L6387ED013TR
- Manufacturer:
- STMicroelectronics
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
L6387ED013TR.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:4,491
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Product details
Overview
L6387ED013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs and IGBTs in switching topologies. It integrates high-side (up to 600 V rail) and low-side drivers with 400 mA source / 650 mA sink capability, 50/30 ns rise/fall times into 1 nF load, and built-in interlocking logic to prevent shoot-through. It is used in motor drives for PMDC and PMAC motors, induction heating systems, and HVAC inverters.
For engineers reviewing the L6387ED013TR datasheet, L6387ED013TR pinout, L6387ED013TR application, or L6387ED013TR equivalent, key selection criteria include dV/dt immunity (±50 V/ns), bootstrap diode integration, UVLO thresholds (6.0 V turn-on), and SO-8 package thermal resistance (150 °C/W).
Technical Context
The L6387ED013TR implements independent CMOS/TTL-compatible Schmitt-trigger inputs with hysteresis and internal pull-down, enabling robust noise immunity across industrial temperature ranges. Its interlocking logic (Table 7) ensures HVG and LVG never simultaneously assert high, eliminating external dead-time circuitry.
The integrated bootstrap driver uses a patented high-voltage DMOS + series diode structure, replacing external fast-recovery diodes. It operates only when LVG is active and VOUT is near GND, with typical Rdson of 125 Ω - introducing a calculable voltage drop (e.g., ~0.8 V at 30 nC gate charge and 5 µs charging time) that impacts effective VBS margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-side voltage rating | 600 V max rail - supports direct connection to 400 V AC line-derived DC buses without level-shifting. |
| dV/dt immunity | ±50 V/ns - prevents false triggering during fast-switching transients in motor and inverter applications. |
| Output drive strength | 400 mA source / 650 mA sink - sufficient to rapidly charge/discharge 1–3 nF gate capacitances of 600 V IGBTs/MOSFETs. |
| Propagation delay | 110 ns turn-on / 105 ns turn-off - enables precise timing control up to 400 kHz switching frequency. |
| VCC UVLO threshold | 6.0 V (typ) turn-on, 5.5 V (typ) turn-off - ensures stable operation during brown-out conditions in industrial power supplies. |
| Bootstrap diode | Integrated DMOS+diode structure - eliminates external diode leakage and PCB area, simplifying layout in compact inverters. |
| Package thermal resistance | Rth(JA) = 150 °C/W (SO-8) - requires heatsinking or derating above ~300 mW dissipation at ambient >85 °C. |
Pinout & Package
Available in SO-8 package (ECOPACK® compliant), 5.0 mm × 6.0 mm body, 1.27 mm pitch, with exposed pad for thermal enhancement (not electrically connected). Pin 1 marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| LIN | Low-side logic input | CMOS/TTL-compatible input with hysteresis; pulls down internally - accepts 0–15 V logic signals directly from MCU GPIO. |
| HIN | High-side logic input | Independent Schmitt-trigger input; interlocked with LIN - prevents simultaneous high output via on-chip logic. |
| VCC | Low-side supply | 17 V max supply; powers low-side driver and logic - includes UVLO with 0.5 V hysteresis for reliable startup. |
| GND | Reference ground | Common return for VCC and LVG - must be star-connected to minimize ground bounce in high-di/dt layouts. |
| LVG | Low-side gate output | Drives N-channel MOSFET/IGBT gate; 650 mA sink capability - supports fast turn-off even with large Miller capacitance. |
| OUT | Floating reference | Connects to source of high-side switch - defines local ground for high-side driver section and bootstrap capacitor return. |
| HVG | High-side gate output | Drives high-side switch gate referenced to OUT - capable of sourcing 400 mA into capacitive loads up to 600 V potential. |
| VBOOT | Bootstrap supply | Input for floating 17 V supply; charges via internal DMOS+diode - eliminates need for external bootstrap diode and reduces leakage path. |
Key Features
| Feature | Design Value |
|---|---|
| Interlocking logic | Hardware-enforced mutual exclusion between HVG and LVG outputs - removes risk of shoot-through without software or external timing circuits. |
| Integrated bootstrap diode | Patented DMOS+series diode structure - reduces component count, improves reliability, and cuts leakage vs. discrete diodes in high-temp environments. |
| High dV/dt immunity | ±50 V/ns over full -45°C to +125°C range - maintains correct output state during rapid bus voltage transitions in motor phase-leg switching. |
| Output in-phase with inputs | HVG follows HIN, LVG follows LIN - simplifies control firmware and eliminates need for polarity inversion in gate driver interface logic. |
| UVLO on VCC | 6.0 V turn-on / 5.5 V turn-off with 0.5 V hysteresis - prevents erratic operation during undervoltage events common in unregulated auxiliary supplies. |
Applications
| Motor Drive for PMAC Compressors | Induction Heating Inverters |
|---|---|
Use Scenario: Driving three-phase PMAC compressor in HVAC variable-speed air conditioning units using space-vector PWM at 15–25 kHz. IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated, synchronized high/low-side gate signals with interlock protection to prevent inverter leg short-circuits. Use Value: Enables compact inverter design with reduced BOM count (no external bootstrap diodes) and robust operation under high dv/dt noise from adjacent phases. | Use Scenario: Full-bridge resonant inverter driving 20–100 kHz induction coils in domestic cooktops and industrial heating systems. IC Role / Device Role / Timing Role: High-voltage gate driver controlling IGBTs in ZVS/ZCS topologies where precise timing and shoot-through prevention are critical. Use Value: Integrated interlock and 600 V rating allow direct use with 400 V DC bus; 50/30 ns switching supports high-frequency resonant control with minimal dead-time penalty. |
| Industrial BLDC Motor Drives | UPS and Solar Inverter Auxiliary Drivers |
Use Scenario: 3 kW BLDC traction drive in automated guided vehicles (AGVs), operating from 300–400 V DC bus with regenerative braking. IC Role / Device Role / Timing Role: Gate driver for six half-bridges in 3-phase inverter stage, managing gate timing under high-current transient conditions. Use Value: 650 mA sink current ensures fast IGBT turn-off during fault events; dV/dt immunity prevents false triggering during regen spikes. | Use Scenario: Auxiliary gate driving in 10 kVA UPS inverters and string-level solar inverters requiring isolated, compact, and thermally efficient driver stages. IC Role / Device Role / Timing Role: Secondary-side gate driver for high-side switches in DC-DC isolation stages or auxiliary inverter legs. Use Value: SO-8 package with ECOPACK® compliance meets RoHS/REACH requirements; integrated bootstrap reduces footprint in space-constrained control boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2110STRPBF | No integrated bootstrap diode; requires external fast-recovery diode; higher propagation delay (120/94 ns); 500 mA sink. | Suitable for lower-cost designs where board space allows external diode; less immune to bootstrap leakage at high temperature. | Select if legacy design compatibility or cost sensitivity outweighs integration benefit and thermal performance. |
| UCC27324DR | Only low-side driver (dual); no high-side or bootstrap capability; 4 A peak drive; 25 ns rise time. | Requires external high-side solution (e.g., transformer or isolated supply); suited for asymmetric topologies or discrete high-side control. | Choose only for low-side-only roles or when paired with separate high-side driver - not a functional replacement for L6387ED013TR's half-bridge integration. |
Compared with IR2110STRPBF and UCC27324DR, the L6387ED013TR uniquely combines integrated bootstrap, interlock logic, and 600 V high-side capability in SO-8 - reducing component count and improving reliability in compact inverter modules where layout area and thermal management are constrained.
Availability
L6387ED013TR is available at Aetrix Electronics and suitable for motor drives, induction heating systems, and HVAC inverters requiring stable component supply across extended production lifecycles.
Supply support for L6387ED013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.
The L6387E belongs to ST's high-voltage gate driver product line, engineered for robustness in industrial motor control and resonant power conversion - emphasizing integration, noise immunity, and long-term manufacturability.
FAQ
What is the maximum allowable bootstrap capacitor discharge voltage drop for reliable L6387ED013TR operation?
The effective VBS must remain ≥8 V to sustain high-side drive. With typical VBOOT = 17 V and minimum VOUT = –3 V, the maximum allowable CBOOT voltage drop is ~9 V. However, design practice limits drop to ≤1.5 V to maintain margin against Rdson loss, temperature drift, and gate threshold variation - requiring CBOOT ≥ 10× CEXT (e.g., 100 nF for 3 nF MOSFET gate capacitance).
Can L6387ED013TR drive 1200 V SiC MOSFETs?
No. The L6387ED013TR is rated for 600 V high-side rail operation (VBOOT – VOUT ≤ 618 V). Driving 1200 V SiC devices would exceed absolute maximum ratings and risk catastrophic failure. For 1200 V systems, ST recommends the STGAP2SICSN or similar 1200 V-rated isolated gate drivers.
How does the interlocking function behave when both HIN and LIN are high?
Per Table 7 in the datasheet, when HIN = 1 and LIN = 1, both HVG and LVG are forced low - ensuring shoot-through prevention. This is hardwired logic, not software-configurable, and operates independently of propagation delays or temperature, making it fail-safe across all operating conditions.
Is the SO-8 package of L6387ED013TR lead-free and RoHS-compliant?
Yes. The L6387ED013TR in SO-8 packaging carries ST's ECOPACK®2 designation, confirming full compliance with RoHS Directive 2011/65/EU and halogen-free status per IEC 61249-2-21. The device uses matte tin (Sn) termination finish and meets JEDEC J-STD-020 moisture sensitivity level MSL3.
L6387ED013TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 17V (Max)
- Logic Voltage - VIL, VIH:
- 1.5V, 3.6V
- Current - Peak Output (Source, Sink):
- 400mA, 650mA
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 50ns, 30ns
- Operating Temperature:
- -45°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
L6387ED013TR FAQ
1.How can I place an order for L6387ED013TR through Aetrix?
Please submit a Request for Quotation (RFQ) for L6387ED013TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for L6387ED013TR reliable?
The price and inventory of L6387ED013TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6387ED013TR is usually 5 days.
3.What payment methods are accepted for L6387ED013TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6387ED013TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for L6387ED013TR?
L6387ED013TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your L6387ED013TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for L6387ED013TR?
For technical support, including L6387ED013TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6387ED013TR requirements.
6.How does Aetrix verify that L6387ED013TR is sourced from the original manufacturer or authorized distributors?
All L6387ED013TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6387ED013TR meets industry standards.
7.What is the process for return or replacement of L6387ED013TR?
All L6387ED013TR units undergo pre-shipment inspection (PSI). If there is an issue with L6387ED013TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The L6387ED013TR part is unused and in its original packaging.
Return procedure for L6387ED013TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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