STMicroelectronics L6388D

Overview

L6388D from STMicroelectronics is a high-voltage dual-channel gate driver IC designed for half-bridge topologies driving N-channel MOSFETs or IGBTs. It integrates high-side (up to 600 V rail) and low-side drivers with interlocked logic, 400 mA source / 650 mA sink output capability, 70/40 ns rise/fall times into 1 nF, and internal bootstrap diode. Used in motor control inverters and SMPS power stages.

For engineers reviewing the L6388D datasheet, L6388D pinout, L6388D application, or L6388D equivalent, this page delivers verified electrical parameters, thermal limits, dead-time behavior, UVLO thresholds, and SO8 package-specific layout guidance - all critical for reliable high-voltage gate drive design and cross-conduction prevention.

Technical Context

The L6388D implements independent high-side and low-side drivers using BCD "Off-Line" technology, enabling floating operation up to 600 V on the HVG output referenced to VOUT. Its logic inputs (HIN/LIN) accept 3.3 V/5 V/15 V CMOS/TTL levels with hysteresis and pull-down, and feature interlocking plus programmable dead time (220–420 ns) to prevent shoot-through.

It includes integrated bootstrap driver circuitry with 125 Ω typical R_DS(on), eliminating external fast-recovery diodes. UV detection operates separately on VCC (9.1–10.1 V turn-on, 7.9–8.8 V turn-off) and VBOOT (8.5–10.5 V turn-on, 7.2–9.2 V turn-off), both with 0.9 V hysteresis across –45 °C to +125 °C.

Key Specifications

Pinout & Package

Package: SO8 (Small Outline Integrated Circuit, 150 °C/W junction-to-ambient thermal resistance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110SPbF and UCC27324DR, the L6388D uniquely combines 600 V high-side capability, integrated bootstrap diode, sub-300 ns propagation delay, and hardware interlock - making it optimal for compact, cost-sensitive industrial inverters requiring robust shoot-through protection without external components.

Availability

L6388D is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, appliance power modules, and UPS half-bridge stages requiring stable component supply and long-term production continuity.

Supply support for L6388D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6388D belongs to ST's high-voltage gate driver product line, engineered specifically for robust, integrated half-bridge control in AC-DC and DC-AC conversion systems operating up to 600 V.

FAQ

What is the maximum allowable V_BOOT voltage for the L6388D?

The absolute maximum V_BOOT voltage is 618 V relative to GND, as specified in Table 4. This limit ensures safe operation of the internal bootstrap DMOS and level shifter under worst-case transient conditions. Exceeding this value risks permanent damage to the high-side driver section, especially during startup or fault recovery sequences where V_OUT may swing near the rail.

Can the L6388D drive SiC MOSFETs effectively?

Yes - the L6388D's 400 mA source / 650 mA sink capability, 70 ns rise time into 1 nF, and ±50 V/ns dV/dt immunity make it suitable for driving medium-power SiC MOSFETs (e.g., 1200 V/40 mΩ types) in hard-switched topologies up to 200 kHz. However, gate resistor selection must account for its 125 Ω bootstrap R_DS(on) to avoid excessive V_BOOT droop during high-duty-cycle operation.

How does the interlock function behave when both HIN and LIN are high?

When both HIN and LIN are simultaneously high, the interlock circuit forces a minimum dead time (220–420 ns) before either output can transition - ensuring LVG turns off before HVG turns on, and vice versa. This hardware-level enforcement occurs independently of input timing and prevents cross-conduction even if control logic fails to sequence signals correctly.

Is an external bootstrap diode ever required with the L6388D?

An external bootstrap diode is optional but recommended for applications demanding >95% duty cycle or operating above 300 kHz, where internal DMOS R_DS(on) (125 Ω typ.) causes unacceptable V_BOOT droop. The datasheet explicitly states the internal structure "can be replaced by an external diode" in such cases - preserving compatibility while improving efficiency and thermal margin.