STMicroelectronics L6388D013TR

Overview

L6388D013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed for driving independent N-channel MOSFETs or IGBTs in half-bridge configurations. It features 600 V high-side floating rail capability, ±50 V/ns dV/dt immunity across −45°C to +125°C, 400 mA source / 650 mA sink output drive strength, and integrated bootstrap diode. It is used in industrial motor drives and SMPS inverters requiring robust shoot-through prevention.

For engineers reviewing the L6388D013TR datasheet, L6388D013TR pinout, L6388D013TR application, or L6388D013TR equivalent, key selection criteria include bootstrapped high-side voltage range (up to 618 V), dead time control (220–420 ns), CMOS/TTL-compatible inputs with hysteresis, and SO8 tape-and-reel packaging for automated assembly.

Technical Context

The L6388D013TR implements a BCD "off-line" process-based dual-driver architecture with independent high-side (HVG) and low-side (LVG) outputs referenced to floating (OUT) and ground (GND) potentials respectively. Its interlocking logic and programmable dead time prevent simultaneous conduction, while internal UV detection on both VCC (9.1–10.1 V turn-on) and VBOOT (8.5–10.5 V turn-on) ensures safe operation under brown-out conditions.

It integrates a patented synchronous bootstrap driver using a high-voltage DMOS switch and series diode, eliminating external fast-recovery diodes. The bootstrap section delivers up to 618 V floating supply with 125 Ω typical R_DS(on), supporting switching frequencies up to 400 kHz with 1 nF load.

Key Specifications

Pinout & Package

Package: SO8 (Small Outline Integrated Circuit, 150 mil width), tape-and-reel format per JEDEC MS-012.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211D, the L6388D013TR uniquely combines integrated bootstrap diode, hardware interlock, and ±50 V/ns dV/dt immunity - reducing component count and improving noise resilience in space-constrained industrial inverters.

Availability

L6388D013TR is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC switch-mode power supplies, and solar microinverters requiring stable component supply, long-term lifecycle support, and SO8 tape-and-reel packaging for SMT production.

Supply support for L6388D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6388 belongs to ST's high-voltage gate driver product line, engineered specifically for robust, cost-effective half-bridge control in off-line power conversion and motor control systems operating up to 600 V.

FAQ

What is the maximum allowable V_BOOT voltage for the L6388D013TR?

The absolute maximum V_BOOT voltage is 618 V, defined as V_BOOT = V_OUT + 17 V (per Table 5). This limit ensures safe operation of the internal bootstrap driver DMOS and prevents breakdown when driving high-side switches referenced to 600 V rails. Exceeding this value risks permanent damage to the internal charge pump structure.

Can the L6388D013TR drive SiC MOSFETs?

Yes - its 400 mA source / 650 mA sink drive strength, 70/40 ns switching times into 1 nF, and ±50 V/ns dV/dt immunity make it suitable for driving low-to-mid gate-charge SiC MOSFETs (e.g., <25 nC Q_g). However, external gate resistors may be needed to dampen ringing, and C_BOOT must be sized to sustain V_BOOT under high-frequency, high-duty-cycle conditions.

Does the L6388D013TR require an external bootstrap capacitor?

Yes - an external bootstrap capacitor (C_BOOT) is mandatory. The internal DMOS-diode charges it during LVG conduction; typical values range from 100 nF to 1 µF depending on gate charge, switching frequency, and duty cycle. For example, with 30 nC Q_g and 5 ms high-side on-time, ≥1 µF is recommended to limit voltage droop to <1 V.

How does the interlocking function prevent shoot-through?

The interlock circuit forces a minimum dead time (220–420 ns) between HVG and LVG transitions by holding one output inactive until the other has fully turned off. This hardware-level enforcement - independent of input timing - eliminates race conditions that could cause simultaneous conduction and destructive shoot-through current in the half-bridge power stage.