STMicroelectronics L6388ED013TR

Overview

L6388ED013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs and IGBTs in high-side/low-side configurations. It supports up to 600 V rail voltage, delivers 400 mA source / 650 mA sink output current, features integrated bootstrap diode and interlocking/deadtime protection, and operates with 3.3 V/5 V/15 V CMOS/TTL logic inputs - used in motor drives for HVAC compressors and induction heating systems.

For engineers reviewing the L6388ED013TR datasheet, L6388ED013TR pinout, L6388ED013TR application, or L6388ED013TR equivalent, key selection criteria include dV/dt immunity (±50 V/ns), UVLO thresholds on both VCC and VBOOT, switching times (70/40 ns rise/fall into 1 nF), SO-8 package thermal resistance (150 °C/W), and bootstrap driver R_DS(on) (125 Ω).

Technical Context

The L6388ED013TR implements dual independent drivers with interlocked logic and programmable deadtime (220–420 ns) to prevent shoot-through in half-bridge topologies. Its high-side section floats up to 600 V referenced to VOUT and uses an internal bootstrap DMOS structure (not external diode) with synchronous LVG-controlled charging.

Input logic includes hysteresis and pull-down on LIN/HIN pins, supporting 3.3 V, 5 V, and 15 V logic levels. UVLO protection is implemented separately on VCC (9.1–10.1 V turn-on, 7.9–8.8 V turn-off) and VBOOT (8.5–10.5 V turn-on, 7.2–9.2 V turn-off), each with 0.9 V hysteresis.

Key Specifications

Pinout & Package

Available in SO-8 package (ECOPACK® compliant), 5.00 mm × 6.00 mm footprint, 1.25 mm height, with 1.27 mm pitch; thermal resistance R_th(JA) = 150 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211D, the L6388ED013TR uniquely integrates bootstrap diode, interlock, and dual UVLO in SO-8 - reducing component count and improving reliability in cost-constrained, self-booted motor drive applications.

Availability

L6388ED013TR is available at Aetrix Electronics and suitable for HVAC compressor controls, induction heating modules, industrial AC motor drives, and resonant SMPS requiring stable component supply across extended production lifecycles.

Supply support for L6388ED013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The L6388E belongs to ST's high-voltage gate driver product line, engineered specifically for robust half-bridge control in motor drives and resonant converters where integration, noise immunity, and bootstrap simplicity are critical.

FAQ

What is the maximum recommended switching frequency for L6388ED013TR?

The datasheet specifies 400 kHz as the maximum switching frequency under recommended operating conditions with 1 nF load. This limit arises from combined effects of propagation delays (≤300 ns), deadtime (≤420 ns), and thermal dissipation constraints in SO-8 package (R_th(JA) = 150 °C/W). At higher frequencies, bootstrap capacitor recharge time and junction temperature must be validated per application.

Can L6388ED013TR drive SiC MOSFETs?

Yes - its 600 V rail rating, 400 mA source/650 mA sink capability, and 70/40 ns switching times meet requirements for common 650 V SiC MOSFETs (e.g., 3–5 nF total gate charge). However, gate resistor selection must account for higher dI/dt; the internal bootstrap DMOS R_DS(on) (125 Ω) may require larger C_BOOT to maintain V_BOOT stability at >200 kHz.

Is external bootstrap diode required when using L6388ED013TR?

No - the L6388ED013TR integrates a patented bootstrap DMOS+diode structure that replaces the external fast-recovery diode. This reduces BOM count, PCB area, and leakage-related voltage droop. An external diode is only needed if V_OUT remains elevated for extended periods (>5 ms) or if C_BOOT recharge time is insufficient due to short LVG ON time.

How does the interlocking function differ from deadtime in L6388ED013TR?

Interlocking is hardware-level logic that prevents both HIN and LIN from enabling their respective outputs simultaneously - a hard safety feature. Deadtime is a programmable delay (220–420 ns) inserted after one output turns off before the other can turn on, preventing overlap during transitions. Both operate independently: interlock blocks concurrent activation; deadtime manages sequential timing to avoid shoot-through during switching edges.