STMicroelectronics L6389EDTR

Overview

L6389EDTR from STMicroelectronics is a high-voltage half-bridge gate driver IC designed to control power MOSFETs and IGBTs in high-side/low-side configurations. It supports up to 600 V rail voltage, delivers 400 mA source / 650 mA sink output current, features integrated bootstrap diode and interlocking/deadtime protection, and operates with 3.3 V/5 V/15 V CMOS/TTL inputs - used in motor drives for PMAC and induction heating systems.

For engineers reviewing the L6389EDTR datasheet, L6389EDTR pinout, L6389EDTR application, or L6389EDTR equivalent, key selection criteria include dV/dt immunity (±50 V/ns), UVLO thresholds on both VCC and VBOOT, SO-8 package thermal resistance (150 °C/W), and bootstrap driver R_DS(on) (125 Ω).

Technical Context

The L6389EDTR implements dual-channel, non-inverting gate drive logic with hardware-enforced interlocking and programmable deadtime (325–615 ns) to prevent shoot-through in half-bridge topologies. Its floating high-side section uses BCD™ "offline" process technology and integrates a synchronous bootstrap driver replacing external fast-recovery diodes.

Input logic accepts 3.3 V/5 V/15 V CMOS/TTL levels with hysteresis and internal pull-down resistors (~750 kΩ). UVLO protection is independently implemented on VCC (9.6 V turn-on, 8.3 V turn-off) and VBOOT (9.5 V turn-on, 8.2 V turn-off), each with 0.9 V hysteresis, ensuring robust operation during supply transients.

Key Specifications

Pinout & Package

The L6389EDTR is housed in an SO-8 surface-mount package (ECOPACK® compliant) with standard 1.27 mm pitch, 150 °C/W junction-to-ambient thermal resistance, and 8-pin layout optimized for half-bridge gate drive routing and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2104PbF and UCC27201D, the L6389EDTR uniquely combines integrated bootstrap diode, hardware interlock, and dual UVLO in SO-8 - offering superior system-level safety and reduced external component count for industrial motor drives operating up to 125 °C ambient.

Availability

L6389EDTR is available at Aetrix Electronics and suitable for motor drivers, induction heating systems, and industrial power supplies requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for L6389EDTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, mixed-signal, power, and microcontroller products for industrial, automotive, and consumer markets.

The L6389EDTR belongs to ST's high-voltage gate driver product line, engineered specifically for robust half-bridge control in harsh industrial environments - emphasizing dV/dt immunity, integrated protection, and thermal resilience.

FAQ

What is the purpose of the interlocking function in the L6389EDTR?

The interlocking function prevents simultaneous activation of HVG and LVG outputs by forcing both to low when HIN and LIN are high concurrently. This hardware-level protection eliminates shoot-through risk in half-bridge circuits regardless of input timing skew or controller firmware errors, enhancing system safety without software overhead.

Can the L6389EDTR drive SiC MOSFETs effectively?

The L6389EDTR can drive low-to-mid power SiC MOSFETs (Q_g ≤ 30 nC) at ≤200 kHz due to its 400 mA source/650 mA sink capability and 70/40 ns rise/fall times into 1 nF. However, for >500 kHz or high-Q_g (>50 nC) SiC devices, its drive strength and lack of active Miller clamp limit performance versus dedicated SiC drivers.

How does the integrated bootstrap driver affect C_BOOT selection?

The integrated bootstrap DMOS (R_DS(on) = 125 Ω) introduces a voltage drop proportional to Q_gate/T_charge. For a 30 nC MOSFET gate driven with 5 µs LVG ON time, the drop is ~0.8 V - requiring C_BOOT ≥ 10× C_EXT to limit total droop to <300 mV. External diode bypass is recommended if T_charge is insufficient.

Is the L6389EDTR RoHS and REACH compliant?

Yes, the L6389EDTR is manufactured in ST's ECOPACK®-compliant SO-8 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full material declarations and compliance documentation are available through ST's official product page and authorized distribution channels.