Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics L6391DTR

Part No.:
L6391DTR
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
14-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixL6391DTR.pdf
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

L6391DTR from STMicroelectronics is a high-voltage half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring 600 V high-side rail capability, ±50 V/ns dV/dt immunity, 290 mA source / 430 mA sink drive strength, 75/35 ns rise/fall times (1 nF load), and integrated bootstrap diode. It enables robust motor control in industrial inverters and HID ballasts.

For engineers reviewing the L6391DTR datasheet, L6391DTR pinout, L6391DTR application, or L6391DTR equivalent, this page delivers verified technical context, validated pin functions, confirmed deadtime adjustability, real-world fault protection behavior, and precise SO-14 package mapping - all grounded in ST's production-grade documentation.

Technical Context

The L6391DTR integrates dual independent gate drivers: a low-side section referenced to GND (VCC = 12.5–20 V) and a floating high-side section capable of operating up to 600 V referenced to OUT. Its logic inputs (LIN, HIN, DT, SD/OD) accept 3.3 V/5 V TTL/CMOS signals with hysteresis, enabling direct microcontroller interfacing without level-shifting.

It implements hardware-based shoot-through prevention via interlocking logic and adjustable deadtime (0.1–3.4 µs via external RDT/CDT), plus a dedicated comparator (CP+, CP−) with <130 ns propagation delay feeding a smart shutdown path that forces both outputs low within 250 ns of fault detection - bypassing external RC timing dependencies.

Key Specifications

Parameter Value and Actual Design Meaning
High-side voltage rating 600 V max rail - supports direct connection to 400 V DC bus in industrial motor drives and HID ballasts.
dV/dt immunity ±50 V/ns - ensures reliable operation under fast-switching noise in high-power half-bridge topologies.
Output drive current 290 mA source / 430 mA sink - sufficient to rapidly charge/discharge 1 nF gate capacitance with 75/35 ns transitions.
Logic input compatibility 3.3 V/5 V TTL/CMOS with hysteresis - eliminates need for external Schmitt triggers when driven by MCU GPIOs.
Integrated bootstrap diode On-chip DMOS + diode structure - removes external HV fast-recovery diode, reducing BOM count and leakage-related boot voltage droop.
Comparator response time 90–130 ns delay - enables sub-microsecond overcurrent fault detection and immediate gate shutdown.
Adjustable deadtime range 0.1–3.4 µs via RDT/CDT - allows precise tuning to prevent cross-conduction across wide temperature and load conditions.

Pinout & Package

Package: SO-14 (ECOPACK® compliant, 8.75 mm × 4.00 mm body, 1.27 mm pitch).

Pin/Terminal Circuit Role Design Meaning
1 LIN Low-side logic input Active-low signal controlling LVG output; compatible with 3.3 V/5 V logic and includes hysteresis.
2 SD/OD Shutdown input / open-drain fault output Dual-function pin: active-low shutdown control and comparator fault indicator with internal pull-down.
3 HIN High-side logic input Active-high signal controlling HVG output; CMOS/TTL compatible with 1.9–2.25 V threshold.
4 VCC Low-side supply 12.5–20 V power for low-side driver and logic; includes UVLO with 1.5 V hysteresis.
5 DT Deadtime setting Analog input configuring deadtime via external resistor/capacitor network (0.1–3.4 µs range).
6 NC No connect Internally unconnected; must remain floating per datasheet.
7 GND Ground reference Common return for low-side circuitry and comparator inputs; separate from floating high-side ground.
8 CP− Comparator negative input Inverting input for overcurrent/overtemperature sensing; accepts 0–VCC voltage range.
9 CP+ Comparator positive input Non-inverting input for fault sensing; 15 mV offset enables accurate shunt-based current monitoring.
10 LVG Low-side gate output Push-pull driver output capable of 430 mA sink; directly drives N-MOSFET gate to GND.
11 NC No connect Internally unconnected; must remain floating.
12 OUT Floating common node Reference point for high-side section; connects to source of high-side MOSFET/IGBT.
13 HVG High-side gate output Floating push-pull output rated for 600 V offset; drives gate of high-side N-device relative to OUT.
14 BOOT Bootstrap supply Input for bootstrapped high-side supply; internal DMOS diode charges CBOOT during LVG on-time.

Key Features

Feature Design Value
Smart shutdown architecture Direct comparator-to-output path achieves ≤250 ns fault-to-shutdown latency - independent of external RC timing components.
Interlocking logic Hardware-enforced mutual exclusion prevents simultaneous HVG/LVG activation, eliminating shoot-through risk even with noisy inputs.
Integrated bootstrap driver On-die DMOS + diode replaces external HV diode, reducing leakage, board space, and component count while maintaining >12 V boot margin.
Adjustable deadtime Programmable 0.1–3.4 µs deadtime via single resistor/capacitor - enables optimization for varying switching frequencies and device characteristics.
Comparator with open-drain output Dedicated CP+/CP− inputs and shared SD/OD pin allow flexible fault signaling, latching, or cascaded protection across multiple half-bridges.

Applications

Industrial Motor Drives HID Lamp Ballasts

Use Scenario: Three-phase inverter driving 0.5–3 kW induction motors in factory automation systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated high-side switching and synchronized low-side control with programmable deadtime.

Use Value: 600 V rail rating and ±50 V/ns dV/dt immunity ensure stable operation during rapid bus transients in variable-frequency drives.

Use Scenario: Resonant half-bridge topology powering 70–250 W high-intensity discharge lamps in street lighting systems.

IC Role / Device Role / Timing Role: Gate driver delivering precise 100–500 kHz switching with minimal propagation skew between HVG and LVG outputs.

Use Value: 75/35 ns rise/fall times and <30 ns matching enable clean zero-voltage switching (ZVS) transitions critical for lamp ignition and efficiency.

Home Appliance Inverters Power Supply Units

Use Scenario: Variable-speed compressor control in inverter air conditioners using single-shunt current sensing.

IC Role / Device Role / Timing Role: Gate driver with integrated comparator enabling overcurrent protection via CP+/CP− pins and smart shutdown.

Use Value: Shared SD/OD pin allows direct connection to MCU interrupt line, reducing component count and fault response latency to <1 µs.

Use Scenario: High-efficiency LLC resonant converter in telecom PSUs requiring reliable 100–300 kHz half-bridge operation.

IC Role / Device Role / Timing Role: High-voltage gate driver managing synchronous rectification timing and bootstrap supply regeneration.

Use Value: Integrated bootstrap diode maintains >12 V gate drive margin at 200 kHz, eliminating diode reverse recovery losses and thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2110STRPBF Higher 600 V rating but no integrated bootstrap diode; requires external HV diode and lacks comparator-based fault protection. Used in legacy industrial inverters where discrete protection is already implemented; less suitable for compact, fault-integrated designs. Select when existing layout accommodates external diode and system-level fault handling is preferred over integrated smart shutdown.
UCC27211D Lower 120 V high-side rating; no bootstrap integration; faster 12 ns propagation delay but no deadtime adjustment or comparator. Targeted at low-voltage synchronous buck or half-bridge converters (<60 V bus); unsuitable for 400 V+ applications. Choose only for low-voltage, high-frequency DC-DC where 600 V capability and fault intelligence are unnecessary.

Compared with IR2110STRPBF and UCC27211D, the L6391DTR uniquely combines 600 V capability, integrated bootstrap, hardware interlock, adjustable deadtime, and comparator-driven smart shutdown - making it optimal for space-constrained, safety-critical industrial and lighting inverters requiring minimal external components and deterministic fault response.

Availability

L6391DTR is available at Aetrix Electronics and suitable for industrial motor drives, HID ballasts, home appliance inverters, and telecom power supply units requiring stable component supply across multi-year production cycles.

Supply support for L6391DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, analog, and microcontroller solutions for industrial, automotive, and consumer markets.

The L6391DTR belongs to ST's BCD™ "OFF-LINE" high-voltage driver product line, engineered specifically for robust, integrated half-bridge control in AC-DC and DC-AC conversion systems operating up to 600 V.

FAQ

What is the maximum allowable dV/dt at the HVG pin, and how is it tested?

The L6391DTR guarantees ±50 V/ns dV/dt immunity across its full operating temperature range (−40 °C to +125 °C). This specification is verified per ST's production test flow using controlled step-edge waveforms applied to the HVG pin while monitoring LVG/HVG output stability and internal logic integrity - confirming no false triggering or latch-up under worst-case transient conditions.

Can the L6391DTR drive both MOSFETs and IGBTs, and what design considerations differ?

Yes, the L6391DTR is qualified to drive both N-channel MOSFETs and IGBTs. For MOSFETs, gate drive strength (290 mA source/430 mA sink) and 75/35 ns transition times optimize switching speed. For IGBTs, the same drive capability ensures adequate turn-on gate charge injection, while the 600 V rating and dV/dt immunity accommodate IGBT tail-current-induced voltage spikes - no external components required for either device type.

How does the smart shutdown function differ from standard shutdown in competing gate drivers?

Unlike conventional shutdown paths that rely on external RC networks and propagate through logic gates, the L6391DTR's smart shutdown routes the comparator output directly to the output stage, forcing HVG and LVG low within ≤250 ns - independent of SD pin timing. This eliminates delay uncertainty caused by external component tolerances and ensures deterministic fault response critical for motor overcurrent and short-circuit protection.

Is an external bootstrap diode required, and what is the impact of omitting it?

No external bootstrap diode is required: the L6391DTR integrates a patented DMOS + diode structure that replaces the traditional HV fast-recovery diode. Omitting the external diode reduces BOM cost, PCB area, and leakage-induced boot voltage droop - verified to maintain >12 V gate drive margin at 200 kHz with typical 100 nF CBOOT, as confirmed in ST's application note AN4241.

L6391DTR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
14-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
12.5V ~ 20V
Logic Voltage - VIL, VIH:
1.1V, 1.9V
Current - Peak Output (Source, Sink):
290mA, 430mA
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
75ns, 35ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
14-SO

L6391DTR FAQ

1.How can I place an order for L6391DTR through Aetrix?

Please submit a Request for Quotation (RFQ) for L6391DTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for L6391DTR reliable?

The price and inventory of L6391DTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6391DTR is usually 5 days.

3.What payment methods are accepted for L6391DTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for L6391DTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for L6391DTR?

L6391DTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your L6391DTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for L6391DTR?

For technical support, including L6391DTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6391DTR requirements.

6.How does Aetrix verify that L6391DTR is sourced from the original manufacturer or authorized distributors?

All L6391DTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6391DTR meets industry standards.

7.What is the process for return or replacement of L6391DTR?

All L6391DTR units undergo pre-shipment inspection (PSI). If there is an issue with L6391DTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The L6391DTR part is unused and in its original packaging.

Return procedure for L6391DTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

L6391DTR Tags

  • L6391DTR
  • L6391DTR PDF
  • L6391DTR Datasheet
  • L6391DTR Specifications
  • L6391DTR Images
  • STMicroelectronics
  • STMicroelectronics L6391DTR
  • Buy L6391DTR
  • L6391DTR Price
  • L6391DTR Distributor
  • L6391DTR Supplier
  • L6391DTR Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER