STMicroelectronics L6395DTR

Overview

L6395DTR from STMicroelectronics is a high-voltage, dual-channel gate driver IC for N-channel MOSFETs and IGBTs in half-bridge configurations. It integrates high-side (floating) and low-side drivers with 600 V rail capability, ±50 V/ns dV/dt immunity, and 290 mA source / 430 mA sink output current. Used in motor control stages of home appliance inverters.

For engineers reviewing the L6395DTR datasheet, L6395DTR pinout, L6395DTR application, or L6395DTR equivalent, key selection criteria include bootstrap-enabled high-side drive, TTL/CMOS-compatible 3.3 V/5 V inputs with hysteresis, integrated bootstrap diode, UV protection on both VCC and BOOT rails, and SO-8 package thermal performance.

Technical Context

The L6395DTR implements a level-shifting architecture to drive the high-side gate referenced to a floating output node (OUT), enabling operation up to 600 V. Its internal bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS switch with 120 Ω R_DS(on), reducing BOM count and leakage.

Logic inputs (LIN/HIN) feature hysteresis (0.6–0.8 V) and operate down to 3.3 V, ensuring robust interfacing with microcontrollers. Undervoltage lockout is independently implemented on VCC (9.5 V turn-on threshold) and BOOT (8.6 V turn-on threshold), preventing erratic switching during supply transients.

Key Specifications

Pinout & Package

Package: SO-8 (ECOPACK® compliant, surface-mount, 150 °C/W junction-to-ambient thermal resistance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2104STRPBF and UCC27211D, the L6395DTR uniquely combines 600 V capability, integrated bootstrap diode, dual-rail UVLO, and SO-8 packaging-enabling simpler, more robust high-voltage half-bridge designs without external level shifters or diodes.

Availability

L6395DTR is available at Aetrix Electronics and suitable for home appliance motor control, industrial fan inverters, and factory automation conveyor drives requiring stable component supply across multi-year production cycles.

Supply support for L6395DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The L6395DTR belongs to ST's BCD™ "offline" high-voltage driver product line, engineered specifically for robust, integrated gate driving in AC-DC and DC-AC power conversion systems up to 600 V.

FAQ

Can L6395DTR drive IGBTs directly?

Yes. The L6395DTR is explicitly specified for N-channel power MOSFETs and IGBTs. Its 430 mA sink current and 290 mA source current meet typical IGBT gate drive requirements for devices up to 100 A, and its 600 V high-side rating supports standard industrial IGBT modules. No external buffer is required for most medium-power IGBTs.

What is the minimum recommended C_BOOT value for 20 kHz operation?

For 20 kHz switching with a 30 nC gate charge MOSFET and 10 V gate drive, ST recommends ≥100 nF C_BOOT. This ensures ≤300 mV voltage drop per cycle, staying within the 8.6 V BOOT UVLO turn-on threshold. Larger values (e.g., 220 nF) improve margin for extended conduction periods or higher gate charges.

Does L6395DTR require external pull-down resistors on LIN/HIN inputs?

No. LIN and HIN inputs have built-in hysteresis and CMOS-compatible thresholds (V_IL = 1.1 V max, V_IH = 1.9 V min), eliminating the need for external pull-downs. However, if left unconnected, they must be tied to GND or VCC to prevent floating states - no passive termination is required for noise immunity.

How does the internal bootstrap driver behave during startup?

At power-on, the internal bootstrap driver activates only after LVG turns on and OUT is near GND, enabling charge transfer to C_BOOT through the integrated DMOS. Startup is guaranteed if the first PWM cycle includes sufficient low-side conduction time (>5 µs typical) to charge C_BOOT to >8.6 V before high-side activation.