STMicroelectronics L6494LDTR

Overview

L6494LDTR from STMicroelectronics is a high-voltage, single-chip half-bridge gate driver for N-channel MOSFETs and IGBTs, featuring 2 A source / 2.5 A sink peak output current, 85 ns propagation delay, ±50 V/ns dV/dt immunity, integrated bootstrap diode, and programmable deadtime via external resistor. It operates with 3.3 V/5 V TTL/CMOS logic inputs and supports motor drives in industrial automation and UPS systems.

For engineers reviewing the L6494LDTR datasheet, L6494LDTR pinout, L6494LDTR application, or L6494LDTR equivalent, key selection criteria include high-side floating capability up to 500 V DC (600 V transient), independent UVLO on both high- and low-side sections, SO-14 compact layout advantages, and bootstrap diode integration reducing BOM count.

Technical Context

The L6494LDTR implements a dual-section architecture: a grounded low-side driver supplied by VCC (10–20 V) and a floating high-side driver powered via bootstrapped VBOOT (9.3–20 V referenced to OUT), enabling operation with VOUT up to 480 V DC. Its single-input logic interface (IN) controls complementary HVG/LVG outputs with active-low shutdown (SD) and adjustable deadtime (DT pin).

UVLO protection is independently implemented on both sections-VCC UVLO thresholds are 8.7 V turn-on / 8.2 V turn-off, while VBOOT UVLO thresholds are 8.6 V turn-on / 8.0 V turn-off-ensuring safe gate drive only within valid supply ranges. The integrated bootstrap DMOS (RDS(on) = 175 Ω typ.) replaces external fast-recovery diodes but requires sufficient LVG-on time for CBOOT recharge.

Key Specifications

Pinout & Package

Package: SO-14 (ECOPACK® compliant), 8.55–8.75 mm × 3.80–4.00 mm body, 1.27 mm pitch, Rth(JA) = 120 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844STRPBF and UCC27211D, the L6494LDTR uniquely combines integrated bootstrap diode, dual UVLO, programmable deadtime, and 2.5 A sink in a single SO-14 package-reducing component count and improving reliability in industrial motor and UPS applications where robustness and layout simplicity are critical.

Availability

L6494LDTR is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, HID ballasts, and induction heating systems requiring stable component supply, long-term lifecycle support, and ECOPACK-compliant packaging.

Supply support for L6494LDTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The L6494LDTR belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact, and BOM-efficient half-bridge control in industrial power conversion systems operating up to 480 V DC.

FAQ

What is the maximum allowable voltage on the OUT pin?

The OUT pin supports a DC voltage of up to 480 V referenced to SGND, with transient withstand capability of 600 V for pulses less than 1 ms. This rating is validated per absolute maximum specifications and enables use in 400 V AC rectified bus applications. Operation beyond these limits risks permanent damage to the high-side floating section.

Can the L6494LDTR drive SiC MOSFETs?

The L6494LDTR can drive discrete SiC MOSFETs provided gate voltage requirements (typically 15–20 V) fall within its VBOOT range (9.3–20 V) and gate charge does not exceed drive capability. However, its 25 ns rise/fall times and 2.5 A sink are optimized for silicon IGBTs/MOSFETs-not ultra-fast SiC devices requiring sub-10 ns transitions or >5 A peak current.

Is an external bootstrap diode ever required?

An external bootstrap diode is optional and only recommended when CBOOT recharge time is insufficient-e.g., in high-duty-cycle or low-frequency applications where LVG-on time is too short for the internal DMOS to fully charge CBOOT. The integrated DMOS eliminates it in most standard motor drive and UPS configurations.

How is deadtime adjusted, and what is the minimum achievable value?

Deadtime is set by connecting a resistor (RDT) between DT pin and SGND. Minimum deadtime is 0.34 μs (typ.) with RDT = 0 Ω, verified across temperature and load. The relationship follows RDT ≈ 43.86·DT − 19.30 (kΩ), allowing precise tuning without additional ICs or digital controllers.