STMicroelectronics L6498D

Overview

L6498D from STMicroelectronics is a high-voltage half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring 600 V transient withstand voltage, ±50 V/ns dV/dt immunity, and 2 A source / 2.5 A sink peak output current. It integrates bootstrap diode, interlocking logic, and independent UVLO on both high-side and low-side sections, enabling robust motor drive and inverter applications up to 480 V DC bus.

For engineers reviewing the L6498D datasheet, L6498D pinout, L6498D application, or L6498D equivalent, key selection criteria include propagation delay (85 ns), rise/fall time (25 ns with 1 nF load), TTL/CMOS-compatible 3.3 V–5 V inputs with hysteresis, SO-8 package thermal resistance (185 °C/W), and dual UVLO thresholds (VCC: 8.7 V ON / 8.2 V OFF; VBO: 8.6 V ON / 8.0 V OFF).

Technical Context

The L6498D implements a BCD6 "OFF-LINE" process-based half-bridge driver with floating high-side section rated for 500 V DC and 600 V transient operation. Its interlocking function prevents simultaneous high-side and low-side output activation, eliminating shoot-through risk without external logic.

It uses integrated bootstrap diode structure (R_DS(on) = 175 Ω typ.) to charge the BOOT capacitor during low-side conduction, supporting high-side operation without external fast-recovery diodes. UVLO circuits independently monitor VCC (low-side supply) and VBO = VBOOT − VOUT (high-side floating supply), each with 0.6 V hysteresis and temperature-stable thresholds.

Key Specifications

Pinout & Package

The L6498D is housed in a compact SO-8 surface-mount package (ECOPACK® compliant), with 1.27 mm pitch, 4.9 mm × 6.0 mm body, and exposed pad not present. Pin 1 is marked by notch or dot; top-view orientation follows JEDEC MS-012.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104S and UCC27211D, the L6498D uniquely combines 600 V transient rating, integrated bootstrap diode, and interlocking logic in SO-8 - making it optimal for cost-sensitive, space-constrained 480 V industrial inverters where reliability and BOM reduction are critical.

Availability

L6498D is available at Aetrix Electronics and suitable for motor drives, HID ballasts, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and ECOPACK®-compliant packaging.

Supply support for L6498D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The L6498D belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact, and cost-efficient half-bridge control in 400–600 V industrial power conversion systems.

FAQ

What is the maximum recommended switching frequency for the L6498D?

The L6498D supports up to 800 kHz maximum switching frequency when driving a 1 nF capacitive load, as specified in the recommended operating conditions. This limit arises from combined propagation delay (85 ns), rise/fall times (25 ns), and interlocking overhead. For reliable operation above 500 kHz, layout must minimize parasitic inductance on BOOT, OUT, and gate traces to avoid ringing-induced false triggering.

Can the L6498D drive SiC MOSFETs?

The L6498D can drive discrete SiC MOSFETs rated ≤600 V, provided gate resistor values are selected to limit dV/dt to ≤50 V/ns and gate loop inductance is minimized. Its 2.5 A sink capability supports typical SiC Q_g values up to ~25 nC, but the absence of negative turn-off voltage means external Miller clamp or gate resistors must prevent spurious turn-on in high-dV/dt environments.

How does the integrated bootstrap diode affect C_BOOT sizing?

The integrated bootstrap diode's R_DS(on) (175 Ω typ.) introduces voltage drop during C_BOOT charging, calculated as V_drop ≈ (Q_gate/T_charge) × R_DS(on). For a 30 nC MOSFET and 5 µs charging window, drop is ~1 V - requiring C_BOOT ≥100 nF to maintain V_BO >8.6 V after droop. External diodes eliminate this loss but add leakage and footprint.

Is the L6498D pin-compatible with earlier L6498 variants?

Yes - the L6498D (SO-8) shares identical pinout, electrical characteristics, and functional behavior with the original L6498 in SO-8 package. Differences are limited to minor process enhancements and updated thermal data; no PCB redesign or firmware change is required for drop-in replacement in existing designs.