STMicroelectronics L6498L

Overview

L6498L from STMicroelectronics is a high-voltage half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring 600 V transient withstand voltage, ±50 V/ns dV/dt immunity, and 2 A source / 2.5 A sink output current at 25 °C. It integrates bootstrap diode, interlocking logic, and independent UVLO on both high- and low-side sections, enabling robust motor drive and inverter applications up to 480 V DC bus.

For engineers reviewing the L6498L datasheet, L6498L pinout, L6498L application, or L6498L equivalent, key selection criteria include propagation delay (85 ns), rise/fall time (25 ns with 1 nF load), TTL/CMOS-compatible 3.3 V/5 V inputs with hysteresis, SO-14 package thermal resistance (120 °C/W), and dual UVLO thresholds (VCC: 8.7 V turn-on, VBO: 8.6 V turn-on).

Technical Context

The L6498L implements a BCD6 "OFF-LINE" monolithic process to integrate high-side floating driver circuitry capable of operating with VOUT up to 480 V DC and transient tolerance to 600 V. Its interlocking function prevents simultaneous high-side and low-side output activation, eliminating shoot-through risk in half-bridge topologies.

It uses separate supply domains: VCC powers the low-side section and logic, while BOOT–OUT supplies the high-side driver. UVLO protection is independently implemented on both domains (VCC_thON = 9.3 V typ., VBO_thON = 8.6 V typ.), and the integrated bootstrap diode (RDS(on) = 175 Ω typ.) replaces external fast-recovery diodes to reduce BOM count and leakage-related voltage drop.

Key Specifications

Pinout & Package

The L6498L is available in SO-14 package (ECOPACK® compliant), with exposed pad for enhanced thermal performance. Pin assignment is validated per STMicroelectronics DocID030318 Rev 3, Figure 4 and Table 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPBF and UCC27211D, the L6498L uniquely combines integrated bootstrap diode, 600 V transient rating, and dual independent UVLO-making it optimal for industrial 400 V+ half-bridge systems where reliability, BOM reduction, and thermal simplicity are critical.

Availability

L6498L is available at Aetrix Electronics and suitable for industrial inverters, HID ballasts, UPS DC-DC converters, and induction heating systems requiring stable component supply across extended production lifecycles.

Supply support for L6498L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6498L belongs to ST's high-voltage gate driver product line, engineered specifically for robust, compact, and BOM-efficient half-bridge control in industrial motor drives, lighting, and power conversion systems operating up to 480 V DC.

FAQ

What is the maximum recommended switching frequency for the L6498L?

The L6498L supports up to 800 kHz maximum switching frequency when driving a 1 nF capacitive load, as specified in the recommended operating conditions table. This limit assumes adequate thermal management (TJ ≤ 125 °C) and stable bootstrap capacitor charging; actual usable frequency depends on MOSFET gate charge, CBOOT value, and layout parasitics.

Can the L6498L drive SiC MOSFETs effectively?

Yes-the L6498L's 2.5 A sink current, 25 ns rise/fall times, and 85 ns propagation delay meet typical SiC MOSFET gate drive requirements for 1200 V/30–50 A devices. However, users must verify bootstrap capacitor sizing and UVLO thresholds against SiC gate threshold voltage and required VGS swing (e.g., −5 V/20 V).

Is an external bootstrap diode ever required with the L6498L?

An external diode is optional but recommended when CBOOT charging time is insufficient (e.g., in high-duty-cycle or low-frequency applications), or when the internal DMOS RDS(on) causes excessive voltage drop (>300 mV). The datasheet provides equations to evaluate this based on Qg, Tcharge, and RDS(on) = 175 Ω.

How does the interlocking function operate in the L6498L?

The interlock is hardware-based: asserting both HIN and LIN high simultaneously forces LVG low and holds HVG low until one input returns low. This prevents shoot-through without software or external logic, and is confirmed by the truth table (Table 6) showing "L(1)" output state under dual-high input condition.