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STMicroelectronics L6569AD013TR

Part No.:
L6569AD013TR
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixL6569AD013TR.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,239

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Product details

Overview

L6569AD013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC with integrated oscillator, designed for driving external N-channel MOSFETs and IGBTs in resonant lamp ballast and SMPS applications. It features 600V high-side rail capability, 1.25µs typ. dead time, ±50V/ns dV/dt immunity, internal bootstrap diode structure, and programmable oscillator frequency (200 kHz max) via external RF/CF.

For engineers reviewing the L6569AD013TR datasheet, L6569AD013TR pinout, L6569AD013TR application, or L6569AD013TR equivalent, key selection criteria include bootstrap LDMOS RON (120 Ω), UVLO thresholds (9 V turn-on / 8 V turn-off), sink/source drive strength (270 mA / 170 mA), and SO8 package compatibility with CFL ballast reference designs.

Technical Context

The L6569AD013TR integrates a charge-pump–driven high-voltage level shifter and patented synchronous bootstrap LDMOS (RON = 120 Ω typ.) that replaces the external bootstrap diode. Its oscillator uses RF/CF to set frequency (e.g., 60 kHz at RF = 12 kΩ, CF = 1 nF), with CF pin supporting external logic override.

Internal logic enforces 0.85–1.65 µs dead time to prevent shoot-through; VS pin includes 15.6 V zener clamp (IS = 5 mA); startup current is 150 µA typ. Under-voltage lockout has 1 V hysteresis, and dV/dt immunity is validated to ±50 V/ns on BOOT/OUT pins.

Key Specifications

Parameter Value and Actual Design Meaning
High-side voltage rating 600 V max floating supply (VBOOT), enabling direct interface with 400–500 V DC bus topologies
Oscillator frequency range 200 kHz max programmable via RF/CF; 60 kHz typical at RF=12 kΩ/CF=1 nF - sets resonant tank timing
Driver output current 270 mA sink / 170 mA source per channel - sufficient to drive gate charge of STD2NB50-1 MOSFETs in 18 W CFL ballasts
Dead time 1.25 µs typ. (0.85–1.65 µs over temp) - ensures safe commutation in half-bridge configurations without external timing
Bootstrap LDMOS RON 120 Ω typ. - defines minimum bootstrap capacitor charging time constant (TC ≈ 1.1 × RF × CF)
VS UVLO threshold 9 V turn-on / 8 V turn-off (1 V hysteresis) - prevents erratic operation during brown-out or soft-start conditions
dV/dt immunity ±50 V/ns on BOOT/OUT pins - sustains reliable level-shifting under fast-switching noise in high-power inverters

Pinout & Package

SO8 package (standard minidip footprint, 1.27 mm pitch), thermally rated to 150 °C junction temperature with Rth j-amb = 150 °C/W.

Pin/Terminal Circuit Role Design Meaning
1 (VS) Low-side supply input with internal 15.6 V zener clamp Provides bias for low-side driver and oscillator; clamps transients to protect internal circuitry
2 (RF) Oscillator timing resistor connection Sinks/sources current to set oscillator frequency; can also drive secondary ICs (e.g., second L6569 for full H-bridge)
3 (CF) Oscillator timing capacitor / external logic input Capacitor-to-GND sets frequency; logic-low forces shutdown (low-side ON, high-side OFF)
4 (GND) Power and signal reference ground Common return for low-side driver, oscillator, and bias regulator
5 (LVG) Low-side gate driver output Drives gate of lower N-MOSFET/IGBT; 170 mA source / 270 mA sink capability
6 (OUT) High-side floating reference (source node) Connects to source of upper power device; serves as return path for high-side driver
7 (HVG) High-side gate driver output Drives gate of upper N-MOSFET/IGBT relative to OUT; same drive strength as LVG
8 (BOOT) Bootstrap floating supply input Supplies high-side driver via internal LDMOS charge pump; replaces external bootstrap diode

Key Features

Feature Design Value
Integrated bootstrap LDMOS Eliminates external bootstrap diode; 120 Ω RON enables efficient capacitor recharge synchronized with LVG transitions
Programmable oscillator Frequency set by single RF/CF pair (200 kHz max); CF pin accepts external logic for forced shutdown or synchronization
Robust level-shifting architecture Charge-pump–based high-side driver with ±50 V/ns dV/dt immunity - maintains logic integrity in noisy 600 V systems
UVLO with hysteresis 9 V turn-on / 8 V turn-off thresholds prevent oscillation near supply collapse; critical for reliable cold-start in AC-DC ballasts
Dedicated dead-time control Fixed 1.25 µs typ. interlock prevents cross-conduction without external timing components or layout sensitivity

Applications

Compact Fluorescent Lamp (CFL) Ballast Resonant LLC Half-Bridge Converter

Use Scenario: Driving two STD2NB50-1 MOSFETs in a voltage-doubler-fed 18 W Sylvania Deluxe T/E lamp ballast operating from 110 V or 220 V AC mains.

IC Role / Device Role / Timing Role: Half-bridge gate driver with integrated oscillator; provides synchronized, dead-time–protected gate signals and self-contained bootstrap charging.

Use Value: Reduces BOM count by eliminating external bootstrap diode and timing RC network; enables compact PCB layout matching ST's reference design D96IN419B.

Use Scenario: Controlling primary-side switches in a 100–200 kHz resonant converter for industrial LED drivers or auxiliary power supplies.

IC Role / Device Role / Timing Role: High-voltage half-bridge driver with programmable oscillator; generates precise switching edges referenced to floating high-side source node (OUT).

Use Value: ±50 V/ns dV/dt immunity ensures stable level-shifting under fast dv/dt stress; 600 V VBOOT rating supports 400 V DC bus operation without derating.

Induction Heating Half-Bridge AC Motor Drive Gate Driver

Use Scenario: Driving 500 V-class IGBTs in a 20–50 kHz resonant heating inverter for domestic cooktops.

IC Role / Device Role / Timing Role: High-side/low-side gate driver with internal dead time and bootstrap management; interfaces directly with microcontroller PWM or analog oscillator.

Use Value: 270 mA sink current ensures rapid IGBT turn-off; internal 15.6 V VS clamp protects against supply rail overshoot during load transients.

Use Scenario: Gate-driving N-channel MOSFETs in a 3-phase inverter stage for 24–48 V BLDC motor control in HVAC blowers or power tools.

IC Role / Device Role / Timing Role: Standalone half-bridge driver used per phase leg; leverages CF pin for external PWM synchronization and RF for frequency tuning.

Use Value: Low 150 µA start-up current enables direct connection to unregulated auxiliary rails; SO8 package allows dense multi-phase layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2153(D)PbF No integrated oscillator; requires external RC or crystal timing; no internal bootstrap diode; 600 V rating but only 200 mA drive Used in fixed-frequency SMPS where external timing precision is preferred; lacks L6569A's bootstrap LDMOS safety margin Select when oscillator flexibility is less critical than cost, and external bootstrap diode is acceptable
IRS21844STRPBF Higher drive (620 mA sink), 100 V VBS max (not 600 V); no internal oscillator; bootstrap diode required; SOIC-8 Targeted at lower-voltage (<200 V DC bus) motor drives; lacks dV/dt immunity spec and VS clamp Choose for high-current, low-voltage half-bridges where 600 V capability and integrated timing are unnecessary

Compared with IR2153(D)PbF and IRS21844STRPBF, the L6569AD013TR uniquely combines 600 V capability, integrated oscillator, and patented bootstrap LDMOS-reducing component count and improving reliability in CFL and resonant converters where space and startup robustness are critical.

Availability

L6569AD013TR is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, resonant LLC converters, induction heating inverters, and BLDC motor drive half-bridge stages requiring stable component supply across industrial and lighting OEM programs.

Supply support for L6569AD013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, and automotive-grade ICs with broad industrial qualification.

The L6569 series belongs to ST's high-voltage AC-DC and lighting control product line, engineered specifically for energy-efficient electronic ballasts and resonant switch-mode power supplies operating up to 600 V.

FAQ

What is the purpose of the internal bootstrap LDMOS in the L6569AD013TR?

The internal bootstrap LDMOS (RON = 120 Ω typ.) replaces the external bootstrap diode traditionally used to charge the high-side floating supply capacitor. It operates synchronously with the LVG output, turning on during low-side conduction to recharge the BOOT capacitor - reducing component count, improving reliability, and eliminating reverse recovery losses.

Can the L6569AD013TR be driven by an external PWM signal instead of its internal oscillator?

Yes - the CF pin accepts external logic-level signals: pulling CF to GND forces shutdown (low-side ON, high-side OFF), while applying a square wave enables external clock synchronization. The RF pin can also source/sink current to drive another L6569, supporting multi-phase or full-H-bridge expansion without additional timing circuitry.

How does the L6569AD013TR handle undervoltage conditions on the VS pin?

The device incorporates an under-voltage lockout (UVLO) with 9 V turn-on and 8 V turn-off thresholds (1 V hysteresis). When VS drops below 8 V, both drivers disable and oscillator halts; restart occurs only after VS exceeds 9 V. This prevents erratic switching during brown-outs and ensures clean startup in AC-DC ballast applications.

What is the maximum recommended operating frequency for the L6569AD013TR?

The datasheet specifies a maximum oscillator frequency of 200 kHz. At higher frequencies, bootstrap capacitor recharge time may become insufficient due to the fixed 1.25 µs dead time and LDMOS RON, risking high-side driver starvation. For reliable operation, ST recommends ≤150 kHz in production designs using standard 100 nF bootstrap capacitors.

L6569AD013TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 16.6V
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
170mA, 270mA
Input Type:
RC Input Circuit
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

L6569AD013TR FAQ

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Please submit a Request for Quotation (RFQ) for L6569AD013TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for L6569AD013TR reliable?

The price and inventory of L6569AD013TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for L6569AD013TR is usually 5 days.

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Once your L6569AD013TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for L6569AD013TR?

For technical support, including L6569AD013TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your L6569AD013TR requirements.

6.How does Aetrix verify that L6569AD013TR is sourced from the original manufacturer or authorized distributors?

All L6569AD013TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that L6569AD013TR meets industry standards.

7.What is the process for return or replacement of L6569AD013TR?

All L6569AD013TR units undergo pre-shipment inspection (PSI). If there is an issue with L6569AD013TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The L6569AD013TR part is unused and in its original packaging.

Return procedure for L6569AD013TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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