STMicroelectronics L6569D013TR

Overview

L6569D013TR from STMicroelectronics is a high-voltage half-bridge gate driver IC with integrated oscillator, designed for driving external N-channel MOSFETs and IGBTs in resonant lamp ballasts and SMPS. It features 600V high-side rail capability, 1.25µs typ. dead time, internal bootstrap diode structure, 15.6V zener clamp on VS, and programmable oscillator frequency up to 200kHz.

For engineers reviewing the L6569D013TR datasheet, L6569D013TR pinout, L6569D013TR application, or L6569D013TR equivalent, key selection criteria include dV/dt immunity (±50V/ns), sink/source drive strength (270mA/170mA), startup current (150µA), UVLO hysteresis (1V typ.), and SO8 package compatibility with CFL and HID lamp control designs.

Technical Context

The L6569D013TR integrates a programmable RC oscillator (f_OSC = 1.3863/(R_FC_F)) and level-shifting circuitry enabling high-side gate drive referenced to a floating bootstrap supply (V_BOOT ≤ 618V). Its patented internal bootstrap LDMOS (R_ON = 120Ω typ.) replaces external diodes and synchronizes charging with LVG transitions.

Under-voltage lockout (VSUVN = 8V, VSUVP = 9V) ensures safe start-up; dV/dt immunity prevents false triggering during fast transients; and the internal logic enforces minimum 0.85–1.65µs dead time to eliminate cross-conduction between high- and low-side power switches.

Key Specifications

Pinout & Package

Package: SO8 (Small Outline, 8-pin, surface-mount), compliant with JEDEC MS-012, body dimensions 4.9 × 6.0 × 1.75 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver with oscillator applications.

Compared with IR2153(D)PbF and BD6124FV, the L6569D013TR delivers superior integration (internal bootstrap, programmable oscillator, higher dV/dt immunity), making it optimal for compact, high-reliability AC-input lamp and resonant converter designs where board space and startup robustness are critical.

Availability

L6569D013TR is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, HID ignition systems, resonant LLC adapters, and industrial motor control modules requiring stable component supply, long-lifecycle support, and SO8-compatible high-voltage gate drivers.

Supply support for L6569D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

The L6569 series belongs to ST's high-voltage analog power driver product line, engineered specifically for self-oscillating half-bridge control in energy-efficient lighting and offline power conversion.

FAQ

What is the function of the RF and CF pins on the L6569D013TR?

The RF pin supplies current to the external timing resistor, while the CF pin connects to the timing capacitor; together they set the oscillator frequency using f_OSC = 1.3863/(R_FC_F). The CF pin also accepts an external logic signal to force shutdown - pulling CF to GND disables the high-side driver and enables the low-side driver, allowing synchronous control in multi-driver systems.

How does the internal bootstrap structure replace the external diode?

The L6569D013TR uses a patented high-voltage lateral DMOS transistor (R_ON = 120Ω typ.) driven by an internal charge pump and synchronized to the LVG output with 50ns delay. During the low-side ON phase, this DMOS acts as a synchronous rectifier to charge the bootstrap capacitor - eliminating the need for an external diode and improving efficiency and reliability.

What is the significance of the 15.6V zener clamp on the VS pin?

The internal 15.6V zener clamp on VS protects the internal bias regulator and logic circuitry from overvoltage during transient events such as load dump or inductive kickback. It limits the VS rail to ≤16.6V (max), ensuring stable operation without requiring external clamping components - critical for robustness in unregulated offline supplies.

Can the L6569D013TR drive IGBTs as well as MOSFETs?

Yes - the L6569D013TR is explicitly specified to drive both N-channel power MOSFETs and IGBTs. Its 270mA sink / 170mA source output current, 600V V_BOOT rating, and ±50V/ns dV/dt immunity meet the gate drive requirements of common 600V IGBTs like the STGP10NC60HD, especially in resonant and soft-switching topologies where precise dead time and noise immunity are essential.