STMicroelectronics L9610C013TR

Overview

L9610C013TR from STMicroelectronics is a high-side PWM controller IC designed to drive external N-channel PowerMOS transistors in automotive lighting and industrial load control applications. It delivers controlled gate slew rate (0.5 V/µs typical), programmable switching frequency (up to 250 kHz), linear current limiting with protection timer, TTL-compatible enable input, and integrated load dump protection up to ±100 V transient. Used in 120 W halogen lamp dimmers for vehicle headlamps.

For engineers reviewing the L9610C013TR datasheet, L9610C013TR pinout, L9610C013TR application, or L9610C013TR equivalent, key selection considerations include its SO16N package compatibility, external PowerMOS gate drive capability, programmable protection timing via capacitor on TIM pin, and voltage-clamped operation under load dump conditions.

Technical Context

The L9610C013TR implements a ground-referenced triangle oscillator (f₀ = K_F/C_F, K_F = 800–2500 nF/s) and a pulse-width comparator that generates PWM output with adjustable leading/trailing edge slew rate (dV_G/dt = K_S/C_S, K_S = 3–9 nF·V/ms). Its internal charge pump enables high-side NMOS gate drive above VS, supporting bootstrap operation via BS and P1/P2 pins.

Functional protection includes undervoltage lockout (V_SL = 4–6 V), overvoltage shutdown (V_SH = 16–21 V), short-circuit current regulation (V_SI = 80–120 mV threshold), and latched MON output signaling fault condition. Protection delay time is set by external capacitor on TIM pin (t_prot = K_T·C_T, K_T = 0.12–0.44 ms/nF).

Key Specifications

Pinout & Package

Package: SO16 narrow (SO16N), 150 °C max junction temperature, R_{th j-amb} = 50 °C/W, ECOPACK® compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side PWM controller applications.

Compared with TPS4H160-Q1 and LM5069MMX-2, the L9610C013TR uniquely combines external PowerMOS gate drive, programmable slew rate, load dump resilience, and PWM dimming capability-making it irreplaceable for high-power automotive lighting where MOSFET selection and EMI control are critical.

Availability

L9610C013TR is available at Aetrix Electronics and suitable for automotive lighting control, industrial resistive load regulation, and off-road vehicle auxiliary power management requiring stable component supply across extended temperature and voltage stress conditions.

Supply support for L9610C013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.

The L9610C013TR belongs to ST's automotive analog power controller product line, engineered specifically for robust high-side switching in 12 V/24 V vehicle electrical systems with stringent EMC and transient immunity requirements.

FAQ

What is the maximum allowable load dump voltage the L9610C013TR can withstand?

The L9610C013TR is rated for ±100 V load dump transients per ISO 7637-2, with defined rise/fall times (5–10 ms) and source resistance constraints (≥0.5 Ω for 60 V, ≥10 Ω for ±100 V). Internal active clamping limits supply rail voltage to V_CLAMP, and external R1 must be selected to limit peak current to ≤0.3 A per absolute maximum ratings.

Can the L9610C013TR drive a P-channel MOSFET instead of an N-channel device?

No-the L9610C013TR is explicitly designed for high-side N-channel PowerMOS driving using its integrated charge pump and bootstrap circuitry (pins BS, P1, P2). It lacks the level-shifting architecture needed for direct P-channel gate control and does not provide low-side or complementary output stages.

How is the protection timer delay time calculated for overcurrent events?

The protection delay t_prot is determined by t_prot = K_T × C_T, where K_T = 0.12–0.44 ms/nF (typ. 0.44 ms/nF) and C_T is the capacitor connected between TIM and GND. For example, a 100 nF capacitor yields t_prot ≈ 44 ms, after which the MON pin goes low and the latch holds until VS drops below V_SL.

Is the L9610C013TR still in active production or obsolete?

Per STMicroelectronics' official documentation (Rev 2, Feb 2009), the L9610C013TR is marked "Obsolete Product(s)" in the datasheet header and device summary table. However, Aetrix Electronics maintains legacy inventory and offers full traceability, engineering support, and lifecycle coordination for continued use in existing designs.