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Diodes Incorporated LLSD101B-7
- Part No.:
- LLSD101B-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- DO-213AC, MINI-MELF, SOD-80
- Datasheet:
-
LLSD101B-7.pdf
- Description:
- SCHOTTKY SOD80 50V 0.015A 125C
- Quantity:
- Payment:
- Shipping:
Inventory:9,081
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Product details
Overview
LLSD101B-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in MiniMELF glass package, rated for 50 V peak repetitive reverse voltage, 15 mA forward continuous current, and 0.40 V forward voltage at 1.0 mA - optimized for low-power signal rectification and ESD-sensitive detector circuits.
For engineers reviewing the LLSD101B-7 datasheet, LLSD101B-7 pinout, LLSD101B-7 application, or LLSD101B-7 equivalent, key selection criteria include its 1.0 ns reverse recovery time, 2.1 pF junction capacitance at 0 V, cathode-band polarity marking, RoHS-compliant Sn97.5Ag2.5 termination, and UL 94V-0 flammability rating.
Technical Context
This Schottky diode employs guard ring construction to enhance transient immunity and suppress leakage-induced signal distortion in high-impedance analog front-ends. Its low VF and fast trr enable efficient signal clamping and RF detector operation up to ~1 GHz.
Designed for minimal parasitic impact, it delivers stable reverse current (≤200 nA at VR = 40 V) and predictable capacitance variation (2.1 pF @ 0 V, decreasing with reverse bias), supporting precision timing and envelope detection in battery-powered instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - maximum non-repetitive reverse voltage before breakdown; sets safe operating limit in clamp/protect circuits |
| VF @ 1.0 mA | 0.40 V - enables low-loss signal steering in micropower sensor interfaces |
| trr | 1.0 ns - supports high-frequency demodulation and fast edge detection without tail current |
| CT @ 0 V | 2.1 pF - minimizes loading on RF nodes and preserves Q-factor in tuned circuits |
| IR @ 40 V | 200 nA - ensures negligible leakage error in high-impedance voltage sampling paths |
| Pd | 400 mW - sufficient for continuous operation at 15 mA in ambient temperatures ≤ +125°C |
Pinout & Package
MiniMELF glass package (3.3–3.7 mm length × 1.3–1.6 mm diameter), hermetically sealed, cathode identified by single black band. No discrete pins; anode and cathode accessed via axial metal end caps.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unmarked end) | Forward current entry point | Connected to lower-potential node in rectifier/clamp configuration; requires clean solder wetting per MIL-STD-202 |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Reference node for voltage clamping; band orientation critical for PCB layout verification |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring construction | Improves ESD robustness and stabilizes leakage under transient stress without adding series resistance |
| Low VF (0.40 V @ 1 mA) | Reduces forward conduction loss in micropower detector and biasing networks |
| 1.0 ns reverse recovery | Enables accurate high-speed pulse rectification without minority-carrier storage delay |
| RoHS-compliant Sn97.5Ag2.5 finish | Ensures reliable solder joint formation with lead-free reflow profiles (J-STD-020C Level 1) |
Applications
| RF Detector Circuit | Low-Power Sensor Biasing |
|---|---|
Use Scenario: Demodulating AM signals in sub-GHz ISM band receivers with passive envelope detection. IC Role / Device Role / Timing Role: Signal rectifier converting RF carrier amplitude to DC envelope voltage. Use Value: 2.1 pF CT and 1.0 ns trr preserve signal fidelity; 0.40 V VF enables detection sensitivity down to –20 dBm. | Use Scenario: Providing temperature-stable bias current to photodiode amplifiers in portable gas sensors. IC Role / Device Role / Timing Role: Low-leakage current source reference diode in transimpedance feedback path. Use Value: 200 nA IR at 40 V prevents offset drift; –55°C to +125°C Tj range supports outdoor deployment. |
| ESD Protection Node | Clamp-Based Voltage Reference |
Use Scenario: Secondary-level transient suppression on analog input lines of medical-grade data acquisition modules. IC Role / Device Role / Timing Role: Fast-acting shunt protector diverting ESD pulses before IC input structures. Use Value: Guard ring design withstands >8 kV HBM; 1.0 ns response limits voltage overshoot to <5% above clamping threshold. | Use Scenario: Generating stable 0.4 V reference for comparator hysteresis in battery-monitoring ICs. IC Role / Device Role / Timing Role: Precision forward-voltage reference element in low-current, low-drift applications. Use Value: VF tolerance (±0.05 V) and <10 ppm/°C TC support ±1% reference accuracy over full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SD101BW-7 | Same MiniMELF package; VF = 0.41 V @ 1 mA, VRRM = 50 V, CT = 2.0 pF | Identical electrical specs; newer revision with updated process control and tighter VF distribution | Select SD101BW-7 for new designs requiring long-term supply continuity and enhanced lot-to-lot consistency |
| 1N5711TR | DO-35 glass package; VF = 0.43 V @ 1 mA, VRRM = 70 V, trr = 1.5 ns, CT = 2.5 pF | Higher VRRM and larger package footprint; less suitable for ultra-compact layouts | Choose 1N5711TR only when higher reverse voltage margin or legacy DO-35 compatibility is required |
Compared with LLSD101B-7, SD101BW-7 offers improved manufacturing traceability and identical performance in space-constrained designs, while 1N5711TR trades miniaturization for greater reverse voltage headroom and wider industry familiarity - making it viable only where board real estate permits.
Availability
LLSD101B-7 is available at Aetrix Electronics and suitable for RF detector circuits, low-power sensor biasing, ESD protection nodes, and clamp-based voltage references requiring stable component supply across production lifecycles.
Supply support for LLSD101B-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for power management, signal integrity, and protection.
The LLSD101x series belongs to Diodes' MiniMELF Schottky diode product line, engineered specifically for low-capacitance, fast-switching roles in RF, sensing, and portable instrumentation applications.
FAQ
Is LLSD101B-7 suitable for high-frequency RF applications?
Yes. With 1.0 ns reverse recovery time and 2.1 pF junction capacitance at 0 V, LLSD101B-7 supports envelope detection and signal clamping up to 1 GHz. Its MiniMELF geometry minimizes parasitic inductance, and measured VF stability across temperature ensures consistent detector output in wireless sensor nodes.
What is the thermal resistance of LLSD101B-7, and how does it affect power handling?
LLSD101B-7 has a junction-to-ambient thermal resistance (RJA) of 375 °C/W on FR-4 with recommended pad layout. At 15 mA forward current and 0.40 V drop, power dissipation is 6 mW - generating only ~2.25 °C rise above ambient, enabling reliable operation without heatsinking in compact PCBs.
Does LLSD101B-7 meet automotive qualification standards?
No. LLSD101B-7 is not AEC-Q200 qualified. It operates from –55°C to +125°C but lacks automotive-specific testing (e.g., vibration, board flex, extended HTOL). For automotive use, Diodes recommends the AEC-Q200-qualified SD101AW-7 or AP7165 series instead.
Can LLSD101B-7 be used as a replacement for LLSD101A-7 in existing designs?
Yes, with minor derating. LLSD101B-7 has lower VRRM (50 V vs. 60 V) and slightly lower VF (0.40 V vs. 0.41 V at 1 mA). If the original design operates below 50 V reverse stress and tolerates the reduced forward drop, substitution is electrically safe and mechanically identical (same MiniMELF package and marking).
LLSD101B-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- DO-213AC, MINI-MELF, SOD-80
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 15mA
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 15 A
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 1 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 40 V
- Capacitance @ Vr, F:
- 2.1pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Mini MELF
- Operating Temperature - Junction:
- -55°C ~ 125°C
LLSD101B-7 FAQ
1.How can I place an order for LLSD101B-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for LLSD101B-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LLSD101B-7 reliable?
The price and inventory of LLSD101B-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LLSD101B-7 is usually 5 days.
3.What payment methods are accepted for LLSD101B-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LLSD101B-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LLSD101B-7?
LLSD101B-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LLSD101B-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LLSD101B-7?
For technical support, including LLSD101B-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LLSD101B-7 requirements.
6.How does Aetrix verify that LLSD101B-7 is sourced from the original manufacturer or authorized distributors?
All LLSD101B-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LLSD101B-7 meets industry standards.
7.What is the process for return or replacement of LLSD101B-7?
All LLSD101B-7 units undergo pre-shipment inspection (PSI). If there is an issue with LLSD101B-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LLSD101B-7 part is unused and in its original packaging.
Return procedure for LLSD101B-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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