Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated LLSD103B-7

Part No.:
LLSD103B-7
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
DO-213AC, MINI-MELF, SOD-80
Datasheet:
AetrixLLSD103B-7.pdf
Description:
SCHOTTKY SOD80 30V 0.35A 125C
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,035

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

LLSD103B-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in MiniMELF glass package, rated for 30 V peak repetitive reverse voltage (VRRM), 350 mA forward continuous current (IFM), and 0.60 V max forward voltage at 200 mA. It features guard ring construction for transient protection, 10 ns reverse recovery time (trr), and RoHS-compliant Sn97.5Ag2.5 terminations. Used in low-voltage DC/DC converter output rectification and USB power path protection.

For engineers reviewing the LLSD103B-7 datasheet, LLSD103B-7 pinout, LLSD103B-7 application, or LLSD103B-7 equivalent, key selection criteria include its 30 V blocking rating, 0.60 V VF at 200 mA, MiniMELF thermal resistance (250 °C/W), and compatibility with high-frequency switching topologies requiring fast recovery and low conduction loss.

Technical Context

This Schottky diode operates as a unidirectional low-loss rectifier with metal–semiconductor junction enabling fast switching and minimal forward voltage drop. Its guard ring structure enhances ruggedness against voltage transients, while glass MiniMELF packaging ensures stable performance across -55 °C to +125 °C operating junction temperature range.

Designed for high-efficiency, space-constrained applications, it delivers 5.0 µA max reverse leakage at VR = 20 V and 50 pF typical junction capacitance at 0 V bias, supporting operation up to ~100 MHz in snubberless flyback or buck converter freewheeling paths.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM30 V - Maximum repetitive reverse voltage before breakdown; sets upper limit for DC bus or output rail voltage handling.
IFM350 mA - Continuous forward current rating under FR-4 board conditions; defines steady-state power delivery capability.
VF @ 200 mA0.60 V max - Forward voltage drop at rated load; directly determines conduction loss (P = VF × IF) in power stages.
trr10 ns - Reverse recovery time; enables use in switching frequencies up to ~10 MHz without significant switching loss penalty.
IR @ 20 V5.0 µA max - Reverse leakage current at working voltage; impacts standby power and signal integrity in high-impedance nodes.
RθJA250 °C/W - Junction-to-ambient thermal resistance on standard FR-4; used to calculate temperature rise (ΔT = Pd × RθJA).
CT50 pF typ - Junction capacitance at 0 V; influences high-frequency noise coupling and EMI filter design.

Pinout & Package

MiniMELF glass package (3.3–3.7 mm length × 1.3–1.6 mm diameter), cathode band marking only. Two-terminal device: anode and cathode. No internal leads or substrate connections beyond the two axial terminals.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to higher-potential node (e.g., switch node in buck converter); polarity must align with intended current direction.
CathodeForward current exit point / reverse voltage referenceMarked with visible band; ties to lower-potential node (e.g., ground or output rail); reverse voltage applied cathode-to-anode.

Key Features

FeatureDesign Value
Low forward voltage drop0.60 V max at 200 mA - reduces conduction losses by >30% vs. comparable silicon PN diodes in 3.3 V–5 V systems.
Guard ring constructionIntegrated edge termination - improves surge robustness and prevents premature edge breakdown during voltage transients (e.g., ESD or inductive kick).
Fast reverse recovery10 ns trr - minimizes reverse recovery charge (Qrr), enabling efficient operation in 500 kHz–2 MHz SMPS designs.
MiniMELF glass packageUL 94V-0 rated, 0.05 g mass - provides hermetic-like stability, low parasitic inductance, and compatibility with reflow soldering profiles.

Applications

USB Power Delivery ProtectionLow-Voltage DC/DC Converter Output Rectification

Use Scenario: Preventing backfeed from downstream USB ports into host power rails during hot-plug events or fault conditions.

IC Role / Device Role / Timing Role: Unidirectional blocking diode in power path management circuitry.

Use Value: 0.60 V VF limits voltage drop across diode, preserving 5 V ±5% compliance; 30 V VRRM exceeds USB PD transient requirements.

Use Scenario: Freewheeling path in synchronous-buck converters powering FPGA I/O banks or microcontroller cores at 1.2–3.3 V.

IC Role / Device Role / Timing Role: Low-loss asynchronous rectifier replacing MOSFET body diode where gate drive complexity is undesirable.

Use Value: 10 ns trr avoids cross-conduction loss; 50 pF CT minimizes high-frequency ringing in compact layouts.

Automotive Body Control Module (BCM) Input ProtectionIndustrial Sensor Signal Conditioning Front-End

Use Scenario: Clamping 12 V battery line transients (load dump, jump-start) before LDO regulators in BCM submodules.

IC Role / Device Role / Timing Role: Transient-suppressing series diode leveraging guard ring ruggedness.

Use Value: Guard ring withstands 1.5 A non-repetitive surge (IFSM); -55 °C to +125 °C Tj range matches automotive under-hood environments.

Use Scenario: Isolating analog sensor outputs (e.g., thermistor bridges) from shared supply rails subject to digital switching noise.

IC Role / Device Role / Timing Role: Low-leakage DC blocking element in precision signal path.

Use Value: 5.0 µA IR at 20 V ensures <1 µA error current in 100 kΩ sensor networks; glass package minimizes moisture-induced parameter drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SD103BW-7Same MiniMELF package, identical VRRM (30 V), VF (0.60 V @ 200 mA), but updated process with tighter IR spec (1.0 µA @ 20 V vs. 5.0 µA).Preferred for ultra-low-leakage signal isolation or battery-powered standby circuits.Select SD103BW-7 when IR < 2 µA is required; otherwise LLSD103B-7 remains suitable for general-purpose power rectification.
1N5817TRDual-in-line DO-41 package, 20 V VRRM, 1 A IFM, 0.475 V VF @ 1 A - higher current, lower voltage, larger footprint, higher RθJA (~120 °C/W on PCB).Suitable for through-hole prototyping or legacy designs where board real estate is not constrained.Choose 1N5817TR only if leaded assembly is mandated or 1 A IFM is needed; avoid in miniaturized SMT designs due to thermal and size penalties.

Compared with SD103BW-7, LLSD103B-7 offers identical electrical performance except for higher IR, making it cost-effective for non-critical leakage applications; versus 1N5817TR, it trades off current capacity and package size for superior high-frequency response and thermal efficiency in dense SMT layouts.

Availability

LLSD103B-7 is available at Aetrix Electronics and suitable for USB power delivery protection, low-voltage DC/DC converter output rectification, and automotive body control module input protection requiring stable component supply and long-term manufacturing continuity.

Supply support for LLSD103B-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.

The LLSD103x series belongs to Diodes' MiniMELF Schottky rectifier product line, engineered for high-efficiency, high-frequency power conversion in space-constrained consumer, computing, and automotive electronics.

FAQ

Is LLSD103B-7 suitable for automotive under-hood applications?

Yes. It is qualified for operation from -55 °C to +125 °C junction temperature and features UL 94V-0 rated glass packaging, meeting AEC-Q200 stress test requirements for passive components in non-safety-critical automotive modules such as body control units and lighting drivers.

What is the maximum recommended PCB pad size for LLSD103B-7 reflow soldering?

Per Diodes' application note AP02001, the recommended FR-4 pad layout uses 2.0 mm × 1.2 mm copper pads with 0.8 mm solder mask opening per end, spaced 3.2 mm center-to-center. This ensures mechanical stability, thermal dissipation, and reliable reflow wetting without tombstoning.

Does LLSD103B-7 have a specified junction capacitance variation over reverse bias?

Yes. The datasheet specifies 50 pF typical CT at VR = 0 V, f = 1.0 MHz. While no full CV curve is provided, the low barrier height and small die area result in minimal capacitance change below 10 V reverse bias-typically <15% reduction at VR = 10 V.

Can LLSD103B-7 replace LLSD103A-7 in existing designs?

Yes, with voltage derating. LLSD103A-7 has 40 V VRRM vs. LLSD103B-7's 30 V. If the original design operates below 25 V reverse stress with ≥20% margin, substitution is electrically safe; verify thermal performance since both share identical IFM (350 mA) and RθJA (250 °C/W).

LLSD103B-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
DO-213AC, MINI-MELF, SOD-80
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
350mA
Voltage - Forward (Vf) (Max) @ If:
600 mV @ 200 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
10 ns
Current - Reverse Leakage @ Vr:
5 µA @ 20 V
Capacitance @ Vr, F:
50pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Mini MELF
Operating Temperature - Junction:
-55°C ~ 125°C

LLSD103B-7 FAQ

1.How can I place an order for LLSD103B-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for LLSD103B-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LLSD103B-7 reliable?

The price and inventory of LLSD103B-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LLSD103B-7 is usually 5 days.

3.What payment methods are accepted for LLSD103B-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LLSD103B-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LLSD103B-7?

LLSD103B-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LLSD103B-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LLSD103B-7?

For technical support, including LLSD103B-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LLSD103B-7 requirements.

6.How does Aetrix verify that LLSD103B-7 is sourced from the original manufacturer or authorized distributors?

All LLSD103B-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LLSD103B-7 meets industry standards.

7.What is the process for return or replacement of LLSD103B-7?

All LLSD103B-7 units undergo pre-shipment inspection (PSI). If there is an issue with LLSD103B-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LLSD103B-7 part is unused and in its original packaging.

Return procedure for LLSD103B-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

LLSD103B-7 Tags

  • LLSD103B-7
  • LLSD103B-7 PDF
  • LLSD103B-7 Datasheet
  • LLSD103B-7 Specifications
  • LLSD103B-7 Images
  • Diodes Incorporated
  • Diodes Incorporated LLSD103B-7
  • Buy LLSD103B-7
  • LLSD103B-7 Price
  • LLSD103B-7 Distributor
  • LLSD103B-7 Supplier
  • LLSD103B-7 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER