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Texas Instruments LM25101AMR/NOPB
- Part No.:
- LM25101AMR/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Datasheet:
-
LM25101AMR/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOPWR
- Quantity:
- Payment:
- Shipping:
Inventory:4,597
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Product details
Overview
LM25101AMR/NOPB from Texas Instruments is a 3-A, 80-V high-voltage half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge topologies. It features TTL-compatible inputs, 25-ns typical propagation delay, 8-ns rise/fall times into 1000-pF load, and integrated bootstrap diode supporting up to 100-V DC bootstrap rail voltage. It is used in 48-V server power supplies and solar DC-DC converters.
For engineers reviewing the LM25101AMR/NOPB datasheet, LM25101AMR/NOPB pinout, LM25101AMR/NOPB application, or LM25101AMR/NOPB equivalent, key selection criteria include peak output current (3 A), bootstrap voltage capability (up to 100 V), propagation delay matching (≤10 ns), UVLO thresholds on both VDD and HB–HS rails, and SO-PowerPAD package thermal performance (RθJA = 46.1°C/W).
Technical Context
The LM25101AMR/NOPB implements a robust level-shifting architecture to drive the high-side output referenced to the HS node, enabling operation with floating source potentials up to 100 V. Its dual independent input logic (HI/LI) supports flexible PWM control schemes including complementary, phase-shifted, or independent switching modes.
Undervoltage lockout operates separately on VDD (6.9 V rising threshold) and HB–HS (6.6 V rising threshold), ensuring safe startup and fault recovery. The integrated bootstrap diode (forward drop ≤0.85 V at 100 µA) eliminates need for external fast-recovery diodes in many designs while maintaining <37-ns reverse recovery time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | 3 A sourcing/sinking - enables fast charging/discharging of large gate capacitances (e.g., >10 nC MOSFETs) at high switching frequencies. |
| Bootstrap Voltage Range | Up to 100 V DC - supports high-input-voltage topologies such as 48-V server PSUs and solar MPPT stages without external level-shifting circuitry. |
| Propagation Delay | 22–56 ns (typ. 25 ns) - ensures tight timing control in high-frequency (>500 kHz) power converters with minimal dead-time uncertainty. |
| Delay Matching | ≤10 ns (typ. 4 ns) - minimizes shoot-through risk by tightly aligning HO and LO turn-on/turn-off edges under varying load and temperature conditions. |
| Rise/Fall Time | 8 ns into 1000 pF - delivers sharp edge transitions critical for reducing switching losses in GaN and high-speed Si MOSFET applications. |
| UVLO Thresholds | VDD: 6.9 V (±0.5 V hysteresis); HB–HS: 6.6 V (±0.4 V hysteresis) - prevents erratic operation during brownout or bootstrap capacitor undercharge. |
| Supply Voltage Range | 9–14 V on VDD - compatible with standard 12-V bias rails while allowing margin for ripple and dropout. |
Pinout & Package
The LM25101AMR/NOPB is packaged in an 8-pin SO PowerPAD (DDA) with exposed thermal pad soldered to PCB ground plane for enhanced thermal dissipation (RθJB = 13.8°C/W). This thermally optimized package supports continuous 3-A output current in compact industrial and telecom power modules.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Positive gate drive supply input | Primary 9–14 V bias rail; requires local 1-µF low-ESR/ESL decoupling to VSS for stable high-current switching. |
| HB | High-side bootstrap rail | Connects to positive terminal of bootstrap capacitor; supports up to 100 V above HS node for high-side gate drive. |
| HO | High-side gate driver output | Drives gate of high-side N-MOSFET; referenced to HS pin; must route with short, low-inductance trace. |
| HS | High-side MOSFET source connection | Return path for bootstrap capacitor and high-side source; forms floating reference for HO output stage. |
| HI | High-side control input | TTL-compatible (1.3–2.3 V logic threshold); unused pin must be tied to VSS to prevent noise-induced switching. |
| LI | Low-side control input | TTL-compatible input; independent of HI for asymmetric or non-complementary PWM control schemes. |
| LO | Low-side gate driver output | Drives gate of low-side N-MOSFET; referenced to VSS; capable of 3-A sink/source into capacitive loads. |
| VSS | Ground return | Common reference for all signals and low-side driver; must connect directly to power ground plane beneath thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Independent HI/LI logic inputs | Enables full control freedom-complementary, phase-shifted, or asynchronous switching without external logic or dead-time generators. |
| Integrated bootstrap diode | Eliminates discrete diode requirement; reduces BOM count and layout area while maintaining ≤37 ns reverse recovery for clean bootstrap recharge. |
| Robust level shifter | Delivers clean, high-speed signal translation from logic-ground-referenced HI input to HS-referenced HO output with <3 ns jitter. |
| Dual-rail UVLO protection | Separately monitors VDD and HB–HS voltages to prevent partial or unsafe gate drive activation during startup or fault conditions. |
| Thermally enhanced SO PowerPAD | Exposes die attach pad to PCB ground plane, achieving RθJB = 13.8°C/W-critical for sustained 3-A operation in enclosed power modules. |
Applications
| Motor-Controlled Drivers | Half and Full Bridge Power Converters |
|---|---|
Use Scenario: Driving N-channel H-bridge in BLDC motor controllers for industrial automation and robotics. IC Role / Device Role / Timing Role: Gate driver providing independent HI/LI control to enable precise commutation sequencing and regenerative braking. Use Value: 3-A peak current and 8-ns edge speeds reduce MOSFET conduction and switching losses, improving efficiency at 20–100 kHz PWM frequencies. |
Use Scenario: High-efficiency isolated DC-DC conversion in telecom rectifiers and data center PSUs. IC Role / Device Role / Timing Role: Half-bridge driver controlling primary-side switches in phase-shifted full-bridge or active-clamp forward topologies. Use Value: 100-V bootstrap capability and <10 ns delay matching ensure reliable operation with 48-V input and >100-V transient spikes on HS node. |
| Synchronous Buck Converters | Solar DC-DC and DC-AC Converters |
Use Scenario: Point-of-load regulation in FPGA and ASIC power delivery networks requiring fast transient response. IC Role / Device Role / Timing Role: Dual-output driver enabling high-side/low-side MOSFET control with minimal dead-time uncertainty. Use Value: 25-ns propagation delay and tight delay matching reduce minimum on-time limitation, supporting >1 MHz switching for ultra-compact magnetics. |
Use Scenario: MPPT stage and DC-AC inversion in string inverters and microinverters interfacing photovoltaic arrays. IC Role / Device Role / Timing Role: High-voltage gate driver operating across wide input range (20–100 V) with robust UVLO on both rails. Use Value: Integrated bootstrap diode and 100-V HB rating simplify design of high-efficiency, high-reliability solar power stages without external diode stress concerns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5101AMX/NOPB | Higher 5-A peak output current; wider 10–20 V VDD range; no integrated bootstrap diode. | Better suited for higher-power (>500 W) converters with larger MOSFETs; requires external bootstrap diode and tighter VDD regulation. | Select when driving >20-nC gate charges or operating above 14 V VDD; accept added BOM and layout complexity for extra drive strength. |
| UCC27211DRCR | 3-A output; 120-V bootstrap rating; faster 15-ns propagation; no integrated bootstrap diode; 10-pin WSON package. | Optimized for ultra-high-frequency GaN-based converters (>1 MHz); requires external bootstrap diode and more aggressive layout for EMI control. | Choose for GaN FETs or >1 MHz designs where lower propagation delay and higher bootstrap voltage outweigh added component count. |
Compared with LM5101AMX/NOPB and UCC27211DRCR, the LM25101AMR/NOPB offers integrated bootstrap diode and SO PowerPAD thermal performance ideal for cost-sensitive, medium-power (100–300 W) 48-V server and solar applications where layout simplicity and reliability are prioritized over maximum frequency or drive strength.
Availability
LM25101AMR/NOPB is available at Aetrix Electronics and suitable for 48-V server power supplies, solar DC-DC converters, and motor-controlled drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for LM25101AMR/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with decades of expertise in high-reliability power IC design.
The LM25101AMR/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for efficient, robust control of N-channel MOSFETs in isolated and non-isolated DC-DC converters, motor drives, and renewable energy systems.
FAQ
What is the maximum bootstrap voltage supported by the LM25101AMR/NOPB?
The LM25101AMR/NOPB supports a maximum bootstrap voltage of 100 V DC relative to the HS pin. This allows operation with high-input-voltage topologies such as 48-V server power supplies and solar MPPT stages where the HS node swings up to 100 V above ground. The device's absolute maximum HB-to-HS rating is 18 V, but the functional bootstrap rail voltage (VHB – VHS) is rated up to 100 V per the recommended operating conditions table in the datasheet. Exceeding this may cause premature failure of the internal bootstrap diode.
Does the LM25101AMR/NOPB require an external bootstrap diode?
No, the LM25101AMR/NOPB integrates a bootstrap diode with 0.85 V typical forward voltage at 100 µA and 37 ns reverse recovery time. This eliminates the need for an external fast-recovery diode in most applications, reducing BOM count and PCB area. However, in high-frequency (>1 MHz) or high-temperature environments where diode self-heating increases reverse leakage, an external Schottky diode may improve reliability-though it is not required for standard operation per the datasheet specifications.
What is the purpose of the NC pins on the LM25101AMR/NOPB SO PowerPAD package?
The LM25101AMR/NOPB in the 8-pin SO PowerPAD (DDA) package has no NC (no-connect) pins-the pinout consists solely of VDD, HB, HO, HS, HI, LI, LO, and VSS. NC pins appear only in the 10-pin WSON (DPR) variant (pins 5 and 6), where they are electrically and physically unconnected. For the LM25101AMR/NOPB, all eight pins are functional and must be properly routed per the datasheet pin function table; leaving any pin unconnected-especially HI or LI-may cause unintended switching due to noise coupling.
How does the LM25101AMR/NOPB handle undervoltage lockout during startup?
The LM25101AMR/NOPB implements dual independent UVLO circuits: one monitors VDD (rising threshold 6.9 V, hysteresis 0.5 V) and another monitors HB–HS (rising threshold 6.6 V, hysteresis 0.4 V). During startup, both outputs remain low until VDD exceeds its threshold; if HB–HS later falls below its threshold-e.g., due to bootstrap capacitor discharge-the HO output is disabled while LO remains operational. This prevents partial high-side drive that could cause shoot-through or MOSFET damage, ensuring safe and predictable power-up behavior in half-bridge configurations.
Can the LM25101AMR/NOPB drive GaN FETs effectively?
Yes, the LM25101AMR/NOPB can drive enhancement-mode GaN FETs, particularly in sub-500-kHz applications. Its 8-ns rise/fall times into 1000-pF load, 3-A peak current, and <10 ns delay matching meet key GaN gate drive requirements. However, for >1-MHz GaN operation, devices like the UCC27211DRCR offer lower propagation delay (15 ns vs. 25 ns) and higher bootstrap voltage (120 V), making them better suited for ultra-high-frequency designs where gate charge speed and transient immunity are critical. The LM25101AMR/NOPB remains optimal for cost-sensitive, thermally constrained GaN applications up to 500 kHz.
LM25101AMR/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 9V ~ 14V
- Logic Voltage - VIL, VIH:
- 2.3V, -
- Current - Peak Output (Source, Sink):
- 3A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 100 V
- Rise / Fall Time (Typ):
- 430ns, 260ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO PowerPad
LM25101AMR/NOPB FAQ
1.How can I place an order for LM25101AMR/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM25101AMR/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM25101AMR/NOPB reliable?
The price and inventory of LM25101AMR/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM25101AMR/NOPB is usually 5 days.
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LM25101AMR/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM25101AMR/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM25101AMR/NOPB?
For technical support, including LM25101AMR/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM25101AMR/NOPB requirements.
6.How does Aetrix verify that LM25101AMR/NOPB is sourced from the original manufacturer or authorized distributors?
All LM25101AMR/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM25101AMR/NOPB meets industry standards.
7.What is the process for return or replacement of LM25101AMR/NOPB?
All LM25101AMR/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM25101AMR/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM25101AMR/NOPB part is unused and in its original packaging.
Return procedure for LM25101AMR/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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