Texas Instruments LM5100ASD/NOPB

Overview

LM5100ASD/NOPB from Texas Instruments is a 3-A high-voltage dual-channel gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge topologies. It features CMOS-input logic thresholds, 118-V bootstrap supply capability, 25-ns typical propagation delay, and integrated bootstrap diode - enabling robust operation in industrial DC/DC converters up to 100 V HS node voltage.

For engineers reviewing the LM5100ASD/NOPB datasheet, LM5100ASD/NOPB pinout, LM5100ASD/NOPB application, or LM5100ASD/NOPB equivalent, key selection criteria include bootstrap diode forward voltage (0.52 V @ 100 µA), UVLO rising thresholds (6.9 V on VDD, 6.6 V on HB), propagation delay matching (≤10 ns), 1000-pF load drive with 8-ns rise/fall times, and SO PowerPAD-8 package thermal performance (R_θJA = 40°C/W).

Technical Context

The LM5100ASD/NOPB implements a floating high-side driver referenced to the HS node, with a dedicated level shifter that maintains clean, low-power signal translation from logic-level HI input to HO output. Its bootstrap diode (anode to VDD, cathode to HB) enables self-charging of the HB capacitor during each HS-to-ground transition, supporting continuous high-side conduction without external components.

Undervoltage lockout operates independently on VDD and HB–HS rails: VDD UVLO triggers full output disable (HO and LO held low), while HB UVLO disables only HO. The device supports TTL- or CMOS-compatible inputs via family variants - LM5100A uses CMOS thresholds (V_IL = 4.5–6.3 V), distinguishing it from LM5101A's TTL thresholds (V_IL = 1.3–2.3 V).

Key Specifications

Pinout & Package

LM5100ASD/NOPB is packaged in an 8-pin SO PowerPAD™ (DPR) thermally enhanced surface-mount package with exposed pad soldered to PCB ground plane for improved heat dissipation (R_θJA = 40°C/W, R_θJC(bot) = 4.4°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual-channel gate driver applications.

Compared with LM5101ASD/NOPB, LM5100ASD/NOPB offers superior noise immunity via CMOS thresholds and wider VDD operating range; versus UCC27201D, it delivers 50% higher peak current, integrated bootstrap diode, and 4.3× better thermal performance - directly enabling higher power density and reliability in compact converters.

Availability

LM5100ASD/NOPB is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and server DC/DC converters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for LM5100ASD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.

LM5100ASD/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for efficiency-critical, high-reliability power conversion in synchronous buck, half-bridge, and active-clamp topologies up to 100 V HS node.

FAQ

What is the maximum allowable voltage on the HS pin of the LM5100ASD/NOPB?

The LM5100ASD/NOPB specifies a maximum HS-to-VSS voltage of 100 V under recommended operating conditions. Absolute maximum rating allows transient excursions up to 100 V, but TI recommends clamping HS with the body diode of the low-side MOSFET and maintaining HS slew rate below 50 V/ns to avoid latch-up or overstress. The integrated bootstrap diode and level shifter are validated for reliable operation within this 100-V window.

Does the LM5100ASD/NOPB require an external bootstrap diode?

No, the LM5100ASD/NOPB integrates a high-voltage bootstrap diode (anode to VDD, cathode to HB) with 0.52-V forward drop at 100 µA and 0.8-V at 100 mA. This eliminates the need for an external diode in standard bootstrap configurations, simplifying layout and improving reliability. External diodes may still be added for ultra-high-reliability or high-temperature applications, but are not required for nominal operation.

How does the UVLO function differ between the VDD and HB rails in the LM5100ASD/NOPB?

In the LM5100ASD/NOPB, VDD UVLO (6.9 V rising threshold) disables both HO and LO outputs until stable logic supply is present. HB UVLO (6.6 V rising threshold) acts independently: if HB falls below threshold, only HO is disabled while LO remains fully functional. This allows continued low-side operation and fault reporting during bootstrap capacitor charging faults - a critical safety feature in bridge topologies.

What package type is used for the LM5100ASD/NOPB, and why is thermal design important?

The LM5100ASD/NOPB uses the SO PowerPAD-8 (DPR) package with an exposed thermal pad soldered to the PCB ground plane. Its R_θJA is 40°C/W - over 4× better than standard SOIC-8 (170°C/W). Because the device dissipates up to 1.6 W under full 3-A switching load, proper thermal design (via pad soldering and copper pour) is essential to maintain junction temperature ≤125°C and ensure long-term reliability in continuous operation.

Can the LM5100ASD/NOPB drive MOSFETs in non-complementary configurations like active clamp or phase-shifted full-bridge?

Yes, the LM5100ASD/NOPB supports non-complementary drive via independent HI and LI inputs - no internal logic forces complementarity. This enables direct implementation of active clamp timing, phase-shifted modulation, or asymmetric PWM schemes. The 3-A peak current, 8-ns rise time, and <10-ns HO/LO delay mismatch ensure precise, low-loss switching even with complex gate timing sequences.