Texas Instruments LM5101CMYE/NOPB

Overview

LM5101CMYE/NOPB from Texas Instruments is a 1-A, high-voltage dual N-channel MOSFET gate driver with independent TTL-input logic, integrated bootstrap diode, and robust level-shifting architecture for synchronous buck and half-bridge topologies. It supports up to 100 V HS node voltage, delivers 8 ns rise/fall times into 1000-pF load, and features UVLO on both VDD (6.6 V rising threshold) and HB (6.6 V rising threshold) rails. It is used in isolated DC-DC converters requiring precise timing control and high-side floating operation.

For engineers reviewing the LM5101CMYE/NOPB datasheet, LM5101CMYE/NOPB pinout, LM5101CMYE/NOPB application, or LM5101CMYE/NOPB equivalent, key selection criteria include bootstrap diode forward voltage (0.8 V at 100 mA), propagation delay matching (4 ns typical), output current capability (1 A peak sink/source), thermal resistance (R_θJA = 40 °C/W in SO PowerPAD-8), and TTL-compatible input thresholds (1.8 V rising).

Technical Context

The LM5101CMYE/NOPB implements a high-speed, low-power level shifter that translates TTL logic inputs referenced to VSS into clean, matched drive signals referenced to the floating HS node - enabling precise timing control of high-side MOSFETs in hard-switched topologies. Its integrated bootstrap diode (V_F = 0.8 V @ 100 mA, t_rr = 37 ns) eliminates external components while maintaining reliable capacitor recharge across wide temperature ranges (–40°C to +125°C).

UVLO circuitry independently monitors VDD and HB–HS supply rails, holding HO and LO low until both exceed 6.6 V (rising), with 0.4 V hysteresis on HB and 0.5 V on VDD. The device operates with VDD from 9 V to 14 V and supports HS slew rates up to 50 V/ns - critical for minimizing shoot-through risk in fast-switching power stages.

Key Specifications

Pinout & Package

LM5101CMYE/NOPB is housed in an 8-pin SO PowerPAD™ package (3.90 mm × 4.89 mm) with exposed thermal pad soldered to PCB ground plane for enhanced thermal dissipation (R_θJA = 40 °C/W on 4-layer board). Pin 1 is VDD; pin 2 is HB; pin 3 is HO; pin 4 is HS; pin 5 is HI; pin 6 is LI; pin 7 is VSS; pin 8 is LO.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual gate driver applications.

Compared with LM5101AMYE/NOPB and UCC27211DRCR, LM5101CMYE/NOPB uniquely balances 1-A drive capability, integrated bootstrap diode, TTL compatibility, and 100 V HS rating - making it the most thermally efficient and layout-simple option for mid-power 48 V–60 V synchronous buck and half-bridge converters.

Availability

LM5101CMYE/NOPB is available at Aetrix Electronics and suitable for current-fed push-pull converters, half-bridge power converters, and synchronous buck converters requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across temperature.

Supply support for LM5101CMYE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions for industrial, automotive, and communications markets, with leadership in power management ICs and high-reliability interface products.

LM5101CMYE/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for synchronous rectification and half-bridge topologies in telecom, server, and industrial power supplies - emphasizing integration, timing precision, and ruggedness under dynamic bus conditions.

FAQ

What is the maximum allowable HS node voltage for LM5101CMYE/NOPB?

The LM5101CMYE/NOPB supports an HS node voltage range of –1 V to +100 V, as specified in the Absolute Maximum Ratings table. This allows operation in 48 V and 60 V bus systems with margin for transient spikes. Negative excursions below –1 V must not exceed VDD – 15 V to avoid damage - for example, with VDD = 12 V, HS must stay above –3 V.

Does LM5101CMYE/NOPB require an external bootstrap diode?

No, LM5101CMYE/NOPB integrates a high-voltage bootstrap diode with 0.8 V forward voltage at 100 mA and 37 ns reverse recovery time. This eliminates the need for an external diode, reducing component count, PCB area, and parasitic inductance in the bootstrap loop - a key advantage over alternatives like UCC27211DRCR.

What is the input logic compatibility of LM5101CMYE/NOPB?

LM5101CMYE/NOPB uses TTL-compatible inputs: V_IL = 1.3–2.3 V (max) and V_IH = 2.0–3.0 V (min) at 25°C, with 50 mV hysteresis. This enables direct interfacing with 3.3 V and 5 V microcontrollers and PWM controllers without level shifters - unlike CMOS-input variants such as LM5100C.

How does the UVLO function on the HB rail affect LM5101CMYE/NOPB operation?

The HB UVLO circuit in LM5101CMYE/NOPB monitors the bootstrap capacitor voltage (V_HB – V_HS) independently and disables only the high-side output (HO) if the voltage falls below 6.6 V (rising threshold). This preserves low-side control (LO) functionality during bootstrap faults - a critical safety feature in synchronous buck designs where continued low-side operation aids safe shutdown.

What thermal performance can be expected from LM5101CMYE/NOPB in SO PowerPAD-8 package?

In the SO PowerPAD-8 package, LM5101CMYE/NOPB achieves R_θJA = 40 °C/W on a standard 4-layer PCB with thermal vias under the exposed pad. With 1-A peak current and typical 2.5 mA operating supply current, junction temperature rise remains within safe limits (<40°C rise at 1 W dissipation), supporting continuous operation at 125°C ambient when properly heatsinked.