Texas Instruments LM5102MM/NOPB

Overview

LM5102MM/NOPB from Texas Instruments is a high-voltage half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge topologies. It supports bootstrap supply voltages up to 118 V dc, delivers 1.8 A peak output current per channel, achieves 15 ns rise/fall times into 1000-pF loads, and features independently programmable rising-edge delays (100–750 ns) via external RT1/RT2 resistors. It is used in high-efficiency DC-DC converters requiring precise dead-time control.

For engineers reviewing the LM5102MM/NOPB datasheet, LM5102MM/NOPB pinout, LM5102MM/NOPB application, or LM5102MM/NOPB equivalent, key selection criteria include bootstrap voltage capability (up to 118 V), independent high/low-side delay programming, UVLO thresholds on both VDD (6.9 V) and HB (6.6 V), fast 25-ns typical turn-off propagation delay, and VSSOP-10 package compatibility with industrial temperature range (–40°C to +125°C).

Technical Context

The LM5102MM/NOPB integrates a robust level shifter enabling high-speed logic-to-high-side signal translation while consuming low quiescent current (0.4 mA typical at 25°C). Its floating high-side driver operates with HS referenced to up to 100 V, and the internal bootstrap diode (VF = 0.85 V @ 100 mA) eliminates need for external diode in many designs.

Undervoltage lockout acts independently on VDD and HB rails - VDD UVLO triggers at 6.9 V (0.5 V hysteresis), while HB UVLO activates at 6.6 V (0.4 V hysteresis) - ensuring safe startup and preventing shoot-through during brownout. The RT1/RT2 pins bias at 3 V and accept 5–100 kΩ resistors to set delay linearly from ~100 ns to ~750 ns.

Key Specifications

Pinout & Package

VSSOP-10 (DGS) package with 0.5-mm pitch, 3.0 mm × 3.0 mm body size, and exposed thermal pad (soldered to PCB ground plane for enhanced thermal performance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with UCC27201DR and IR2110PbF, the LM5102MM/NOPB uniquely combines integrated bootstrap diode, independent RT-programmable delays, and 27-ns turn-off in a compact VSSOP-10 package - making it optimal for new high-frequency, space-constrained synchronous buck and half-bridge designs requiring precise dead-time control.

Availability

LM5102MM/NOPB is available at Aetrix Electronics and suitable for current-fed push-pull converters, half-bridge power converters, and synchronous buck converters requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for LM5102MM/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in power management IC design and manufacturing.

The LM5102MM/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for efficient, reliable control of N-channel MOSFETs in isolated and non-isolated DC-DC topologies operating up to 100 V HS nodes.

FAQ

What is the maximum bootstrap supply voltage supported by the LM5102MM/NOPB?

The LM5102MM/NOPB supports a maximum bootstrap supply voltage (V_HB) of 118 V dc, enabling operation with high-side source voltages up to 100 V. This rating includes margin for transient overshoot and ensures robust performance in 48-V and 60-V industrial bus applications. The internal bootstrap diode is rated for continuous 100-mA forward current and exhibits 0.85-V forward voltage at that level.

How does the LM5102MM/NOPB implement independent rising-edge delay for high-side and low-side outputs?

The LM5102MM/NOPB uses two dedicated analog timer inputs - RT1 for HO and RT2 for LO - each biased at 3 V and current-limited to 1 mA. Connecting resistors (5–100 kΩ) from RT1/RT2 to VSS programs linearly scalable delays from ~100 ns to ~750 ns per channel. The timers can be bypassed by pulling either RT pin below 1.8 V, allowing minimum-delay operation when needed.

Does the LM5102MM/NOPB require an external bootstrap diode?

No, the LM5102MM/NOPB integrates a bootstrap diode with 0.85-V forward voltage at 100 mA and 0.6-V at 100 µA. This eliminates the need for an external diode in most designs, reducing component count and PCB area. However, for high-frequency (>1 MHz) or high-current (>10 A) applications, an external Schottky diode with lower VF and faster recovery may be added in parallel to reduce diode conduction loss and thermal stress on the IC.

What are the UVLO thresholds and hysteresis values for VDD and HB rails on the LM5102MM/NOPB?

The LM5102MM/NOPB features dual independent UVLO circuits: VDD UVLO triggers at 6.9 V (rising) with 0.5-V hysteresis, and HB UVLO triggers at 6.6 V (rising) with 0.4-V hysteresis. These thresholds ensure the low-side driver remains active during bootstrap recharge cycles, while disabling only the high-side output if HB falls below its threshold - preventing unsafe high-side conduction during insufficient bootstrap voltage.

What package type and thermal characteristics apply to the LM5102MM/NOPB?

The LM5102MM/NOPB uses the VSSOP-10 (DGS) package - 3.0 mm × 3.0 mm body, 0.5-mm pitch, with exposed thermal pad. Its junction-to-ambient thermal resistance (R_θJA) is 165.3°C/W on a standard 2-layer board, but drops to 37.9°C/W on a 4-layer board with proper thermal vias to ground. The exposed pad must be soldered to a PCB ground plane to achieve rated power dissipation and reliability.