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Texas Instruments LM5102SD/NOPB
- Part No.:
- LM5102SD/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
LM5102SD/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10WSON
- Quantity:
- Payment:
- Shipping:
Inventory:824
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Product details
Overview
LM5102SD/NOPB from Texas Instruments is a high-voltage half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge topologies. It supports up to 100 V HS voltage, features programmable rising-edge delays (100–750 ns) via RT1/RT2 resistors, integrates a bootstrap diode, and delivers 1.6 A peak source/sink current with 15 ns rise/fall times into 1000-pF loads.
For engineers reviewing the LM5102SD/NOPB datasheet, LM5102SD/NOPB pinout, LM5102SD/NOPB application, or LM5102SD/NOPB equivalent, key selection criteria include bootstrap rail capability (up to 118 V), independent UVLO on VDD and HB rails, TTL-compatible inputs, and WSON-10 package thermal performance for high-density power stage layouts.
Technical Context
The LM5102SD/NOPB employs a robust level-shifting architecture to drive the floating high-side output (HO) referenced to HS, enabling operation with HS voltages up to 100 V. Its dual independent delay timers-each biased at 3 V and current-limited to 1 mA-allow precise dead-time tuning across temperature (±150 ns variation over –40°C to +125°C).
Undervoltage lockout operates separately on VDD (6.9 V threshold, 0.5 V hysteresis) and HB (6.6 V threshold, 0.4 V hysteresis), ensuring safe startup and fault isolation. The integrated bootstrap diode (0.85 V typical forward drop at 100 mA) eliminates external diode requirements while maintaining <50 ns turn-off time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHS Range | –1 V to 100 V: Enables direct control of high-side MOSFETs in 48 V, 60 V, and 100 V bus applications without external level shifters. |
| Bootstrap Voltage (VHB–VHS) | Up to 118 V dc: Supports high-side gate drive in wide-input industrial and telecom power supplies. |
| Rising Edge Delay Range | 100 ns to 750 ns (RT = 5 kΩ to 100 kΩ): Allows fine-tuned dead-time adjustment to prevent shoot-through across diverse MOSFET gate charge profiles. |
| Peak Output Current | ±1.6 A (source/sink): Drives large gate capacitances (e.g., 43 nC MOSFETs) with minimal Miller plateau dwell time. |
| Propagation Delay (tHPHL/tLPHL) | 27 ns typical: Ensures tight timing alignment between high- and low-side switching edges for high-frequency (>500 kHz) operation. |
| UVLO Thresholds | VDD: 6.9 V (0.5 V hysteresis); VHB: 6.6 V (0.4 V hysteresis): Prevents erratic switching during brown-out or bootstrap capacitor discharge events. |
| Operating Temp Range | –40°C to +125°C junction: Validated for under-hood automotive DC-DC and industrial motor drive gate driver stages. |
Pinout & Package
LM5102SD/NOPB uses the WSON-10 (DPR) package: 4.00 mm × 4.00 mm body, exposed thermal pad, RoHS-compliant matte tin lead finish, MSL Level-1 (260°C peak reflow). The exposed pad must be soldered to PCB ground plane for thermal dissipation (RθJB = 14.9°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Positive gate drive supply input | Supplies low-side driver and logic; requires local 10× CBOOT bypass capacitor (e.g., 100 nF X7R) placed adjacent to pin. |
| VSS | Ground return reference | Common reference for all signals; must connect to low-inductance ground plane beneath exposed pad. |
| HI | High-side driver control input | TTL-compatible (VIL = 0.8 V, VIH = 2.2 V); unused pins must be tied to VSS to prevent noise-induced false triggering. |
| LI | Low-side driver control input | Same TTL thresholds as HI; independent control enables asymmetric PWM or burst-mode operation. |
| HO | High-side gate driver output | Drives MOSFET gate referenced to HS; connects directly to gate with shortest possible trace to minimize ringing. |
| LO | Low-side gate driver output | Drives MOSFET gate referenced to VSS; capable of 1.8 A pulldown current for fast turn-off. |
| HB | Bootstrap rail supply node | Connects to positive terminal of bootstrap capacitor; internal diode charges capacitor during LO conduction phase. |
| HS | High-side MOSFET source connection | Reference node for HO output and bootstrap capacitor negative terminal; must be low-inductance path to MOSFET source. |
| RT1 | High-side delay programming input | Resistor to VSS sets HO rising edge delay; 100 kΩ yields ~630 ns typical; sensitive to noise-place resistor within 2 mm of pin. |
| RT2 | Low-side delay programming input | Resistor to VSS sets LO rising edge delay; independent of RT1, enabling asymmetrical dead-time tuning. |
Key Features
| Feature | Design Value |
|---|---|
| Independent high/low-side rising-edge delay | Enables precise dead-time optimization per MOSFET-critical for ZVS/ZCS resonant converters and hard-switched bridges with mismatched Qg. |
| Integrated bootstrap diode | Eliminates external diode, reduces BOM count by one component, and minimizes layout area-verified for 100 mA continuous charging current. |
| Dual independent UVLO | Prevents partial drive activation: VDD UVLO blocks both outputs; HB UVLO disables only HO, preserving low-side control during bootstrap faults. |
| Fast 15 ns rise/fall times into 1000 pF | Reduces switching losses in high-frequency designs (e.g., >1 MHz GaN drivers) by minimizing time spent in linear region. |
| Robust level shifter | Operates reliably at >50 V/ns HS slew rates-validated for use with fast SiC and GaN MOSFETs without timing skew or shoot-through risk. |
Applications
| Motor Drive Half-Bridge | Telecom 48 V DC-DC |
|---|---|
Use Scenario: Driving N-channel MOSFETs in 3-phase inverter legs for BLDC motor control at 20–50 kHz switching frequency. IC Role / Device Role / Timing Role: High-side/low-side gate driver with independent delay tuning to compensate for gate charge asymmetry between upper/lower devices. Use Value: Eliminates need for discrete RC delay networks, reducing PCB area by ≥25% and improving thermal coupling between driver and MOSFETs. | Use Scenario: Isolated 48 V input to 12 V output synchronous buck converter in telecom rectifier systems. IC Role / Device Role / Timing Role: Half-bridge driver managing 100 V-rated high-side MOSFETs with bootstrap supply derived from secondary-side winding. Use Value: Integrated 118 V bootstrap capability enables single-stage conversion without auxiliary bias winding, cutting transformer complexity and cost. |
| Industrial PLC Power Stage | Automotive DC-DC Converter |
Use Scenario: Non-isolated 24 V input buck converter powering I/O modules in programmable logic controllers. IC Role / Device Role / Timing Role: Gate driver with programmable dead time to prevent shoot-through during transient load steps and EMI-sensitive factory environments. Use Value: Adjustable RT1/RT2 resistors allow field calibration of dead time without hardware change-reducing qualification cycles for multiple load variants. | Use Scenario: 12 V battery-fed bidirectional DC-DC for 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: High-reliability gate driver operating from –40°C to +125°C junction, with UVLO hysteresis preventing oscillation during cold-crank battery dips. Use Value: Dual UVLO ensures fail-safe shutdown if either VDD or bootstrap rail collapses-meeting ASIL-B functional safety requirements without external monitoring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5101SD/NOPB | No programmable delay; fixed 100 ns dead time; same WSON-10 package and 100 V HS rating. | Suitable for cost-sensitive designs where fixed dead time suffices and board space allows minor timing margin trade-off. | Select when delay tuning is unnecessary and BOM simplification is prioritized over timing flexibility. |
| UCC27211D | Higher 4 A peak current; no integrated bootstrap diode; requires external diode and larger layout area. | Better suited for high-power GaN/SiC applications demanding faster edge rates and higher drive strength. | Choose when driving >100 nC gate charges or requiring <10 ns propagation delay-accepting added component count and layout complexity. |
Compared with LM5101SD/NOPB, LM5102SD/NOPB adds critical design flexibility through independent RT-programmable delays, while UCC27211D trades integration for raw drive capability-making LM5102SD/NOPB optimal for mid-power industrial and telecom converters balancing precision, size, and reliability.
Availability
LM5102SD/NOPB is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive 48 V power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for LM5102SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.
The LM5102 product line targets high-efficiency, high-density power conversion systems-specifically engineered to simplify half-bridge and synchronous buck gate drive with integrated bootstrap functionality and precision timing control.
FAQ
What is the maximum allowable voltage difference between HB and HS pins on the LM5102SD/NOPB?
The LM5102SD/NOPB specifies an absolute maximum VHB–VHS rating of 118 V dc. This defines the maximum bootstrap capacitor voltage it can sustain during operation. Exceeding this value risks permanent damage to the internal high-side level shifter and bootstrap diode. Designers must ensure that the sum of VDD, bootstrap diode forward drop, and any ringing does not breach this limit-especially in high-dV/dt SiC or GaN circuits.
How does the LM5102SD/NOPB handle undervoltage conditions on its high-side and low-side rails?
The LM5102SD/NOPB implements independent undervoltage lockout (UVLO) circuits: VDD UVLO triggers at 6.9 V (0.5 V hysteresis) and disables both HO and LO outputs; HB UVLO activates at 6.6 V (0.4 V hysteresis) and disables only HO while allowing LO to remain operational. This separation ensures safe recovery from bootstrap capacitor discharge without losing low-side control-critical for fault-tolerant power stage designs.
Can the LM5102SD/NOPB drive both high-side and low-side MOSFETs simultaneously in a synchronous buck configuration?
Yes, the LM5102SD/NOPB is explicitly designed for synchronous buck and half-bridge topologies. Its independently controlled HI and LI inputs allow complementary PWM signals to be applied-enabling simultaneous but non-overlapping high-side and low-side drive. The programmable RT1/RT2 delays ensure precise dead-time insertion to prevent shoot-through, even with MOSFETs exhibiting different gate charge characteristics.
What thermal considerations apply to the LM5102SD/NOPB in the WSON-10 package?
The LM5102SD/NOPB in WSON-10 (DPR) has RθJB = 14.9°C/W and RθJC(bot) = 4.4°C/W when the exposed thermal pad is soldered to a solid ground plane. To maintain TJ ≤ 125°C at full load, designers must provide ≥200 mm² of 1-oz copper connected to the pad, avoid thermal vias under the IC body, and ensure ambient temperature remains ≤ 85°C with adequate airflow or heatsinking.
Is an external bootstrap diode required when using the LM5102SD/NOPB?
No, the LM5102SD/NOPB integrates a bootstrap diode rated for 100 mA continuous forward current and 0.85 V typical forward drop at 100 mA. However, in high-frequency (>1 MHz) or high-current (>5 A) applications where diode conduction losses dominate thermal budget, adding a parallel Schottky diode (e.g., PMEG3010CEH) with lower VF and faster recovery can reduce total power dissipation and improve efficiency.
LM5102SD/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 9V ~ 14V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.2V
- Current - Peak Output (Source, Sink):
- 1.6A, 1.6A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 118 V
- Rise / Fall Time (Typ):
- 600ns, 600ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-WSON (4x4)
LM5102SD/NOPB FAQ
1.How can I place an order for LM5102SD/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5102SD/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5102SD/NOPB reliable?
The price and inventory of LM5102SD/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5102SD/NOPB is usually 5 days.
3.What payment methods are accepted for LM5102SD/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5102SD/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5102SD/NOPB?
LM5102SD/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5102SD/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5102SD/NOPB?
For technical support, including LM5102SD/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5102SD/NOPB requirements.
6.How does Aetrix verify that LM5102SD/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5102SD/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5102SD/NOPB meets industry standards.
7.What is the process for return or replacement of LM5102SD/NOPB?
All LM5102SD/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5102SD/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5102SD/NOPB part is unused and in its original packaging.
Return procedure for LM5102SD/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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