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Texas Instruments LM5104SD/NOPB

Part No.:
LM5104SD/NOPB
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
10-WDFN Exposed Pad
Datasheet:
AetrixLM5104SD/NOPB.pdf
Description:
IC GATE DRVR HALF-BRIDGE 10WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

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Product details

Overview

LM5104SD/NOPB from Texas Instruments is a high-voltage half-bridge gate driver IC designed to control N-channel MOSFETs in synchronous buck, half-bridge, and active-clamp forward converters. It integrates adaptive shoot-through protection, a bootstrap diode (VDH = 1.1 V max), 100-V HS voltage rating, 25-ns typical turnoff propagation delay, and programmable deadtime via RT pin (90–270 ns range). It operates with VDD from 9 V to 14 V and supports 1000-pF loads with 15-ns rise/fall times.

For engineers reviewing the LM5104SD/NOPB datasheet, LM5104SD/NOPB pinout, LM5104SD/NOPB application, or LM5104SD/NOPB equivalent, this page delivers verified technical context for high-side/low-side gate drive selection in high-voltage DC-DC power stages - including bootstrap timing constraints, UVLO thresholds (VDDR = 6.9 V typ), thermal limits (TJ = 125°C max), and WSON-10 package layout considerations.

Technical Context

The LM5104SD/NOPB implements adaptive shoot-through protection by monitoring LO and HO gate voltages and triggering a programmable deadtime timer when either falls below ≈VDD/2. Its integrated level shifter enables robust high-speed signal translation from logic-level IN to floating high-side driver, consuming low quiescent current (IHB = 0.2 mA typ at 25°C).

Undervoltage lockout operates independently on VDD (6.9 V rising threshold, 0.5 V hysteresis) and HB rail (6.6 V rising threshold, 0.4 V hysteresis), disabling respective outputs during fault conditions. The internal bootstrap diode (RD = 1.5 Ω max, VDH = 1.1 V max at 100 mA) charges the external bootstrap capacitor, enabling operation up to 100 V on HS node.

Key Specifications

Parameter Value and Actual Design Meaning
VDD Operating Range 9 V to 14 V - defines minimum gate drive voltage for reliable MOSFET enhancement and UVLO release.
HS Voltage Rating −1 V to 100 V - supports high-side switching in 48-V, 60-V, and 100-V bus applications without external level-shifting circuitry.
HO/LO Propagation Delay 25 ns typical (tLPHL/tHPHL) - ensures tight timing control for high-frequency PWM (≥500 kHz) with minimal skew between channels.
Bootstrap Diode VF 0.85–1.1 V at 100 mA - determines minimum voltage drop during bootstrap recharge, directly impacting achievable HB rail voltage under load.
RT-Programmed Deadtime 90–270 ns (RT = 10 kΩ to 100 kΩ) - provides design-adjustable blanking interval to prevent simultaneous conduction in half-bridge topologies.
UVLO Hysteresis (VDD) 0.5 V - prevents oscillation during slow-rising supply conditions, ensuring clean startup and shutdown sequencing.
Thermal Resistance (RθJA) 37.9 °C/W (WSON-10) - enables ~1.5 W continuous power dissipation at TA = 85°C with standard PCB copper area.

Pinout & Package

LM5104SD/NOPB is housed in a 4-mm × 4-mm, 10-pin WSON (DPR) package with exposed thermal pad. Pin 1 is marked by a dot; pins are numbered counterclockwise. The exposed pad must be soldered to a thermal land for optimal junction-to-board heat transfer (RθJB = 14.9 °C/W).

Pin/Terminal Circuit Role Design Meaning
VDD (Pin 1) Low-side gate driver supply input Must be locally decoupled to VSS with low-ESR/ESL capacitor; powers logic, LO driver, and bootstrap charging circuitry.
HB (Pin 2) High-side bootstrap rail output Connects to positive terminal of bootstrap capacitor; voltage referenced to HS, not VSS - floats with high-side source.
HO (Pin 3) High-side gate driver output Drives gate of high-side N-MOSFET; output swing is VHB–VHO (0.35–0.55 V high-level, 0.25–0.4 V low-level).
HS (Pin 4) High-side source reference Connects to source of high-side MOSFET and negative terminal of bootstrap capacitor; serves as local ground for HO driver.
RT (Pin 5) Deadtime programming input Resistor to ground sets adaptive delay timer; 10 kΩ → 90 ns, 100 kΩ → 270 ns; placement near IC minimizes noise coupling.
IN (Pin 6) Single PWM input control Logic-high enables HO and disables LO; logic-low disables HO and enables LO - no external inversion required.
VSS (Pin 7) Ground return All internal references and low-side circuits tied here; must be low-inductance connection to system power ground plane.
LO (Pin 8) Low-side gate driver output Drives gate of low-side N-MOSFET; output swing is VDD–VLO (0.35–0.55 V high-level, 0.25–0.4 V low-level).
NC (Pins 9, 10) No-connect terminals Internally unconnected; must remain unpopulated or left floating - no routing or thermal tie required.

Key Features

Feature Design Value
Adaptive shoot-through protection Monitors LO/HO gate voltage transitions and inserts programmable deadtime only when needed - eliminates fixed blanking overhead and preserves maximum duty cycle.
Integrated bootstrap diode Enables single-supply bootstrap operation without external diode; reduces BOM count and PCB area while maintaining VHB ≥ 7.1 V under UVLO condition.
Dual independent UVLO Separate VDD and HB undervoltage detection prevents partial operation - HO disabled if HB < 6.6 V, while LO remains functional if VDD is valid.
SOIC-8 and WSON-10 packaging LM5104SD/NOPB uses compact 4-mm × 4-mm WSON-10 with exposed thermal pad - improves thermal performance over SOIC-8 (RθJA reduced from 114.5 to 37.9 °C/W).
Fast 15-ns rise/fall times Drives 1000-pF loads with minimal gate resistance, enabling efficient switching of high-Qg MOSFETs (e.g., CSD18531Q5A, Qg = 43 nC) at 200 kHz.

Applications

Industrial Motor Drives Telecom DC-DC Converters

Use Scenario: Driving half-bridge IGBTs/MOSFETs in 48-V input motor control inverters for HVAC blowers and servo amplifiers.

IC Role / Device Role / Timing Role: Provides isolated high-side gate drive with adaptive deadtime to prevent shoot-through during rapid direction reversal.

Use Value: Enables >98% efficiency at 100-kHz switching with 100-V HS capability and no external level shifter or bootstrap diode required.

Use Scenario: Gate driving synchronous rectifiers in 36–75-V telecom intermediate bus converters (IBCs) delivering 12 V/50 A.

IC Role / Device Role / Timing Role: Controls high-side N-MOSFET using bootstrap architecture while maintaining precise deadtime control across line/load transients.

Use Value: Reduces conduction loss vs. P-MOSFET solutions and avoids shoot-through risk during burst-mode light-load operation.

Active-Clamp Forward PSUs EV On-Board Chargers (OBC)

Use Scenario: Driving primary-side switches in active-clamp forward converters used in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Delivers fast, matched HO/LO edges with programmable deadtime to manage clamp capacitor reset timing and minimize voltage spikes.

Use Value: Supports 100-V HS rating and 25-ns propagation delay to maintain ZVS operation up to 300 kHz with low EMI.

Use Scenario: Controlling high-side/low-side MOSFETs in dual-phase interleaved buck stages of 6.6-kW OBC AC/DC front-ends.

IC Role / Device Role / Timing Role: Serves as dedicated gate driver for each phase's half-bridge, leveraging adaptive timing to handle asymmetric load sharing.

Use Value: WSON-10 thermal performance (RθJB = 14.9 °C/W) sustains 200-kHz operation with 1.8-A peak output current per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate drive applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27201DR Higher drive strength (4-A sink/source), no integrated bootstrap diode, requires external diode and higher VDD (up to 17 V). Better suited for high-current, high-frequency (>1 MHz) designs where bootstrap diode losses must be minimized. Select UCC27201DR when gate charge exceeds 60 nC or when operating above 1 MHz; LM5104SD/NOPB preferred for cost-sensitive, space-constrained ≤500-kHz designs.
IR2110PbF Higher HV rating (600 V), no adaptive deadtime, fixed 500-ns deadtime, larger SOIC-16 package, no integrated bootstrap diode. Targeted at high-voltage industrial inverters and motor drives requiring >200-V HS operation. Choose IR2110PbF for >200-V bus applications; LM5104SD/NOPB offers superior integration and thermal performance for ≤100-V systems.

Compared with UCC27201DR and IR2110PbF, LM5104SD/NOPB uniquely combines adaptive shoot-through protection, integrated bootstrap diode, and WSON-10 thermal efficiency - making it optimal for compact, high-reliability 48–100-V DC-DC converters where BOM reduction and layout simplicity are critical.

Availability

LM5104SD/NOPB is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and active-clamp forward power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant WSON packaging.

Supply support for LM5104SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power IC design.

The LM5104SD/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for efficient, shoot-through-resistant control of N-channel MOSFETs in isolated and non-isolated DC-DC topologies up to 100 V.

FAQ

What is the maximum allowable high-side voltage for LM5104SD/NOPB?

The LM5104SD/NOPB supports a high-side voltage range of −1 V to 100 V relative to VSS. This allows direct use in 48-V, 60-V, and 100-V bus applications without external level-shifting circuitry. Operation beyond 100 V risks exceeding absolute maximum ratings and may cause permanent damage. The device's internal level shifter and bootstrap architecture are validated only within this specified range.

How does the adaptive shoot-through protection work in LM5104SD/NOPB?

The LM5104SD/NOPB monitors LO and HO gate voltages in real time. When either output crosses ≈VDD/2 during transition, it triggers an adaptive deadtime timer set by the RT resistor. This ensures deadtime is applied only when needed - unlike fixed-delay drivers - preserving maximum duty cycle while preventing simultaneous conduction. The LM5104SD/NOPB achieves this without external components or configuration registers.

Can LM5104SD/NOPB drive MOSFETs with gate charge greater than 43 nC?

Yes, the LM5104SD/NOPB can drive MOSFETs with gate charge exceeding 43 nC - its 1.6-A peak pull-up and 1.8-A peak pull-down current capability supports Qg up to ~60 nC at 200 kHz with acceptable rise/fall times. For higher Qg or faster switching, external gate resistors may be added to tune dV/dt, but the LM5104SD/NOPB itself remains fully capable without derating.

What is the purpose of the NC pins on LM5104SD/NOPB?

Pins 9 and 10 of the LM5104SD/NOPB are no-connect (NC) terminals - they are internally unconnected and serve no electrical function. These pins must remain unpopulated and unconnected on the PCB. They do not require grounding, thermal ties, or routing; their presence accommodates package standardization and die layout constraints, not functionality.

Does LM5104SD/NOPB require an external bootstrap diode?

No, LM5104SD/NOPB integrates a high-voltage bootstrap diode (VDH ≤ 1.1 V at 100 mA) to charge the external bootstrap capacitor from VDD. An external diode is optional and only recommended in high-efficiency or high-frequency designs where internal diode conduction losses must be minimized. When used, it must be placed adjacent to the IC to avoid added inductance.

LM5104SD/NOPB Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
10-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
9V ~ 14V
Logic Voltage - VIL, VIH:
0.8V, 2.2V
Current - Peak Output (Source, Sink):
1.6A, 1.6A
Input Type:
Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):
118 V
Rise / Fall Time (Typ):
600ns, 600ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-WSON (4x4)

LM5104SD/NOPB FAQ

1.How can I place an order for LM5104SD/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM5104SD/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM5104SD/NOPB reliable?

The price and inventory of LM5104SD/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5104SD/NOPB is usually 5 days.

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LM5104SD/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM5104SD/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM5104SD/NOPB?

For technical support, including LM5104SD/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5104SD/NOPB requirements.

6.How does Aetrix verify that LM5104SD/NOPB is sourced from the original manufacturer or authorized distributors?

All LM5104SD/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5104SD/NOPB meets industry standards.

7.What is the process for return or replacement of LM5104SD/NOPB?

All LM5104SD/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5104SD/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM5104SD/NOPB part is unused and in its original packaging.

Return procedure for LM5104SD/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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