Texas Instruments LM5107MA/NOPB

Overview

LM5107MA/NOPB from Texas Instruments is a 100-V, 1.4-A peak dual-channel high- and low-side N-channel MOSFET gate driver in SOIC-8 package, featuring independent TTL-compatible HI/LI inputs, integrated bootstrap diode, 27-ns typical propagation delay, and dual UVLO (VDD and HB rails). It enables synchronous buck and half-bridge topologies in industrial DC/DC converters.

For engineers reviewing the LM5107MA/NOPB datasheet, LM5107MA/NOPB pinout, LM5107MA/NOPB application, or LM5107MA/NOPB equivalent, key selection criteria include bootstrap diode integration, 100-V HS rail capability, propagation delay matching (2-ns typical), TTL input compatibility, and SOIC-8 thermal performance (R_θJA = 109.6°C/W).

Technical Context

The LM5107MA/NOPB implements a robust level-shifter architecture to translate TTL logic from ground-referenced HI/LI inputs to the floating high-side driver referenced to HS, enabling clean 100-V rail switching with <50 V/ns slew rate tolerance. Its dual UVLO circuitry independently monitors VDD (6.9-V rising threshold) and HB–HS (6.6-V rising threshold) to prevent shoot-through during under-voltage conditions.

Each output stage delivers 1.4-A peak sink / 1.3-A peak source into 1000-pF loads with 15-ns rise/fall times, while the integrated bootstrap diode (0.9-V typical forward drop at 100 mA) supports self-biased operation up to 118-V HB supply. The device operates across –40°C to +125°C junction temperature with SOIC-8 package thermal metrics validated per JEDEC JESD51.

Key Specifications

Pinout & Package

LM5107MA/NOPB is housed in an 8-pin SOIC package (4.90 mm × 3.91 mm body size) with standard JEDEC MS-012AC footprint and exposed pad not present (WSON variant has exposed pad; SOIC does not).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual-channel gate driver applications.

Compared with UCC27201DR and IRS21844PbF, LM5107MA/NOPB provides the lowest component count solution for ≤100-kHz, ≤40-nC gate charge applications due to its integrated bootstrap diode and TTL input compatibility-reducing bill-of-materials cost and layout validation effort without sacrificing 100-V rail capability.

Availability

LM5107MA/NOPB is available at Aetrix Electronics and suitable for current-fed push-pull converters, half-bridge power converters, and solid-state motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for LM5107MA/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power IC design.

The LM5107MA/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for cost-effective, high-efficiency DC/DC and motor control topologies requiring integrated bootstrap functionality and robust 100-V HS operation.

FAQ

What is the maximum bootstrap supply voltage supported by the LM5107MA/NOPB?

The LM5107MA/NOPB supports a maximum HB-to-VSS voltage of 118 V DC, enabling operation with high bus voltages in industrial and telecom power supplies. This rating is specified in Absolute Maximum Ratings and verified across temperature; exceeding it risks permanent damage to the internal bootstrap diode and high-side driver circuitry. Always maintain HB–HS ≥ 8 V during normal operation per Recommended Operating Conditions.

Does the LM5107MA/NOPB require an external bootstrap diode?

No, the LM5107MA/NOPB integrates a high-voltage bootstrap diode (anode to VDD, cathode to HB) with 0.9-V typical forward drop at 100 mA. This eliminates the need for an external diode in most applications, reducing BOM count and PCB area. An external diode may be added in high-frequency, high-capacitance designs to reduce internal diode power dissipation, but it is not required for basic operation.

What are the UVLO thresholds for VDD and HB rails on the LM5107MA/NOPB?

The LM5107MA/NOPB features dual independent UVLO circuits: VDD rising threshold is 6.9 V (typical) with 0.5-V hysteresis, and HB–HS rising threshold is 6.6 V (typical) with 0.4-V hysteresis. These thresholds ensure both drivers remain disabled until stable bias is established-VDD UVLO holds both HO and LO low, while HB UVLO disables only HO to prevent high-side misfiring during bootstrap capacitor recharge.

Can the LM5107MA/NOPB drive MOSFETs with gate charges above 40 nC?

Yes, the LM5107MA/NOPB can drive MOSFETs with gate charges above 40 nC-its 1.4-A peak sink / 1.3-A peak source capability and 15-ns rise/fall times into 1000-pF loads enable efficient switching of devices like the CSD18531Q5A (Qg = 43 nC). For higher Qg devices, verify gate resistor selection and thermal margin using TI's LM5107MA/NOPB power dissipation equations in Section 8.2.3 of the datasheet.

Is the LM5107MA/NOPB pin-compatible with other TI gate drivers?

The LM5107MA/NOPB is explicitly stated as pin-compatible with the ISL6700 in its official datasheet Features section. It is not pin-compatible with UCC27201DR (different pinout, exposed pad) or IRS21844PbF (HO/LO pin positions swapped). Always verify mechanical and electrical compatibility using TI's official package drawings and logic tables before board-level substitution.