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Texas Instruments LM5109BSDX/NOPB
- Part No.:
- LM5109BSDX/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
LM5109BSDX/NOPB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8WSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,454
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Product details
Overview
LM5109BSDX/NOPB from Texas Instruments is a high-voltage, 1-A peak half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge power converters. It supports HB rail voltages up to 108 V DC, delivers 30 ns typical propagation delay with 2 ns matching, and features TTL/CMOS-compatible inputs for direct interface with PWM controllers in motor drives and DC-DC modules.
For engineers reviewing the LM5109BSDX/NOPB datasheet, LM5109BSDX/NOPB pinout, LM5109BSDX/NOPB application, or LM5109BSDX/NOPB equivalent, key selection criteria include bootstrap-capable high-side drive up to 90 V HS node, independent HI/LI logic control, UVLO on both VDD and HB rails, and SOIC-8 thermal performance (RθJA = 117.6°C/W).
Technical Context
The LM5109BSDX/NOPB integrates a robust level-shifting circuit that translates TTL/CMOS logic from ground-referenced HI/LI inputs to the floating high-side driver referenced to HS, enabling clean 15-ns rise/fall times into 1000-pF loads. Its dual UVLO monitors VDD–VSS (6.7 V rising threshold) and HB–HS (6.6 V rising threshold) independently-disabling HO only during HB undervoltage while maintaining LO operation.
Operation relies on external bootstrap diode and capacitor between HB and HS to sustain high-side gate drive; the IC does not integrate charge pump or internal diode. Output stages deliver ±1.0-A peak current with 0.38-V low-level output voltage at 100 mA sink, supporting fast switching of power MOSFETs in hard-switched topologies up to 500 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VHB max | 108 V DC - enables high-side drive in 90-V rail systems with margin for transients |
| Peak output current | ±1.0 A - sufficient to charge/discharge 1000-pF gate capacitance in ≤15 ns |
| Propagation delay (typ) | 30 ns - ensures tight timing control in high-frequency synchronous rectification |
| Delay matching (typ) | 2 ns - minimizes shoot-through risk by aligning HI→HO and LI→LO switching edges |
| UVLO thresholds | VDD: 6.7 V rising / 6.2 V falling; VHB–HS: 6.6 V rising / 6.2 V falling - prevents partial turn-on during brownout |
| Input compatibility | TTL and CMOS - accepts 1.8–5-V logic without level shifters in digital controller interfaces |
| RθJA (SOIC-8) | 117.6°C/W - defines thermal derating for continuous 1-A output in ambient ≤85°C |
Pinout & Package
LM5109BSDX/NOPB is packaged in an 8-pin SOIC (4.90 mm × 3.91 mm) with exposed pad not present; thermal performance relies on PCB copper area under body per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side gate drive supply | Provides 8–14 V bias for LO stage and internal logic; requires local 1-µF ceramic bypass to VSS |
| HI | High-side input | TTL/CMOS-compatible control signal; must be tied low if unused to prevent floating state |
| LI | Low-side input | Independent logic input for LO; floating state forces LO low per safety logic table |
| VSS | Power ground | Reference for LI, LO, and internal circuitry; separate from HS return path |
| LO | Low-side gate output | Sinks/sources 1 A to drive N-MOS gate; referenced to VSS, not HS |
| HS | High-side source node | Connects to source of high-side MOSFET and negative terminal of bootstrap capacitor |
| HO | High-side gate output | Drives high-side MOSFET gate referenced to HS; output swing limited by HB–HS voltage |
| HB | High-side bootstrap supply | Positive terminal of bootstrap capacitor; must exceed HS by ≥8 V for reliable HO operation |
Key Features
| Feature | Design Value |
|---|---|
| Independent HI/LI control logic | Enables non-overlapping, phase-shifted, or complementary drive schemes without external logic |
| Robust level-shifting architecture | Supports >90-V HS node with <2-ns propagation skew between HO and LO paths |
| Dual independent UVLO | Prevents HO activation during bootstrap capacitor discharge while allowing LO to remain functional |
| 1-A peak sink/source capability | Reduces external gate resistor requirements for 1000-pF MOSFETs in 500-kHz converters |
| SOIC-8 thermal design | 117.6°C/W RθJA enables 1-A continuous drive with ≤2.5 cm² 2-oz copper pour under package |
Applications
| Half-Bridge Power Converters | Current-Fed Push-Pull Converters |
|---|---|
Use Scenario: Isolated DC-DC conversion in telecom power supplies using complementary high-side/low-side N-MOS switches. IC Role / Device Role / Timing Role: Gate driver providing independent, matched-delay drive to upper and lower switches in hard-switched half-bridge topology. Use Value: 30-ns propagation and 2-ns matching reduce dead-time uncertainty, minimizing conduction loss and preventing shoot-through at 300–500 kHz. |
Use Scenario: High-efficiency isolated forward converter with active clamp and synchronous rectification in industrial SMPS. IC Role / Device Role / Timing Role: Dual-channel driver controlling two N-MOS switches in push-pull configuration with independent input control. Use Value: TTL/CMOS input compatibility allows direct connection to FPGA or microcontroller GPIOs without level translation. |
| Solid-State Motor Drives | Two-Switch Forward Converters |
Use Scenario: 24–48 V BLDC motor inverters requiring high-side gate drive above battery rail. IC Role / Device Role / Timing Role: Half-bridge driver enabling N-MOS high-side switching via bootstrap supply referenced to phase node. Use Value: 108-V HB rating supports 90-V HS transients common during motor phase commutation and regeneration. |
Use Scenario: Cost-optimized 48 V input, 12 V output forward converter with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Primary-side gate driver for two N-MOS switches operating in alternating duty cycle mode. Use Value: Independent HI/LI inputs allow precise control of switch timing to manage transformer reset and minimize core saturation risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844PbF | Higher 625-V max VBS, integrated bootstrap diode, 1.4-A peak output, but 60-ns propagation delay | Better suited for 400-V bus applications; less suitable where <35-ns timing precision is required | Select when higher voltage rating and integrated diode outweigh need for sub-35-ns delay |
| UCC27211D | 150-V max VDD, 4-A peak output, 12-ns propagation, but no dedicated HB/HS pins-requires external level shifter | Optimized for ultra-fast GaN FETs; lacks native bootstrap architecture for self-contained high-side drive | Select for GaN-based designs needing >2-A drive and <15-ns delay; avoid when bootstrap simplicity is critical |
Compared with IRS21844PbF and UCC27211D, LM5109BSDX/NOPB offers the best balance of 108-V HB tolerance, 30-ns timing precision, and native bootstrap support in SOIC-8-making it optimal for cost-sensitive 48–90-V industrial DC-DC and motor drive half-bridges.
Availability
LM5109BSDX/NOPB is available at Aetrix Electronics and suitable for half-bridge power converters, solid-state motor drives, and two-switch forward converters requiring stable component supply across automotive-grade temperature range (–40°C to +125°C).
Supply support for LM5109BSDX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with focus on reliability, efficiency, and system integration.
LM5109BSDX/NOPB belongs to TI's high-voltage gate driver product line, engineered specifically for cost-effective, robust control of N-channel MOSFETs in isolated and non-isolated DC-DC topologies up to 90-V rail.
FAQ
What is the maximum allowable voltage on the HB pin of the LM5109BSDX/NOPB?
The LM5109BSDX/NOPB specifies an absolute maximum HB-to-VSS voltage of 108 V DC. This rating allows safe operation with 90-V HS node potentials plus margin for transient overshoot. Exceeding 108 V risks permanent damage per Absolute Maximum Ratings. The recommended operating range is VHB = VHS + 8 V to VHS + 14 V, and HB must never drop below VHS – 0.3 V.
Does the LM5109BSDX/NOPB integrate a bootstrap diode?
No, the LM5109BSDX/NOPB does not integrate a bootstrap diode. An external fast-recovery or Schottky diode must be placed between VDD and HB to charge the bootstrap capacitor during low-side conduction. TI recommends selecting diodes per AN-1317 (SNVA083), with RBOOT = 2–10 Ω to limit inrush current and damp ringing on the HB node.
How does the LM5109BSDX/NOPB handle undervoltage conditions on the high-side supply?
The LM5109BSDX/NOPB implements independent UVLO on HB–HS with a 6.6-V rising threshold and 0.4-V hysteresis. If HB–HS falls below this threshold, only the HO output is disabled; LO remains fully functional. This allows continued low-side operation during bootstrap capacitor discharge, improving system fault resilience in half-bridge configurations.
Can the LM5109BSDX/NOPB drive both gates simultaneously in a synchronous buck converter?
Yes, the LM5109BSDX/NOPB supports simultaneous or complementary drive via independent HI and LI inputs. In synchronous buck applications, HI controls the high-side switch and LI controls the low-side switch. The logic table confirms that HI=H/LI=L yields HO=H/LO=L, and HI=L/LI=H yields HO=L/LO=H-enabling full control of both phases without external combinational logic.
What thermal considerations apply to the LM5109BSDX/NOPB in SOIC-8 package?
The LM5109BSDX/NOPB in SOIC-8 has RθJA = 117.6°C/W. At 1-A peak output and 12-V VDD, power dissipation reaches ~0.13 W quiescent + ~0.3 W dynamic (per datasheet Fig 4). To maintain TJ ≤125°C at 85°C ambient, ≥2.5 cm² of 2-oz copper connected to VSS and exposed inner layers is recommended. No exposed thermal pad is present in SOIC-8; heatsinking relies entirely on PCB layout.
LM5109BSDX/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 14V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.2V
- Current - Peak Output (Source, Sink):
- 1A, 1A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 108 V
- Rise / Fall Time (Typ):
- 15ns, 15ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WSON (4x4)
LM5109BSDX/NOPB FAQ
1.How can I place an order for LM5109BSDX/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5109BSDX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5109BSDX/NOPB reliable?
The price and inventory of LM5109BSDX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5109BSDX/NOPB is usually 5 days.
3.What payment methods are accepted for LM5109BSDX/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5109BSDX/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5109BSDX/NOPB?
LM5109BSDX/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5109BSDX/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5109BSDX/NOPB?
For technical support, including LM5109BSDX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5109BSDX/NOPB requirements.
6.How does Aetrix verify that LM5109BSDX/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5109BSDX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5109BSDX/NOPB meets industry standards.
7.What is the process for return or replacement of LM5109BSDX/NOPB?
All LM5109BSDX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5109BSDX/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5109BSDX/NOPB part is unused and in its original packaging.
Return procedure for LM5109BSDX/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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