Texas Instruments LM5110-1M/NOPB

Overview

LM5110-1M/NOPB from Texas Instruments is a dual noninverting 5-A compound gate driver IC for high-speed N-channel MOSFET switching in power converters. It delivers 5-A sink / 3-A source peak current per channel, supports ±4-V output swing relative to IN_REF (VEE down to −4 V), and achieves 25-ns typical propagation delay with 14-ns rise/12-ns fall times into 2-nF load - enabling efficient synchronous rectification in high-frequency DC/DC and AC/DC supplies.

For engineers reviewing the LM5110-1M/NOPB datasheet, LM5110-1M/NOPB pinout, LM5110-1M/NOPB application, or LM5110-1M/NOPB equivalent, key selection criteria include negative-output capability (VEE < IN_REF), TTL-compatible dual inputs with dedicated IN_REF ground, SOIC-8 pinout compatibility with legacy drivers, and compound MOS/bipolar output architecture for stable drive current across voltage and temperature.

Technical Context

The LM5110-1M/NOPB implements two independent, matched totem-pole output stages-each combining parallel MOS and bipolar transistors-to sustain 5-A sink/3-A source into capacitive gate loads while minimizing current variation over −40°C to +125°C and 3.5–14-V VCC–IN_REF range. Its level-shifting input stage references IN_REF, while outputs swing rail-to-rail between VCC and VEE, enabling split-supply operation with negative gate bias.

Undervoltage lockout (2.9-V turn-on threshold, 230-mV hysteresis) disables both channels if VCC–IN_REF drops below specification, and the TTL-compatible SHDN pin reduces supply current to 25 µA in shutdown mode. Pin 1 (IN_REF) is a dedicated input ground-not NC-enabling robust noise isolation between logic and power grounds.

Key Specifications

Pinout & Package

LM5110-1M/NOPB is housed in an SOIC-8 package (4.90 mm × 3.91 mm) with exposed pad not present; thermal performance characterized at R_θJA = 114°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual gate driver applications.

Compared with LM5110-1SD/NOPB, the LM5110-1M/NOPB trades thermal efficiency for legacy SOIC-8 footprint compatibility; versus UCC27524ADRV, it adds negative-drive capability and tighter current matching at the cost of slightly higher quiescent current - making it preferred for high-reliability, high-noise power conversion.

Availability

LM5110-1M/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, high-frequency DC/DC converters, and motor phase drivers requiring stable component supply, long-term manufacturability, and TI's industry-standard quality assurance.

Supply support for LM5110-1M/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-reliability industrial and automotive-grade components.

The LM5110 product line delivers high-current, high-speed gate drivers optimized for efficiency-critical power conversion - targeting synchronous rectification, isolated DC/DC, and motor control where negative gate bias and timing precision are essential.

FAQ

What is the maximum allowable voltage difference between VCC and VEE for LM5110-1M/NOPB?

The absolute maximum rating for VCC to VEE is 15 V, but the recommended operating range is 3.5 V to 14 V. Exceeding 14 V risks reliability degradation; operation at 14 V is validated for continuous use with proper thermal design. The LM5110-1M/NOPB datasheet specifies VCC–VEE ≤ 14 V under Recommended Operating Conditions to ensure long-term stability and latch-up immunity.

Can LM5110-1M/NOPB drive both high-side and low-side N-MOSFETs in a half-bridge configuration?

Yes - LM5110-1M/NOPB can drive either topology. For low-side, connect VEE to system ground and use OUT_A/OUT_B directly. For high-side, tie IN_REF to controller ground and bias VEE to the MOSFET source potential (e.g., via bootstrap capacitor or isolated supply); the LM5110-1M/NOPB's level-shifted outputs then swing from VCC to that dynamic VEE reference.

Does LM5110-1M/NOPB require external pull-up or pull-down resistors on IN_A and IN_B?

No - LM5110-1M/NOPB has no internal pull-up or pull-down on IN_A or IN_B. However, unused inputs must be tied to IN_REF (logic low) or VCC (logic high) to prevent floating states that cause spurious output switching. The LM5110-1M/NOPB datasheet explicitly warns against leaving inputs unconnected due to TTL-compatible thresholds and lack of built-in biasing.

How does the compound output stage in LM5110-1M/NOPB improve thermal stability compared to standard CMOS drivers?

The LM5110-1M/NOPB compound stage pairs MOS and bipolar transistors: the MOS device provides rail-to-rail voltage swing and low on-resistance at high V_GS, while the bipolar device delivers high peak current near the MOSFET threshold voltage where MOS transconductance is weak. This synergy reduces total output resistance variation over temperature - measured as <±8% R_OL drift from −40°C to +125°C - unlike pure CMOS drivers whose R_DS(on) can vary >3× across the same range.

Is LM5110-1M/NOPB pin-compatible with industry-standard SOIC-8 gate drivers like TC4420 or MIC4420?

LM5110-1M/NOPB shares the same SOIC-8 footprint and pin count, but Pin 1 (IN_REF) is functional - unlike TC4420/MIC4420 where Pin 1 is NC. To achieve drop-in replacement, tie LM5110-1M/NOPB Pin 1 (IN_REF) to Pin 3 (VEE) on the PCB. This configures it for single-supply operation and matches legacy pinouts, preserving layout compatibility while enabling enhanced features.