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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Texas Instruments LM5110-1MX/NOPB

Name: LM5110-1MX/NOPB
Brand: Texas Instruments
SKU: LM5110-1MX/NOPB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: LM5110-1MX/NOPB

Manufacturer:: Texas Instruments

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: LM5110-1MX/NOPB.pdf

Description:: IC GATE DRVR LOW-SIDE 8SOIC

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Product details

Overview

LM5110-1MX/NOPB from Texas Instruments is a dual noninverting 5-A compound gate driver IC for high-speed N-channel MOSFET switching in power converters. It delivers 5-A sink / 3-A source peak current per channel, supports negative V_GS drive down to −4 V relative to IN_REF, and achieves 25-ns typical propagation delay with 14-ns rise/12-ns fall times into 2-nF load - enabling efficient synchronous rectification in high-frequency SMPS.

For engineers reviewing the LM5110-1MX/NOPB datasheet, LM5110-1MX/NOPB pinout, LM5110-1MX/NOPB application, or LM5110-1MX/NOPB equivalent, key selection criteria include dual noninverting logic configuration, SOIC-8 package compatibility with industry-standard gate drivers, independent TTL-compatible inputs, and split-supply capability via dedicated IN_REF and VEE pins.

Technical Context

The LM5110-1MX/NOPB implements a compound output stage combining parallel MOS and bipolar transistors per channel: the bipolar device delivers high peak current near MOSFET threshold voltage, while MOS devices ensure rail-to-rail swing from VCC to VEE. This architecture reduces output current variation across temperature (−40°C to +125°C) and supply voltage (3.5 V to 14 V).

Its dual noninverting configuration (–1 variant) enables direct PWM signal buffering without inversion, while separate IN_REF (input ground) and VEE (output ground) pins allow single-supply operation (IN_REF = VEE = system GND) or split-supply operation (VEE biased negative relative to IN_REF) for robust MOSFET turn-off with negative gate bias.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Configuration	Dual noninverting - preserves input logic polarity on both OUT_A and OUT_B for direct PWM interface.
Peak Sink/Source Current	5 A sink / 3 A source per channel - drives large gate capacitances (e.g., >2 nF) with fast switching transitions.
Propagation Delay	25 ns typical (IN to OUT) - enables precise timing control in high-frequency (>1 MHz) power stages.
Rise/Fall Time	14 ns / 12 ns into 2-nF load - minimizes switching losses in hard-switched topologies.
Supply Voltage Range	VCC to IN_REF: 3.5 V to 14 V - supports 5 V, 12 V, and 15 V gate drive rails with 1-V margin below absolute max.
UVLO Threshold	2.9 V rising (VCC–IN_REF), 230 mV hysteresis - prevents erratic operation during brown-out conditions.
Shutdown Current	25 µA max at nSHDN = 0 V - enables low-power fault recovery or soft-start sequencing.

Pinout & Package

LM5110-1MX/NOPB is housed in an SOIC-8 package (4.90 mm × 3.91 mm) with exposed pad thermal enhancement. Pin 1 (IN_REF) is a dedicated input ground reference, distinct from VEE (pin 3), enabling true split-supply operation.

Pin	Circuit Role	Design Meaning
1 (IN_REF)	Input ground reference	Reference point for TTL-compatible IN_A/IN_B thresholds; connects to controller ground in split-supply mode or to VEE in single-supply mode.
2 (IN_A)	Channel A input	TTL-compatible logic input (VIH = 2.2 V, VIL = 0.8 V); internal 18-µA pull-down ensures defined state when unused.
3 (VEE)	Output power ground	Return path for OUT_A/OUT_B current; can be biased up to −4 V relative to IN_REF for negative gate drive.
4 (IN_B)	Channel B input	Independent TTL-compatible input identical to IN_A; supports asynchronous or complementary drive.
5 (SHDN)	Shutdown control	Active-low TTL input (VSDR = 0.8–1.5 V); pulls <25 µA in shutdown, disabling both outputs.
6 (VCC)	Positive supply	Drives totem-pole outputs; requires local 100-nF + 220-nF ceramic bypass between VCC–IN_REF and VCC–VEE.
7 (OUT_A)	Channel A output	Compound driver output swinging from VCC to VEE; capable of 5-A sink/3-A source into capacitive loads.
8 (OUT_B)	Channel B output	Identical to OUT_A; channels may be paralleled (inputs and outputs tied) to deliver 10-A sink/6-A source.

Key Features

Feature	Design Value
Compound CMOS/Bipolar Output Stage	Combines MOS (rail-to-rail swing) and bipolar (high threshold-region current) devices to maintain stable drive strength across voltage and temperature.
Dedicated IN_REF Pin	Enables clean separation between logic-reference ground and high-current output ground - critical for noise immunity in mixed-signal power systems.
Negative V_GS Drive Capability	VEE can be biased up to −4 V relative to IN_REF, ensuring reliable MOSFET turn-off under high dv/dt or elevated junction temperature.
Parallel Operation Support	IN_A/IN_B and OUT_A/OUT_B can be shorted on PCB to double peak current (10-A sink), with <1% efficiency penalty vs dual-channel mode.
UVLO with Hysteresis	Prevents oscillatory behavior during supply ramp-up/down by holding outputs disabled until VCC–IN_REF exceeds 2.9 V with 230-mV hysteresis.

Applications

Synchronous Rectifier Gate Driver	High-Frequency SMPS Gate Driver
Use Scenario: Driving low-R_DS(on) N-channel MOSFETs as synchronous rectifiers in LLC resonant converters operating at 300–1000 kHz. IC Role / Device Role / Timing Role: Dual noninverting gate driver delivering matched 25-ns propagation delays to minimize dead-time uncertainty and prevent shoot-through. Use Value: Enables zero-voltage switching (ZVS) compliance by precisely controlling gate timing, reducing conduction losses by >15% vs diode rectification.	Use Scenario: Replacing legacy gate drivers in 48 V–12 V isolated DC/DC modules requiring fast, high-current gate drive for GaN or SiC half-bridges. IC Role / Device Role / Timing Role: High-speed buffer with 14-ns rise time that translates 3.3-V controller PWM signals to 12-V gate drive while maintaining sub-30-ns channel-to-channel skew. Use Value: Supports >1-MHz switching frequencies with minimal gate charge loss, improving power density by enabling smaller magnetics and output capacitors.
Solenoid Driver with Fast Turn-Off	Motor Phase Driver in BLDC Inverter
Use Scenario: Controlling automotive solenoid valves in fuel injection systems where rapid de-energization (<10 µs) is required to meet emission standards. IC Role / Device Role / Timing Role: Dual-channel driver using negative V_GS capability (VEE = −3 V) to actively pull gate below threshold and suppress inductive kickback-induced re-triggering. Use Value: Reduces valve release time by 40% versus positive-only drive, enabling precise fuel metering at high engine RPM.	Use Scenario: Driving high-side and low-side N-channel MOSFETs in 3-phase BLDC motor inverters for industrial pumps, where shoot-through prevention is critical. IC Role / Device Role / Timing Role: Dual noninverting driver providing independent, TTL-compatible inputs for commutation logic, with matched propagation delays ensuring consistent phase timing. Use Value: Eliminates need for external level shifters or discrete buffers, reducing BOM count and PCB area while maintaining <5-ns inter-channel skew.

Synchronous Rectifier Gate Driver

High-Frequency SMPS Gate Driver

Use Scenario: Driving low-R_DS(on) N-channel MOSFETs as synchronous rectifiers in LLC resonant converters operating at 300–1000 kHz.

IC Role / Device Role / Timing Role: Dual noninverting gate driver delivering matched 25-ns propagation delays to minimize dead-time uncertainty and prevent shoot-through.

Use Value: Enables zero-voltage switching (ZVS) compliance by precisely controlling gate timing, reducing conduction losses by >15% vs diode rectification.

Use Scenario: Replacing legacy gate drivers in 48 V–12 V isolated DC/DC modules requiring fast, high-current gate drive for GaN or SiC half-bridges.

IC Role / Device Role / Timing Role: High-speed buffer with 14-ns rise time that translates 3.3-V controller PWM signals to 12-V gate drive while maintaining sub-30-ns channel-to-channel skew.

Use Value: Supports >1-MHz switching frequencies with minimal gate charge loss, improving power density by enabling smaller magnetics and output capacitors.

Solenoid Driver with Fast Turn-Off

Motor Phase Driver in BLDC Inverter

Use Scenario: Controlling automotive solenoid valves in fuel injection systems where rapid de-energization (<10 µs) is required to meet emission standards.

IC Role / Device Role / Timing Role: Dual-channel driver using negative V_GS capability (VEE = −3 V) to actively pull gate below threshold and suppress inductive kickback-induced re-triggering.

Use Value: Reduces valve release time by 40% versus positive-only drive, enabling precise fuel metering at high engine RPM.

Use Scenario: Driving high-side and low-side N-channel MOSFETs in 3-phase BLDC motor inverters for industrial pumps, where shoot-through prevention is critical.

IC Role / Device Role / Timing Role: Dual noninverting driver providing independent, TTL-compatible inputs for commutation logic, with matched propagation delays ensuring consistent phase timing.

Use Value: Eliminates need for external level shifters or discrete buffers, reducing BOM count and PCB area while maintaining <5-ns inter-channel skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC27524ADR	Dual noninverting, 5-A sink/2.5-A source, no negative VEE capability, SOIC-8, 17-ns rise time.	Lacks split-supply support; unsuitable for negative gate bias applications requiring robust turn-off.	Select when only positive-only gate drive is needed and cost sensitivity outweighs negative-bias requirement.
LM5109BMX/NOPB	Dual noninverting, 1-A sink/1-A source, SOIC-8, no UVLO, no shutdown, 45-ns propagation delay.	Lower drive strength and slower timing limit use to low-frequency (<200 kHz), low-capacitance gate loads.	Select for cost-constrained, low-power auxiliary supplies where full 5-A capability is unnecessary.

Compared with UCC27524ADR and LM5109BMX/NOPB, LM5110-1MX/NOPB uniquely combines 5-A peak sink current, negative V_GS capability, and 25-ns propagation delay in SOIC-8 - making it the only option among the three qualified for high-frequency synchronous rectification with enhanced reliability under transient stress.

Availability

LM5110-1MX/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, high-frequency switch-mode power supplies, and solenoid/motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for LM5110-1MX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 90 years of innovation in industrial, automotive, and communications markets.

The LM5110 family was designed specifically for high-efficiency, high-frequency power conversion systems - targeting synchronous rectification, isolated DC/DC, and motor control applications where robust gate drive, negative bias capability, and thermal resilience are essential.

FAQ

What is the logic configuration of LM5110-1MX/NOPB?

The LM5110-1MX/NOPB features a dual noninverting output configuration: both OUT_A and OUT_B follow the logic state of their respective inputs (IN_A and IN_B) without inversion. This matches directly to standard PWM controller outputs and eliminates the need for external inverters in most synchronous rectifier and half-bridge applications. The –1 suffix explicitly denotes this noninverting behavior per the TI LM5110 device options table.

Can LM5110-1MX/NOPB drive MOSFET gates with negative voltage?

Yes, LM5110-1MX/NOPB supports negative gate drive by biasing VEE below IN_REF - up to −4 V relative to IN_REF - while maintaining VCC–VEE ≤ 14 V. This enables active pull-down of the MOSFET gate during turn-off, improving immunity to dv/dt-induced false turn-on in high-noise environments. The dedicated IN_REF and VEE pins provide galvanic separation essential for this functionality.

What is the maximum recommended capacitive load for LM5110-1MX/NOPB?

LM5110-1MX/NOPB is characterized for 2-nF load in its switching specifications (25-ns propagation, 14-ns rise), but supports larger loads in practice. TI's typical curves show stable operation up to 2200 pF with <30-ns rise/fall times. For loads exceeding 2.2 nF, parallel operation of both channels is recommended to maintain slew rate and reduce gate charge time without compromising timing accuracy.

Does LM5110-1MX/NOPB include undervoltage lockout protection?

Yes, LM5110-1MX/NOPB integrates an undervoltage lockout (UVLO) circuit that monitors VCC relative to IN_REF. Outputs are disabled when VCC–IN_REF falls below 2.3 V (rising threshold), and resume operation above 2.9 V, with 230-mV hysteresis to prevent chatter during supply transients. This protects downstream MOSFETs from partial turn-on and ensures reliable startup sequencing.

Is LM5110-1MX/NOPB pin-compatible with other industry-standard gate drivers?

LM5110-1MX/NOPB uses the SOIC-8 footprint of standard gate drivers, but differs in pin 1 function: IN_REF replaces the NC or VSS found on legacy parts. To achieve drop-in compatibility, connect IN_REF (pin 1) to VEE (pin 3) on the PCB - matching the pinout of conventional single-supply drivers while retaining full LM5110-1MX/NOPB functionality in that configuration.

LM5110-1MX/NOPB Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 3.5V ~ 14V

Logic Voltage - VIL, VIH:: 0.8V, 2.2V

Current - Peak Output (Source, Sink):: 3A, 5A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 14ns, 12ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

LM5110-1MX/NOPB FAQ

1.How can I place an order for LM5110-1MX/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM5110-1MX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM5110-1MX/NOPB reliable?

The price and inventory of LM5110-1MX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5110-1MX/NOPB is usually 5 days.

3.What payment methods are accepted for LM5110-1MX/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5110-1MX/NOPB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LM5110-1MX/NOPB?

LM5110-1MX/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM5110-1MX/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM5110-1MX/NOPB?

For technical support, including LM5110-1MX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5110-1MX/NOPB requirements.

6.How does Aetrix verify that LM5110-1MX/NOPB is sourced from the original manufacturer or authorized distributors?

All LM5110-1MX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5110-1MX/NOPB meets industry standards.

7.What is the process for return or replacement of LM5110-1MX/NOPB?

All LM5110-1MX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5110-1MX/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM5110-1MX/NOPB part is unused and in its original packaging.

Return procedure for LM5110-1MX/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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