Texas Instruments LM5110-1SD/NOPB

Overview

LM5110-1SD/NOPB from Texas Instruments is a dual noninverting 5-A compound gate driver IC for high-speed N-channel MOSFET gate control in switch-mode power supplies and synchronous rectifiers. It delivers 5-A sink / 3-A source peak current per channel, supports VCC-to-VEE output swing up to 14 V, features independent TTL-compatible inputs (IN_A/IN_B), and enables negative gate drive via isolated IN_REF and VEE pins - critical for robust MOSFET turn-off in high-noise or high-temperature environments.

For engineers reviewing the LM5110-1SD/NOPB datasheet, LM5110-1SD/NOPB pinout, LM5110-1SD/NOPB application, or LM5110-1SD/NOPB equivalent, key selection criteria include confirmed dual noninverting logic configuration, WSON-10 thermal performance (RθJA = 40.1°C/W), 25-ns typical propagation delay, compound MOS/bipolar output architecture for stable drive current across voltage/temperature, and dedicated IN_REF pin enabling split-supply operation with negative VGS capability.

Technical Context

The LM5110-1SD/NOPB implements two identical, independently controlled totem-pole output stages, each combining parallel MOS and bipolar transistors to deliver 5-A sink / 3-A source current while minimizing variation over temperature and supply voltage. Its input stage uses CMOS buffers referenced to IN_REF, with internal level-shifting circuitry enabling operation with either single-supply (IN_REF = VEE) or split-supply (IN_REF ≠ VEE) configurations.

Output swing spans VCC to VEE - where VEE may be up to 14 V below VCC - allowing true negative gate bias down to −4 V relative to IN_REF. The device integrates undervoltage lockout (UVLO) with 2.9-V turn-on threshold and 230-mV hysteresis, plus a TTL-compatible shutdown pin (SHDN) that reduces ICC to ≤25 µA when pulled low.

Key Specifications

Pinout & Package

LM5110-1SD/NOPB is housed in a thermally enhanced 4 mm × 4 mm WSON-10 package with exposed thermal pad (DPR suffix). Pin 1 (IN_REF) serves as dedicated input ground reference; Pins 5 and 6 are no-connect (NC) in this package variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual gate driver applications.

Compared with LM5110-1M/NOPB, the LM5110-1SD/NOPB offers 65% lower junction-to-ambient thermal resistance for higher continuous drive capability in space-constrained designs; versus UCC27524ADRV, it provides verified negative VGS support and superior current stability over temperature - critical for automotive and industrial 24/48-V systems.

Availability

LM5110-1SD/NOPB is available at Aetrix Electronics and suitable for switch-mode power supplies, synchronous rectifiers, and industrial motor drives requiring stable component supply, extended temperature operation (−40°C to +125°C), and high-reliability gate drive performance.

Supply support for LM5110-1SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company designing analog ICs, embedded processors, and system solutions for industrial, automotive, and communications markets.

The LM5110 product line delivers high-current, thermally optimized gate drivers for high-frequency power conversion - specifically engineered to replace legacy drivers with improved peak current, negative bias capability, and layout flexibility in SMPS, DC-DC, and motor control systems.

FAQ

What is the logic configuration of LM5110-1SD/NOPB?

The LM5110-1SD/NOPB is a dual noninverting gate driver: OUT_A follows IN_A and OUT_B follows IN_B with no polarity inversion. This configuration is explicitly designated by the "-1" suffix in the part number and confirmed in TI's Device Options table. It is ideal for synchronous buck controllers and half-bridge topologies where direct logic mapping simplifies timing design and eliminates external inverters.

Can LM5110-1SD/NOPB drive MOSFETs with negative gate voltage?

Yes. LM5110-1SD/NOPB supports negative VGS by separating input reference (IN_REF) from output ground (VEE). When VEE is biased −3 V relative to IN_REF, the outputs swing from VCC to VEE - delivering −3 V to the MOSFET gate during turn-off. This capability is validated in the Electrical Characteristics table (IN_REF to VEE = 0–4 V) and Functional Block Diagram, and is critical for noise-immune turn-off in high-dV/dt applications.

What is the thermal performance difference between LM5110-1SD/NOPB and LM5110-1M/NOPB?

LM5110-1SD/NOPB in WSON-10 has RθJA = 40.1°C/W, while LM5110-1M/NOPB in SOIC-8 has RθJA = 114°C/W - a 65% reduction. This allows LM5110-1SD/NOPB to dissipate ~2.8× more power at the same ambient temperature. The WSON package's exposed thermal pad and smaller footprint make it suitable for high-density power stages where board space and thermal headroom are constrained.

Does LM5110-1SD/NOPB support paralleling of its two output channels?

Yes. LM5110-1SD/NOPB channels are tightly matched (propagation delay mismatch <5 ns) and designed for safe paralleling: connect IN_A to IN_B and OUT_A to OUT_B to double peak drive current to 10 A sink / 6 A source. TI confirms this in Section 9.2.2.1 and specifies fast input edge rates (>20 V/µs) to prevent shoot-through. The WSON-10's symmetric thermal layout further ensures balanced current sharing.

What are the absolute maximum ratings for VCC–VEE and VCC–IN_REF on LM5110-1SD/NOPB?

Per the Absolute Maximum Ratings table, LM5110-1SD/NOPB supports VCC–VEE and VCC–IN_REF up to 15 V maximum, with recommended operating range of 3.5 V to 14 V. Exceeding 15 V risks permanent damage. The 14-V upper limit in Recommended Operating Conditions provides 1-V margin against transient spikes - a key design constraint for 12-V gate drive systems in automotive or industrial environments.