Texas Instruments LM5110-2M/NOPB

Overview

LM5110-2M/NOPB from Texas Instruments is a dual inverting gate driver IC designed to independently drive two N-channel MOSFETs in high-frequency switch-mode power supplies. It delivers 5-A sink / 3-A source peak current per channel, supports negative output voltage swing (V_EE down to −4 V relative to IN_REF), and features 25-ns typical propagation delay with 14-ns rise/12-ns fall times into 2-nF load - enabling robust synchronous rectification and fast-switching topologies.

For engineers reviewing the LM5110-2M/NOPB datasheet, LM5110-2M/NOPB pinout, LM5110-2M/NOPB application, or LM5110-2M/NOPB equivalent, key selection criteria include dual inverting logic configuration, compound MOS/bipolar output stage for stable drive across temperature/voltage, dedicated IN_REF and VEE pins for split-supply operation, and SOIC-8 package compatibility with industry-standard gate drivers.

Technical Context

The LM5110-2M/NOPB implements two identical, independently controlled inverting totem-pole output stages, each combining parallel MOS and bipolar transistors to maintain consistent 5-A sink/3-A source capability over −40°C to +125°C and 3.5–14-V V_CC–V_EE range. Its level-shifting architecture isolates input logic (referenced to IN_REF) from output drive rails (swinging between V_CC and V_EE), enabling true negative gate bias for enhanced MOSFET turn-off reliability.

It integrates TTL-compatible inputs with 0.8-V low / 2.2-V high thresholds, undervoltage lockout (2.9-V enable threshold with 230-mV hysteresis), and a dedicated shutdown pin (nSHDN) that reduces supply current to ≤25 µA. Pin 1 (IN_REF) is a functional ground reference - not NC - enabling single- or split-supply configurations without layout compromise.

Key Specifications

Pinout & Package

LM5110-2M/NOPB is housed in an SOIC-8 package (4.90 mm × 3.91 mm) with exposed pad thermal enhancement. Pin 1 is IN_REF - a functional input ground reference, not NC - critical for split-supply operation and pin-compatibility with legacy drivers when tied to VEE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual inverting gate driver applications.

Compared with LM5110-2SD/NOPB, LM5110-2M/NOPB trades thermal performance for SOIC-8 compatibility and ease of prototyping; versus UCC27524ADRV, it uniquely enables negative V_GS bias for improved reliability in high-noise environments - a distinction critical for synchronous rectification and isolated half-bridge designs.

Availability

LM5110-2M/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, high-frequency switch-mode power supplies, and solenoid/motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for LM5110-2M/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and power applications.

The LM5110 family was engineered specifically for high-efficiency, high-frequency power conversion - emphasizing robust gate drive, thermal resilience, and flexibility in single- or split-supply configurations for SMPS, synchronous rectification, and motor control.

FAQ

What logic configuration does the LM5110-2M/NOPB implement?

The LM5110-2M/NOPB implements dual inverting logic: a high input drives the corresponding output low, and a low input drives it high. This configuration is explicitly defined in TI's device options table and matches the "LM5110-2" part number suffix. Unlike LM5110-1 (dual noninverting) or LM5110-3 (mixed), the LM5110-2M/NOPB requires no external inverters for complementary gate drive in buck or half-bridge topologies.

Can the LM5110-2M/NOPB drive MOSFET gates with negative voltage?

Yes. The LM5110-2M/NOPB supports negative gate drive by referencing its outputs (OUT_A/OUT_B) to VEE, which can be biased up to −4 V relative to IN_REF. This enables true negative V_GS during MOSFET turnoff - a documented feature used to suppress Miller-induced shoot-through and improve noise immunity in high-dv/dt applications like synchronous rectification.

What is the maximum recommended capacitive load for the LM5110-2M/NOPB?

The LM5110-2M/NOPB is characterized for 2-nF loads in its switching specifications (14-ns rise/12-ns fall times), and typical performance curves extend to 2200 pF. While not explicitly rated for >5-nF loads, its 5-A sink/3-A source capability allows driving larger gate capacitances - however, rise/fall times will scale linearly with C_LOAD, and layout parasitics become critical above ~3 nF.

Does the LM5110-2M/NOPB require external pull-up or pull-down resistors on its inputs?

No. The LM5110-2M/NOPB inputs (IN_A and IN_B) have no internal pull-up or pull-down circuitry - unlike some variants (e.g., LM5110-1 has 18-µA pull-downs). TI explicitly states unused inputs must be tied to IN_REF or VCC to prevent spurious switching; floating inputs are prohibited and may cause erratic output behavior.

How does the shutdown function operate on the LM5110-2M/NOPB?

The LM5110-2M/NOPB shutdown pin (SHDN) is active-low: pulling it below 1.5 V disables both outputs and reduces total supply current to ≤25 µA. An internal 18-µA pullup to V_CC ensures the device powers up enabled if SHDN is left unconnected - TI recommends tying SHDN to V_CC when not used to prevent noise-induced shutdown.