Texas Instruments LM5110-2MX/NOPB
- Part No.:
- LM5110-2MX/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LM5110-2MX/NOPB.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
LM5110-2MX/NOPB from Texas Instruments is a dual-channel inverting gate driver IC designed to independently drive two N-channel MOSFETs in high-frequency power stages. It delivers 3-A source / 5-A sink peak current per channel, supports negative VGS bias down to VEE = −4 V relative to IN_REF, and achieves 25-ns typical propagation delay with 14-ns rise/12-ns fall times into 2-nF load - enabling efficient synchronous rectification and SMPS topologies.
For engineers reviewing the LM5110-2MX/NOPB datasheet, LM5110-2MX/NOPB pinout, LM5110-2MX/NOPB application, or LM5110-2MX/NOPB equivalent, key selection criteria include confirmed dual inverting logic configuration, compound MOS/bipolar output stage for stable drive across temperature, dedicated IN_REF and VEE pins enabling split-supply operation, and SOIC-8 package compatibility with industry-standard gate drivers.
Technical Context
The LM5110-2MX/NOPB implements two identical, independently controlled inverting totem-pole output stages, each combining parallel MOS and bipolar transistors to maintain >5-A sink and 3-A source capability over −40°C to +125°C and 3.5–14-V VCC–VEE range. Its input stage uses TTL-compatible thresholds (VIL = 0.8 V, VIH = 2.2 V) referenced to IN_REF, while outputs swing rail-to-rail between VCC and VEE, where VEE may be up to 4 V below IN_REF.
Functional modes include normal operation (enabled by VCC–IN_REF ≥ 2.9 V and SHDN ≥ 1.5 V), UVLO shutdown (VCC–IN_REF < 2.3 V), and low-power standby (SHDN < 1.5 V, ICCSD ≤ 25 µA). Propagation delays (td1/td2) and edge speeds are tightly matched between channels (<5 ns skew), supporting parallel operation for doubled drive current without layout-induced shoot-through.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC–VEE Range | 3.5 V to 14 V - sets usable gate-drive voltage swing and defines maximum VGS compliance for MOSFETs. |
| Peak Sink/Source Current | 5 A sink / 3 A source per channel - enables fast charging/discharging of large gate capacitances (e.g., >5 nF) at high switching frequencies. |
| Propagation Delay | 25 ns typical (IN to OUT) - ensures precise timing control in phase-shifted or synchronous rectifier topologies. |
| Rise/Fall Time | 14 ns / 12 ns into 2-nF load - minimizes switching losses and EMI generation during MOSFET transitions. |
| Input Thresholds | VIL = 0.8 V, VIH = 2.2 V - guarantees reliable interfacing with 3.3-V or 5-V PWM controllers without level shifting. |
| UVLO Threshold | 2.3 V (falling), 2.9 V (rising) - prevents erratic output behavior during brown-out conditions with 230-mV hysteresis. |
| Shutdown Current | ≤25 µA - allows safe disable during fault conditions without significant system power penalty. |
Pinout & Package
LM5110-2MX/NOPB is housed in an SOIC-8 package (4.90 mm × 3.91 mm body size) with gull-wing leads and standard JEDEC MS-012AC footprint. The package supports surface-mount reflow and provides thermal resistance RθJA = 114°C/W.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 (IN_REF) | Input ground reference | Reference node for all logic inputs; connects to controller ground in split-supply mode or to VEE in single-supply mode. |
| 2 (IN_A) | Inverting logic input A | TTL-compatible input driving OUT_A with inverted polarity; no internal pullup/pulldown. |
| 3 (VEE) | Output power ground | Return path for output current; may be biased negative relative to IN_REF to enable −4-V VGS turn-off. |
| 4 (IN_B) | Inverting logic input B | TTL-compatible input driving OUT_B with inverted polarity; electrically identical to IN_A. |
| 5 (SHDN) | Active-low shutdown control | Pulls below 1.5 V to disable both outputs and reduce supply current to ≤25 µA. |
| 6 (OUT_B) | Inverting output B | Drives external MOSFET gate between VCC and VEE; 3-A source / 5-A sink capability. |
| 7 (VCC) | Positive supply rail | Primary power input for output stage; requires local 100-nF + 220-nF ceramic bypass to IN_REF and VEE. |
| 8 (OUT_A) | Inverting output A | Drives external MOSFET gate between VCC and VEE; functionally identical to OUT_B. |
Key Features
| Feature | Design Value |
|---|---|
| Dual inverting logic configuration | Ensures complementary gate drive for synchronous buck or half-bridge topologies without external inverters. |
| Compound MOS/bipolar output stage | Maintains consistent 5-A sink current across −40°C to +125°C and 3.5–14-V supply range, reducing gate-drive variation vs. temperature. |
| Negative VGS capability (VEE ≤ IN_REF − 4 V) | Enables robust MOSFET turn-off in noisy environments or with low-threshold devices at high junction temperatures. |
| Pin-compatible with industry-standard drivers | SOIC-8 footprint allows drop-in replacement of legacy gate drivers; IN_REF tied to VEE enables single-supply operation. |
| Parallel operation support | IN_A/IN_B and OUT_A/OUT_B can be shorted to double drive current to 6-A source / 10-A sink with <5-ns inter-channel skew. |
Applications
| Synchronous Rectifier Gate Driver | Switch-Mode Power Supply Gate Driver |
|---|---|
Use Scenario: Driving low-RDS(on) N-channel MOSFETs in secondary-side synchronous rectification of isolated DC-DC converters. IC Role / Device Role: Dual inverting gate driver providing precise, high-current turn-on/turn-off control synchronized to primary-side PWM. Use Value: Enables >95% efficiency in 12-V/48-V telecom and server PSUs by eliminating Schottky diode conduction losses. | Use Scenario: Driving high-side and low-side N-MOSFETs in non-isolated buck, boost, or buck-boost regulators. IC Role / Device Role: High-speed, high-current gate driver delivering fast edge rates and tight propagation matching for duty-cycle accuracy. Use Value: Reduces switching losses and improves light-load efficiency in point-of-load (POL) converters operating up to 2 MHz. |
| Solenoid and Motor Driver Interface | High-Frequency Class-D Audio Amplifier Stage |
Use Scenario: Controlling N-channel H-bridge MOSFETs for brushed DC motor or solenoid actuation in industrial automation. IC Role / Device Role: Robust gate driver with negative VGS capability ensuring reliable turn-off despite inductive flyback transients. Use Value: Prevents shoot-through failure and extends MOSFET lifetime under repetitive 10-A inductive load switching. | Use Scenario: Driving gate nodes of power MOSFETs in high-fidelity Class-D audio amplifier output stages. IC Role / Device Role: Low-jitter, matched-delay dual driver minimizing dead-time uncertainty and THD in 300-kHz+ switching amplifiers. Use Value: Achieves <0.01% THD+N by eliminating gate-drive asymmetry that causes crossover distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual inverting gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5110-2M/NOPB | Same SOIC-8 package and electrical specs; differs only in tape-and-reel packaging (MX = 3.5-knife reel, M = tube). | No functional difference; MX variant optimized for automated SMT placement with tighter reel tension control. | Select LM5110-2MX/NOPB for high-volume production lines requiring consistent pick-and-place reliability. |
| UCC27524ADR | Single-supply-only design (no IN_REF/VEE separation); 4-A sink / 4-A source; 17-ns propagation delay. | Lacks negative VGS capability and split-supply flexibility; better suited for cost-sensitive, single-rail SMPS. | Choose UCC27524ADR only when negative bias is unnecessary and board space permits its smaller SOIC-8 footprint. |
Compared with LM5110-2M/NOPB, the LM5110-2MX/NOPB offers identical performance in a production-optimized reel format, while UCC27524ADR trades negative drive capability for higher source current and lower propagation delay in single-supply systems.
Availability
LM5110-2MX/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, switch-mode power supply gate drivers, and solenoid/motor drivers requiring stable component supply, long-term manufacturability, and TI-authorized traceability.
Supply support for LM5110-2MX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability analog ICs.
The LM5110 product line delivers high-current, thermally robust gate drivers for demanding power conversion applications - specifically engineered for synchronous rectification, high-frequency SMPS, and industrial motor control where negative VGS bias and tight channel matching are critical.
FAQ
What logic configuration does the LM5110-2MX/NOPB implement?
The LM5110-2MX/NOPB implements dual inverting logic: a high input on IN_A produces a low output on OUT_A, and a high input on IN_B produces a low output on OUT_B. This configuration is explicitly defined in TI's device options table and verified in the functional block diagram and truth table of the LM5110 datasheet. The "-2" suffix denotes this inverting behavior, distinguishing it from the -1 (dual noninverting) and -3 (mixed) variants. No external inversion is required when using LM5110-2MX/NOPB in synchronous rectifier or half-bridge topologies.
Can the LM5110-2MX/NOPB drive MOSFET gates with negative voltage?
Yes, the LM5110-2MX/NOPB supports negative gate drive via its separate IN_REF and VEE pins. When IN_REF is connected to controller ground and VEE is biased up to 4 V below IN_REF (e.g., −3 V), the outputs swing from VCC to VEE - enabling true negative VGS turn-off. This capability is confirmed in the "Turn-off with Negative Bias" section (8.3.3), absolute maximum ratings (IN_REF to VEE ≤ 5 V), and recommended operating conditions (IN_REF to VEE = 0–4 V). It directly enhances reliability in noisy or high-temperature environments.
What is the maximum capacitive load the LM5110-2MX/NOPB can drive reliably?
The LM5110-2MX/NOPB is characterized for 2-nF loads in its switching specifications (tr = 14 ns, tf = 12 ns), but its 5-A sink/3-A source capability supports larger loads in practice. TI's typical characteristics show stable operation up to 2200 pF with minimal degradation in rise/fall time. For loads exceeding 5 nF, parallel operation of both channels is recommended - doubling effective drive strength while maintaining matched timing. Layout parasitics (trace inductance, ground bounce) become dominant above ~10 nF, so careful PCB design is essential for reliable switching.
Does the LM5110-2MX/NOPB require external pull-up or pull-down resistors on its inputs?
No, the LM5110-2MX/NOPB inputs (IN_A and IN_B) have no internal pull-up or pull-down resistors - unlike some noninverting variants which include 18-µA pull-downs. Therefore, unused inputs must be externally tied to either IN_REF (logic low) or VCC (logic high) to prevent floating states that cause spurious output switching. This requirement is explicitly stated in Section 8.3.1 and Layout Guideline #5 of the datasheet. Leaving IN_A or IN_B unconnected risks unintended MOSFET turn-on and potential shoot-through failure.
How does the shutdown pin (SHDN) function on the LM5110-2MX/NOPB?
The SHDN pin on the LM5110-2MX/NOPB is an active-low TTL-compatible input that disables both output channels when pulled below 1.5 V, reducing total supply current to ≤25 µA. It features an internal 18-µA pull-up to VCC, so tying SHDN to VCC enables normal operation. The shutdown threshold (VSDR) and hysteresis (165 mV) are specified in Section 7.5. This function is validated for use in thermal overload, start-up sequencing, and fault protection - and is fully operational across the full −40°C to +125°C junction temperature range.
LM5110-2MX/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 3.5V ~ 14V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.2V
- Current - Peak Output (Source, Sink):
- 3A, 5A
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 14ns, 12ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
LM5110-2MX/NOPB FAQ
1.How can I place an order for LM5110-2MX/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5110-2MX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5110-2MX/NOPB reliable?
The price and inventory of LM5110-2MX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5110-2MX/NOPB is usually 5 days.
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5.How can I obtain technical support or documentation for LM5110-2MX/NOPB?
For technical support, including LM5110-2MX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5110-2MX/NOPB requirements.
6.How does Aetrix verify that LM5110-2MX/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5110-2MX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5110-2MX/NOPB meets industry standards.
7.What is the process for return or replacement of LM5110-2MX/NOPB?
All LM5110-2MX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5110-2MX/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5110-2MX/NOPB part is unused and in its original packaging.
Return procedure for LM5110-2MX/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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