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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Texas Instruments LM5110-2SD/NOPB

Name: LM5110-2SD/NOPB
Brand: Texas Instruments
SKU: LM5110-2SD/NOPB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: LM5110-2SD/NOPB

Manufacturer:: Texas Instruments

Category:: Gate Drivers

Package:: 10-WDFN Exposed Pad

Datasheet:: LM5110-2SD/NOPB.pdf

Description:: IC GATE DRVR LOW-SIDE 10WSON

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Product details

Overview

LM5110-2SD/NOPB from Texas Instruments is a dual-channel, inverting gate driver IC designed to independently drive two N-channel MOSFETs in high-efficiency power stages. It delivers 5-A sink / 3-A source peak current per channel, supports negative output voltage swing (VCC to VEE), features TTL-compatible inputs, and operates across 3.5–14 V supply range - enabling robust synchronous rectification in isolated DC/DC converters.

For engineers reviewing the LM5110-2SD/NOPB datasheet, LM5110-2SD/NOPB pinout, LM5110-2SD/NOPB application, or LM5110-2SD/NOPB equivalent, key selection criteria include verified dual inverting logic configuration, WSON-10 thermal performance (R_θJA = 40.1°C/W), negative V_GS capability for enhanced MOSFET turn-off reliability, and parallel operation support for doubled drive current.

Technical Context

The LM5110-2SD/NOPB implements compound CMOS-bipolar totem-pole outputs per channel, combining MOS transistors for rail-to-rail swing and bipolar devices for high peak current near V_GS(th). Its dedicated IN_REF and VEE pins enable true split-supply operation, allowing gate drive between VCC and a negative VEE (up to 14 V below VCC).

Each channel features independent TTL-compatible inputs with 400-mV hysteresis, undervoltage lockout (2.9-V rising threshold, 230-mV hysteresis), and a dedicated shutdown input (nSHDN) that reduces supply current to ≤25 µA. Propagation delays are tightly matched (25–40 ns typ.), supporting synchronized dual-channel or paralleled single-output configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Configuration	Dual inverting - both OUT_A and OUT_B invert respective IN_A/IN_B signals; required for complementary drive in synchronous buck or active clamp topologies.
Peak Sink/Source Current	5 A sink / 3 A source per channel - enables fast charging/discharging of large gate capacitances (e.g., >5 nF) at high switching frequencies (>1 MHz).
Propagation Delay	25–40 ns typical (C_L = 2 nF) - ensures minimal timing skew between channels, critical for shoot-through prevention in half-bridge designs.
Supply Range (VCC–IN_REF)	3.5 V to 14 V - supports 5-V, 12-V, and 15-V gate drive rails while maintaining UVLO protection down to 2.9 V.
Output Voltage Swing	VCC to VEE - allows negative gate bias (e.g., VEE = –3 V) to improve MOSFET off-state immunity against dV/dt-induced turn-on.
Package Thermal Resistance	R_θJA = 40.1°C/W (WSON-10) - enables higher continuous drive current vs SOIC-8 (114°C/W) without external heatsinking in compact power modules.

Pinout & Package

LM5110-2SD/NOPB is housed in a thermally enhanced 4 mm × 4 mm WSON-10 package with exposed thermal pad (pin 10). The package supports reflow soldering and provides low junction-to-board resistance (R_θJB = 17.3°C/W) for efficient heat dissipation in high-power density applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (IN_REF)	Input ground reference	Reference node for TTL input thresholds; connects to controller ground - isolates logic domain from power ground (VEE) to enable level shifting.
2 (IN_A)	Channel A logic input	Inverting input: high → OUT_A low, low → OUT_A high; no internal pullup/pulldown - must be actively driven or tied to IN_REF/VCC.
3 (VEE)	Output power ground	Sink return path for both outputs; may be connected to negative supply (e.g., –3 V) to generate negative V_GS during turn-off.
4 (IN_B)	Channel B logic input	Inverting input: identical behavior to IN_A; independent control enables asymmetric timing or fault isolation.
7 (OUT_A)	Channel A gate drive output	Drives MOSFET gate between VCC and VEE; capable of 5-A sink/3-A source into capacitive loads.
8 (VCC)	Positive supply rail	Primary power for output stage; requires local 100-nF + 220-nF ceramic bypass between VCC and IN_REF/VEE.
9 (OUT_B)	Channel B gate drive output	Functionally identical to OUT_A; matched propagation delay enables precise dual-MOSFET timing control.
5, 6 (NC)	No-connect terminals	Not bonded internally in WSON-10; must remain unconnected - no routing or copper fill allowed.

Key Features

Feature	Design Value
Compound CMOS-Bipolar Output Stage	Combines MOS (rail-to-rail swing) and bipolar (high peak current near V_GS(th)) devices to minimize drive current variation over temperature and supply voltage.
Negative V_GS Capability	Outputs swing from VCC to VEE, where VEE can be up to 14 V below VCC - enables robust MOSFET turn-off in noisy, high-dV/dt environments.
Parallel Operation Support	IN_A/IN_B and OUT_A/OUT_B can be shorted on PCB to double drive current (10-A sink/6-A source), with <1% efficiency penalty vs dual-channel mode.
Dedicated Input Ground (IN_REF)	Decouples logic reference from power ground (VEE), enabling single-supply (IN_REF = VEE) or split-supply (IN_REF = system GND, VEE = negative rail) configurations.
TTL-Compatible Inputs with Hysteresis	VIH = 2.2 V, VIL = 0.8 V, 400-mV hysteresis - rejects noise on control lines and prevents oscillation with slow-rising/falling PWM edges.

Applications

High-Efficiency Synchronous Rectification	Isolated DC/DC Converter Gate Drive
Use Scenario: Driving low-R_DS(on) N-channel MOSFETs as synchronous rectifiers in LLC or phase-shifted full-bridge converters operating at 300–1000 kHz. IC Role / Device Role: Dual inverting gate driver providing precise, matched timing to replace Schottky diodes - minimizing conduction losses while preventing shoot-through via controlled dead-time margins. Use Value: Enables >98% converter efficiency at full load by reducing rectifier losses; negative V_GS capability suppresses false turn-on during transformer leakage spikes.	Use Scenario: Driving primary-side MOSFETs in isolated flyback or forward converters where controller ground is separated from power ground. IC Role / Device Role: Level-shifting gate driver translating 3.3-V/5-V controller outputs to 12-V gate drive referenced to floating power ground (VEE). Use Value: Eliminates need for gate-drive transformers or optocouplers; IN_REF/VEE isolation simplifies PCB layout and improves EMI performance in compact adapters.
Motor Driver Half-Bridge Control	High-Speed Solenoid Actuation
Use Scenario: Controlling N-channel high-side/low-side MOSFET pairs in BLDC motor gate drivers requiring fast, matched turn-on/turn-off. IC Role / Device Role: Dual inverting driver generating complementary gate signals - OUT_A drives low-side, OUT_B drives high-side (with bootstrap or isolated supply). Use Value: Tight propagation matching (<15 ns skew) minimizes cross-conduction risk; 5-A sink current ensures rapid low-side discharge for clean commutation at >20 kHz.	Use Scenario: Driving high-inductance solenoids in industrial valves or automotive fuel injectors requiring fast, high-current turn-on pulses. IC Role / Device Role: High-current gate driver delivering 5-A peak sink to rapidly charge solenoid gate capacitance and achieve <100-ns rise time. Use Value: Reduces solenoid response latency by >40% vs standard drivers; WSON-10 thermal performance sustains repetitive 10-A peak pulses without derating.

High-Efficiency Synchronous Rectification

Isolated DC/DC Converter Gate Drive

Use Scenario: Driving low-R_DS(on) N-channel MOSFETs as synchronous rectifiers in LLC or phase-shifted full-bridge converters operating at 300–1000 kHz.

IC Role / Device Role: Dual inverting gate driver providing precise, matched timing to replace Schottky diodes - minimizing conduction losses while preventing shoot-through via controlled dead-time margins.

Use Value: Enables >98% converter efficiency at full load by reducing rectifier losses; negative V_GS capability suppresses false turn-on during transformer leakage spikes.

Use Scenario: Driving primary-side MOSFETs in isolated flyback or forward converters where controller ground is separated from power ground.

IC Role / Device Role: Level-shifting gate driver translating 3.3-V/5-V controller outputs to 12-V gate drive referenced to floating power ground (VEE).

Use Value: Eliminates need for gate-drive transformers or optocouplers; IN_REF/VEE isolation simplifies PCB layout and improves EMI performance in compact adapters.

Motor Driver Half-Bridge Control

High-Speed Solenoid Actuation

Use Scenario: Controlling N-channel high-side/low-side MOSFET pairs in BLDC motor gate drivers requiring fast, matched turn-on/turn-off.

IC Role / Device Role: Dual inverting driver generating complementary gate signals - OUT_A drives low-side, OUT_B drives high-side (with bootstrap or isolated supply).

Use Value: Tight propagation matching (<15 ns skew) minimizes cross-conduction risk; 5-A sink current ensures rapid low-side discharge for clean commutation at >20 kHz.

Use Scenario: Driving high-inductance solenoids in industrial valves or automotive fuel injectors requiring fast, high-current turn-on pulses.

IC Role / Device Role: High-current gate driver delivering 5-A peak sink to rapidly charge solenoid gate capacitance and achieve <100-ns rise time.

Use Value: Reduces solenoid response latency by >40% vs standard drivers; WSON-10 thermal performance sustains repetitive 10-A peak pulses without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
LM5110-2M/NOPB	SOIC-8 package; R_θJA = 114°C/W vs 40.1°C/W - limits continuous current in high-ambient environments.	Lacks thermal performance for compact, sealed enclosures; suitable only where board space permits larger footprint and airflow.	Select when legacy SOIC-8 layout compatibility is mandatory and thermal headroom exceeds 35°C.
UCC27524ADRV	Dual noninverting output; no IN_REF pin - requires single-supply operation only; lower peak sink (4 A) and no negative V_GS capability.	Cannot implement negative gate bias; unsuitable for high-noise synchronous rectifier or isolated gate drive where V_GS stability is critical.	Choose only for cost-sensitive, non-isolated, single-supply applications with moderate switching speed requirements.

Compared with LM5110-2M/NOPB, the LM5110-2SD/NOPB delivers 2.8× better thermal performance and fits in 43% less board area; versus UCC27524ADRV, it adds negative V_GS support and 25% higher sink current - making it uniquely suited for high-reliability, high-frequency power conversion where gate drive integrity is paramount.

Availability

LM5110-2SD/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, isolated DC/DC converter designs, and high-speed motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for LM5110-2SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies - with over 90 years of innovation in high-reliability, high-performance IC design.

The LM5110 product line was engineered specifically for high-efficiency power conversion systems requiring fast, high-current, thermally robust gate drive - targeting server PSUs, telecom rectifiers, and industrial motor drives where MOSFET switching integrity directly impacts system efficiency and reliability.

FAQ

What is the logic configuration of LM5110-2SD/NOPB?

The LM5110-2SD/NOPB features dual inverting outputs: a high input on IN_A produces a low output on OUT_A, and a high input on IN_B produces a low output on OUT_B. This configuration is explicitly confirmed in TI's Device Options table for part number LM5110-2SD, and is essential for driving complementary MOSFET pairs in topologies like synchronous buck or active clamp forward converters where inverted control signals are required.

Can LM5110-2SD/NOPB drive MOSFET gates with negative voltage?

Yes, LM5110-2SD/NOPB supports negative gate drive: its outputs swing from VCC to VEE, and VEE may be set up to 14 V below VCC (e.g., VCC = 12 V, VEE = –3 V). This capability is enabled by separate IN_REF (input ground) and VEE (output ground) pins, and is documented in the Functional Description, Absolute Maximum Ratings, and Typical Application sections of the LM5110 datasheet. Negative V_GS improves MOSFET turn-off robustness in high-dV/dt environments.

What package does LM5110-2SD/NOPB use, and how does it differ from LM5110-2M/NOPB?

LM5110-2SD/NOPB uses the WSON-10 (4 mm × 4 mm) package with an exposed thermal pad, whereas LM5110-2M/NOPB uses SOIC-8. The WSON-10 offers significantly lower thermal resistance (R_θJA = 40.1°C/W vs 114°C/W), enabling higher continuous output current in space-constrained layouts. Pin 10 is the thermal pad (must be soldered to PCB ground plane), and pins 5 and 6 are NC - all confirmed in the Pin Configuration and Functions section of the LM5110 datasheet.

Does LM5110-2SD/NOPB support parallel operation of its two channels?

Yes, LM5110-2SD/NOPB supports parallel operation: connecting IN_A to IN_B and OUT_A to OUT_B doubles peak drive capability to 10-A sink / 6-A source. TI specifies this in the Features and Detailed Description sections, noting <1% efficiency penalty and strict layout requirements - including shorting inputs/outputs as close to the IC as possible and using fast-rising input edges (>20 V/µs) to minimize mismatch-induced shoot-through.

What is the purpose of the IN_REF pin on LM5110-2SD/NOPB?

The IN_REF pin on LM5110-2SD/NOPB serves as the dedicated ground reference for TTL-compatible input buffers, electrically isolating the logic domain from the power domain (VEE). This enables flexible supply configurations: connecting IN_REF to VEE yields standard single-supply operation, while connecting IN_REF to system controller ground and VEE to a negative rail enables split-supply level shifting - a key differentiator versus conventional gate drivers lacking this pin.

LM5110-2SD/NOPB Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: -

Package/Case:: 10-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 3.5V ~ 14V

Logic Voltage - VIL, VIH:: 0.8V, 2.2V

Current - Peak Output (Source, Sink):: 3A, 5A

Input Type:: Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 14ns, 12ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-WSON (4x4)

LM5110-2SD/NOPB FAQ

1.How can I place an order for LM5110-2SD/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM5110-2SD/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM5110-2SD/NOPB reliable?

The price and inventory of LM5110-2SD/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5110-2SD/NOPB is usually 5 days.

3.What payment methods are accepted for LM5110-2SD/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5110-2SD/NOPB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LM5110-2SD/NOPB?

LM5110-2SD/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM5110-2SD/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM5110-2SD/NOPB?

For technical support, including LM5110-2SD/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5110-2SD/NOPB requirements.

6.How does Aetrix verify that LM5110-2SD/NOPB is sourced from the original manufacturer or authorized distributors?

All LM5110-2SD/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5110-2SD/NOPB meets industry standards.

7.What is the process for return or replacement of LM5110-2SD/NOPB?

All LM5110-2SD/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5110-2SD/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM5110-2SD/NOPB part is unused and in its original packaging.

Return procedure for LM5110-2SD/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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