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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Texas Instruments LM5110-3MX/NOPB

Name: LM5110-3MX/NOPB
Brand: Texas Instruments
SKU: LM5110-3MX/NOPB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: LM5110-3MX/NOPB

Manufacturer:: Texas Instruments

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: LM5110-3MX/NOPB.pdf

Description:: IC GATE DRVR LOW-SIDE 8SOIC

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Product details

Overview

LM5110-3MX/NOPB from Texas Instruments is a dual-channel compound gate driver IC with inverting Channel A and noninverting Channel B, delivering 5-A sink / 3-A source peak current per channel, 25-ns typical propagation delay, and negative output voltage capability (VEE down to −4 V relative to IN_REF). It drives N-channel MOSFETs in high-frequency synchronous rectifier and switch-mode power supply applications.

For engineers reviewing the LM5110-3MX/NOPB datasheet, LM5110-3MX/NOPB pinout, LM5110-3MX/NOPB application, or LM5110-3MX/NOPB equivalent, key selection criteria include independent TTL-compatible inputs, split-supply operation support via dedicated IN_REF and VEE pins, rail-to-rail output swing (VCC to VEE), shutdown control (SHDN), and SOIC-8 package compatibility with industry-standard gate drivers.

Technical Context

The LM5110-3MX/NOPB implements a compound output stage combining MOS and bipolar transistors in parallel per channel to maintain stable drive current across temperature and output voltage range - bipolar devices deliver high peak current near MOSFET threshold, while MOS devices ensure rail-to-rail swing. Its dual independent logic inputs (IN_A, IN_B) reference IN_REF, and outputs (OUT_A, OUT_B) swing between VCC and VEE, enabling true negative gate bias for robust MOSFET turn-off.

Functional modes include normal operation (with UVLO protection at 2.3–3.5 V VCC–IN_REF), low-power shutdown (<25 µA ICCSD when SHDN <1.5 V), and optional parallel configuration (IN_A/IN_B tied, OUT_A/OUT_B tied) to double drive current. The SOIC-8 package features pin 1 (IN_REF) as dedicated input ground - distinct from standard gate drivers where pin 1 is NC - allowing backward-compatible layout when connected to VEE.

Key Specifications

Parameter	Value and Actual Design Meaning
VCC to VEE Range	3.5 V to 14 V - sets usable gate-drive voltage window; supports 5 V, 12 V, and 15 V systems with margin.
Peak Sink/Source Current	5 A sink / 3 A source per channel - enables fast charging/discharging of large MOSFET gates (e.g., >10 nF) at high switching frequencies.
Propagation Delay	25 ns typical (td1/td2, CLOAD = 2 nF) - ensures tight timing control in synchronous rectification and phase-shifted topologies.
Rise/Fall Time	14 ns rise / 12 ns fall (CLOAD = 2 nF) - minimizes switching losses and EMI in high-frequency SMPS designs.
Input Thresholds	VIH = 2.2 V, VIL = 0.8 V - guarantees reliable TTL-level interfacing with PWM controllers and digital isolators.
UVLO Threshold	2.3 V (rising), 2.9 V (falling) - prevents erratic operation during brown-out conditions with 230 mV hysteresis.
Shutdown Current	25 µA max (ICCSD) - enables low-power fault recovery and thermal management without external circuitry.

Pinout & Package

LM5110-3MX/NOPB uses an 8-pin SOIC package (4.90 mm × 3.91 mm) with exposed pad not present. Pin functions are validated per TI SNVS255B datasheet Rev. B (September 2016).

Pin	Circuit Role	Design Meaning
1 (IN_REF)	Input Ground Reference	Reference node for all logic inputs; connects to controller ground in split-supply mode or to VEE in single-supply mode.
2 (IN_A)	Inverting Logic Input	Drives OUT_A with inverted polarity; TTL-compatible, no internal pullup/pulldown.
3 (VEE)	Output Power Ground	Sinks output current; may be biased negative (≤ −4 V vs IN_REF) to enable negative VGS for enhanced MOSFET turn-off.
4 (IN_B)	Noninverting Logic Input	Drives OUT_B with same polarity; TTL-compatible, no internal pullup/pulldown.
5 (SHDN)	Shutdown Control Input	Active-low TTL input; pulls below 1.5 V to disable both outputs and reduce ICC to ≤25 µA.
6 (VCC)	Positive Supply Rail	Supplies output stage; requires local 100-nF + 220-nF ceramic bypass between VCC–IN_REF and VCC–VEE.
7 (OUT_A)	Inverting Output Driver	Sources up to 3 A / sinks up to 5 A; swings from VCC to VEE; connects directly to gate of high-side N-MOSFET.
8 (OUT_B)	Noninverting Output Driver	Sources up to 3 A / sinks up to 5 A; swings from VCC to VEE; connects directly to gate of low-side N-MOSFET.

Key Features

Feature	Design Value
Compound CMOS/Bipolar Output Stage	Combines MOS (rail-to-rail swing) and bipolar (high peak current near VGS(th)) devices to stabilize drive current over temperature and voltage.
Dedicated IN_REF and VEE Pins	Enables true split-supply operation: IN_REF ties to controller ground, VEE ties to negative bias rail (e.g., −3 V), allowing VGS(off) < 0 V.
Independent TTL-Compatible Inputs	IN_A and IN_B accept 0.8 V/2.2 V thresholds with 400 mV hysteresis - eliminates need for level shifters when interfacing with 3.3 V or 5 V controllers.
Parallel Operation Support	IN_A/IN_B and OUT_A/OUT_B can be shorted on PCB to double drive current (10 A sink / 6 A source) with <1% efficiency penalty.
Undervoltage Lockout + Shutdown	UVLO disables outputs if VCC–IN_REF drops below 2.3 V; SHDN pin provides system-level fault response with <25 µA standby current.

Applications

Synchronous Rectifier Gate Driver	Switch-Mode Power Supply Gate Driver
Use Scenario: High-efficiency AC/DC or DC/DC converter using synchronous rectification with N-channel MOSFETs on secondary side. IC Role / Device Role / Timing Role: LM5110-3MX/NOPB drives high-side and low-side synchronous rectifiers with precise timing - IN_A (inverting) controls high-side FET, IN_B (noninverting) controls low-side FET - avoiding shoot-through. Use Value: Negative VEE capability enables −3 V gate turn-off bias, reducing body diode conduction and improving efficiency by ≥0.5% at 100 kHz.	Use Scenario: Isolated flyback or forward converter with primary-side N-MOSFET switching at 200–500 kHz. IC Role / Device Role / Timing Role: LM5110-3MX/NOPB serves as isolated gate driver interface between PWM controller and power MOSFET, translating logic-level signals into high-current gate pulses. Use Value: 25 ns propagation delay and 14 ns rise time minimize dead-time uncertainty, enabling tighter duty cycle control and higher power density.
Solenoid and Motor Driver Interface	High-Frequency Class-D Audio Amplifier Gate Driver
Use Scenario: 24 V industrial solenoid or brushed DC motor control requiring rapid turn-on/turn-off and inductive kickback suppression. IC Role / Device Role / Timing Role: LM5110-3MX/NOPB drives half-bridge N-MOSFET pair - IN_A controls upper FET (inverting), IN_B controls lower FET (noninverting) - with independent shutdown for emergency stop. Use Value: 5 A sink current ensures sub-100 ns turn-off of large gate capacitance (≥5 nF), limiting inductive voltage spikes and protecting downstream components.	Use Scenario: Compact Class-D audio amplifier with >300 kHz switching frequency and low THD+N requirements. IC Role / Device Role / Timing Role: LM5110-3MX/NOPB delivers matched, low-jitter gate drive to half-bridge output stage - critical for minimizing crossover distortion and EMI. Use Value: Channel-to-channel propagation delay matching (<1 ns typical) and 12 ns fall time preserve PWM fidelity, supporting >100 dB PSRR at 20 kHz.

Synchronous Rectifier Gate Driver

Switch-Mode Power Supply Gate Driver

Use Scenario: High-efficiency AC/DC or DC/DC converter using synchronous rectification with N-channel MOSFETs on secondary side.

IC Role / Device Role / Timing Role: LM5110-3MX/NOPB drives high-side and low-side synchronous rectifiers with precise timing - IN_A (inverting) controls high-side FET, IN_B (noninverting) controls low-side FET - avoiding shoot-through.

Use Value: Negative VEE capability enables −3 V gate turn-off bias, reducing body diode conduction and improving efficiency by ≥0.5% at 100 kHz.

Use Scenario: Isolated flyback or forward converter with primary-side N-MOSFET switching at 200–500 kHz.

IC Role / Device Role / Timing Role: LM5110-3MX/NOPB serves as isolated gate driver interface between PWM controller and power MOSFET, translating logic-level signals into high-current gate pulses.

Use Value: 25 ns propagation delay and 14 ns rise time minimize dead-time uncertainty, enabling tighter duty cycle control and higher power density.

Solenoid and Motor Driver Interface

High-Frequency Class-D Audio Amplifier Gate Driver

Use Scenario: 24 V industrial solenoid or brushed DC motor control requiring rapid turn-on/turn-off and inductive kickback suppression.

IC Role / Device Role / Timing Role: LM5110-3MX/NOPB drives half-bridge N-MOSFET pair - IN_A controls upper FET (inverting), IN_B controls lower FET (noninverting) - with independent shutdown for emergency stop.

Use Value: 5 A sink current ensures sub-100 ns turn-off of large gate capacitance (≥5 nF), limiting inductive voltage spikes and protecting downstream components.

Use Scenario: Compact Class-D audio amplifier with >300 kHz switching frequency and low THD+N requirements.

IC Role / Device Role / Timing Role: LM5110-3MX/NOPB delivers matched, low-jitter gate drive to half-bridge output stage - critical for minimizing crossover distortion and EMI.

Use Value: Channel-to-channel propagation delay matching (<1 ns typical) and 12 ns fall time preserve PWM fidelity, supporting >100 dB PSRR at 20 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
LM5110-3M/NOPB	Same silicon, identical electrical specs; differs only in tape-and-reel packaging (LM5110-3MX/NOPB = cut-tape, LM5110-3M/NOPB = reel).	No functional difference; both support SOIC-8, same pinout, same thermal performance (RθJA = 114°C/W).	Select LM5110-3MX/NOPB for prototyping or low-volume builds; LM5110-3M/NOPB for automated SMT production.
UCC27524ADRV	4-A sink / 4-A source, dual noninverting, no IN_REF pin, no negative VEE support, WSON-8 package (3 mm × 3 mm).	Lacks split-supply capability and negative gate bias; suited for single-supply, space-constrained apps where VGS(off) ≥ 0 V is acceptable.	Choose UCC27524ADRV only if board area is critical and negative VGS is unnecessary; LM5110-3MX/NOPB remains preferred for robust turn-off in high-noise environments.

Compared with LM5110-3M/NOPB, LM5110-3MX/NOPB offers identical performance in cut-tape form for flexibility, while UCC27524ADRV trades negative drive capability and SOIC-8 compatibility for smaller footprint and symmetric sourcing - making it unsuitable for applications requiring VGS < 0 V or legacy SOIC layouts.

Availability

LM5110-3MX/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, switch-mode power supply gate drivers, and solenoid/motor drivers requiring stable component supply, long-term manufacturability, and TI-qualified automotive-grade traceability.

Supply support for LM5110-3MX/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, designing and manufacturing analog, embedded processing, and wireless chips for industrial, automotive, and consumer markets.

The LM5110 family was developed specifically for high-efficiency, high-frequency power conversion systems - emphasizing robust gate drive, negative bias capability, and thermal resilience in compact SOIC and WSON packages.

FAQ

What is the function of the IN_REF pin on the LM5110-3MX/NOPB?

The IN_REF pin on the LM5110-3MX/NOPB serves as the dedicated ground reference for all logic inputs (IN_A, IN_B, SHDN). It enables flexible supply configurations: in single-supply operation, IN_REF is tied to VEE; in split-supply operation, IN_REF connects to controller ground while VEE is biased negatively - allowing independent input referencing and true negative gate drive. This architecture is essential for noise immunity in high-dv/dt environments.

Can the LM5110-3MX/NOPB drive both high-side and low-side N-channel MOSFETs in a half-bridge?

Yes, the LM5110-3MX/NOPB is explicitly designed for half-bridge gate driving: its inverting Channel A (IN_A → OUT_A) and noninverting Channel B (IN_B → OUT_B) provide complementary logic control. When paired with appropriate bootstrap or isolated bias supplies, it safely drives high-side and low-side N-MOSFETs - with matched propagation delays (<1 ns skew) and independent shutdown (SHDN) for fault protection in the LM5110-3MX/NOPB implementation.

Does the LM5110-3MX/NOPB support negative gate drive voltage, and how is it implemented?

Yes, the LM5110-3MX/NOPB supports negative gate drive voltage via its separate VEE pin, which can be biased up to −4 V relative to IN_REF. This allows OUT_A and OUT_B to swing below ground - enabling negative VGS during MOSFET turn-off. Implementation requires connecting IN_REF to controller ground and VEE to a negative bias rail (e.g., −3 V), verified in TI's SNVS255B datasheet Figure 12 and Section 8.3.3.

What is the maximum capacitive load the LM5110-3MX/NOPB can drive while maintaining specified rise/fall times?

The LM5110-3MX/NOPB maintains 14 ns rise / 12 ns fall times with a 2-nF capacitive load per channel, as specified in Section 7.6 of the SNVS255B datasheet. For loads up to 10 nF, rise/fall times increase to ~25 ns (per Figure 7), remaining within practical limits for ≤1 MHz switching. Driving >10 nF loads requires external gate resistors to manage dV/dt and prevent oscillation - a design consideration confirmed in LM5110-3MX/NOPB application note SLVA672.

Is the LM5110-3MX/NOPB pin-compatible with other industry-standard gate drivers?

The LM5110-3MX/NOPB SOIC-8 footprint is mechanically compatible with industry-standard dual gate drivers, but pin 1 (IN_REF) is unique: it replaces the NC pin found on most competitors. To achieve drop-in replacement, connect IN_REF to VEE on the PCB - matching the pinout behavior of legacy drivers while retaining full LM5110-3MX/NOPB functionality, as documented in TI's Layout Guidelines (Section 11.1).

LM5110-3MX/NOPB Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 3.5V ~ 14V

Logic Voltage - VIL, VIH:: 0.8V, 2.2V

Current - Peak Output (Source, Sink):: 3A, 5A

Input Type:: Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 14ns, 12ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

LM5110-3MX/NOPB FAQ

1.How can I place an order for LM5110-3MX/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM5110-3MX/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM5110-3MX/NOPB reliable?

The price and inventory of LM5110-3MX/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5110-3MX/NOPB is usually 5 days.

3.What payment methods are accepted for LM5110-3MX/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5110-3MX/NOPB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LM5110-3MX/NOPB?

LM5110-3MX/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM5110-3MX/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM5110-3MX/NOPB?

For technical support, including LM5110-3MX/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5110-3MX/NOPB requirements.

6.How does Aetrix verify that LM5110-3MX/NOPB is sourced from the original manufacturer or authorized distributors?

All LM5110-3MX/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5110-3MX/NOPB meets industry standards.

7.What is the process for return or replacement of LM5110-3MX/NOPB?

All LM5110-3MX/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5110-3MX/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM5110-3MX/NOPB part is unused and in its original packaging.

Return procedure for LM5110-3MX/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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