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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Texas Instruments LM5111-4MY/NOPB

Name: LM5111-4MY/NOPB
Brand: Texas Instruments
SKU: LM5111-4MY/NOPB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: LM5111-4MY/NOPB

Manufacturer:: Texas Instruments

Category:: Gate Drivers

Package:: 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: LM5111-4MY/NOPB.pdf

Description:: IC GATE DRVR LOW-SIDE 8MSOP

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Product details

Overview

LM5111-4MY/NOPB from Texas Instruments is a dual-channel, high-current, compound-output gate driver IC designed to independently drive N-channel and P-channel MOSFETs in synchronous rectifier and half-bridge configurations. It delivers 3-A source / 5-A sink peak current per channel, features TTL-compatible inputs, 25-ns typical propagation delay, and UVLO configured for PFET-on/NFET-off safety during undervoltage (V_CC–V_EE < 2.9 V). It is used in high-frequency switch-mode power supplies where precise timing and robust gate drive are critical.

For engineers reviewing the LM5111-4MY/NOPB datasheet, LM5111-4MY/NOPB pinout, LM5111-4MY/NOPB application, or LM5111-4MY/NOPB equivalent, key selection criteria include its unique UVLO behavior (OUT_A high / OUT_B low in lockout), compound CMOS/bipolar output architecture, SOIC-8 and MSOP-PowerPAD package options, thermal performance (R_θJA = 112.2°C/W in SOIC), and compatibility with industry-standard drivers like TC4426 and UCC2732x.

Technical Context

The LM5111-4MY/NOPB implements two independent totem-pole output stages, each combining MOS and bipolar transistors in parallel to maintain stable drive current across temperature and voltage. Its logic configuration is fixed: IN_A controls an inverting channel (OUT_A), while IN_B controls a noninverting channel (OUT_B), enabling complementary PFET/NFET drive without external logic inversion.

UVLO is implemented as a differential comparator monitoring V_CC–V_EE, with rising threshold at 2.9 V and 230-mV hysteresis; unlike LM5111-1/2/3, the -4 variant asserts OUT_A high and holds OUT_B low during UVLO-enabling safe high-side PFET turn-off and low-side NFET turn-on prevention in bootstrap or floating supply topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CC Operating Range	3.5 V to 14 V - supports common 5-V, 12-V, and 15-V gate drive rails with 1-V margin below absolute max (15 V)
UVLO Threshold (Rising)	2.9 V typical - ensures reliable disablement before MOSFET threshold voltage is compromised
Peak Sink Current	5 A per channel - enables fast discharge of large gate capacitances (e.g., >30 nC) at high switching frequencies
Peak Source Current	3 A per channel - sufficient for rapid charging of high-C_iss MOSFETs without excessive gate resistor dependence
Propagation Delay	25 ns typical (C_L = 2 nF) - minimizes timing skew between channels and supports >10-MHz PWM control loops
Rise/Fall Time	14 ns / 12 ns typical (C_L = 2 nF) - reduces switching losses and EMI by limiting dV/dt slew rate control
Input Threshold	V_IL = 0.8 V, V_IH = 2.2 V - ensures robust noise immunity with standard TTL and CMOS logic interfaces

Pinout & Package

LM5111-4MY/NOPB is packaged in an 8-pin SOIC (5.00 mm × 6.00 mm) with exposed pad for thermal enhancement. Pin 1 and Pin 8 are No Connect (N/C); VEE serves as the common ground reference for both inputs and outputs; VCC supplies the positive rail; IN_A and IN_B accept independent TTL-compatible control signals; OUT_A and OUT_B drive external MOSFET gates with rail-to-rail swing (V_CC to V_EE).

Pin/Terminal	Circuit Role	Design Meaning
1, 8 (N/C)	No Connection	Must remain unconnected; no internal circuitry attached
2 (IN_A)	Inverting Input	Drives OUT_A with inverted logic: high input → low output; TTL-compatible thresholds
3 (VEE)	Ground Reference	Common return path for inputs, outputs, and bypass capacitors; must be low-inductance connection to power ground
4 (IN_B)	Noninverting Input	Drives OUT_B with same logic polarity: high input → high output; TTL-compatible thresholds
5 (OUT_B)	Noninverting Output	Sinks 5 A / sources 3 A; swings from V_CC to V_EE; drives NFET gates directly
6 (VCC)	Positive Supply	Power rail for output stage; requires local 0.1-µF ceramic + 1-µF bulk bypass to suppress high di/dt transients
7 (OUT_A)	Inverting Output	Sinks 5 A / sources 3 A; swings from V_CC to V_EE; configured to drive PFET gates in UVLO-safe mode

Key Features

Feature	Design Value
Compound CMOS/Bipolar Output Stage	Combines MOS rail-to-rail swing with bipolar high-current capability near V_GS(th), reducing drive variation over temperature and supply voltage
UVLO Configuration (LM5111-4)	OUT_A forced high and OUT_B forced low during undervoltage - enables fail-safe PFET turn-on and NFET turn-off in high-side gate drive applications
Parallel Operation Support	Both channels can be connected in parallel (inputs and outputs tied) to deliver 6-A source / 10-A sink, doubling drive strength without added components
TTL-Compatible Inputs	VIH = 2.2 V, VIL = 0.8 V, 400-mV hysteresis - eliminates need for level shifters when interfacing with microcontrollers or PWM controllers
Thermally Enhanced SOIC	Exposed pad design (LM5111-4MY/NOPB) lowers R_θJA to 112.2°C/W - improves reliability in continuous high-duty-cycle power supply designs

Applications

High-Frequency Synchronous Rectification	Isolated DC-DC Converter Gate Drive
Use Scenario: Driving synchronous rectifier MOSFETs in LLC resonant or phase-shifted full-bridge converters operating above 300 kHz. IC Role / Device Role / Timing Role: Dual-channel gate driver providing precisely timed, high-current gate pulses to replace Schottky diodes - OUT_A (inverting) controls high-side PFET, OUT_B (noninverting) controls low-side NFET. Use Value: Reduces conduction losses by >40% vs. diode rectification and enables zero-voltage switching (ZVS) through accurate dead-time management.	Use Scenario: Driving primary-side MOSFETs in flyback or forward converters using transformer-isolated gate drive signals. IC Role / Device Role / Timing Role: Receiving isolated logic-level signals (e.g., from optocoupler or gate drive transformer secondary) and amplifying them into high-current gate drive for power switches. Use Value: Eliminates need for discrete transistor buffers; maintains fast edge rates (<25 ns) despite isolation-induced signal degradation.
Half-Bridge Motor Control	High-Density POL (Point-of-Load) Regulator
Use Scenario: Controlling brushed DC or BLDC motor phases in compact industrial actuators requiring bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: Providing complementary high- and low-side gate drive with built-in UVLO safety - OUT_A drives upper PFET, OUT_B drives lower NFET in half-bridge topology. Use Value: Prevents shoot-through during brown-out conditions via active high-side disable and low-side hold-off, improving system fault tolerance.	Use Scenario: Enabling ultra-fast transient response in server VRMs and FPGA core supplies with 500-kHz+ switching frequencies. IC Role / Device Role / Timing Role: Serving as final-stage gate buffer between digital PWM controller and high-Qg power MOSFETs (e.g., 50–100 nC), minimizing gate drive loop inductance. Use Value: Achieves <15-ns rise/fall times even with 3-nF effective gate load, supporting sub-100-ns dead time and <1% duty cycle resolution.

High-Frequency Synchronous Rectification

Isolated DC-DC Converter Gate Drive

Use Scenario: Driving synchronous rectifier MOSFETs in LLC resonant or phase-shifted full-bridge converters operating above 300 kHz.

IC Role / Device Role / Timing Role: Dual-channel gate driver providing precisely timed, high-current gate pulses to replace Schottky diodes - OUT_A (inverting) controls high-side PFET, OUT_B (noninverting) controls low-side NFET.

Use Value: Reduces conduction losses by >40% vs. diode rectification and enables zero-voltage switching (ZVS) through accurate dead-time management.

Use Scenario: Driving primary-side MOSFETs in flyback or forward converters using transformer-isolated gate drive signals.

IC Role / Device Role / Timing Role: Receiving isolated logic-level signals (e.g., from optocoupler or gate drive transformer secondary) and amplifying them into high-current gate drive for power switches.

Use Value: Eliminates need for discrete transistor buffers; maintains fast edge rates (<25 ns) despite isolation-induced signal degradation.

Half-Bridge Motor Control

High-Density POL (Point-of-Load) Regulator

Use Scenario: Controlling brushed DC or BLDC motor phases in compact industrial actuators requiring bidirectional torque and regenerative braking.

IC Role / Device Role / Timing Role: Providing complementary high- and low-side gate drive with built-in UVLO safety - OUT_A drives upper PFET, OUT_B drives lower NFET in half-bridge topology.

Use Value: Prevents shoot-through during brown-out conditions via active high-side disable and low-side hold-off, improving system fault tolerance.

Use Scenario: Enabling ultra-fast transient response in server VRMs and FPGA core supplies with 500-kHz+ switching frequencies.

IC Role / Device Role / Timing Role: Serving as final-stage gate buffer between digital PWM controller and high-Qg power MOSFETs (e.g., 50–100 nC), minimizing gate drive loop inductance.

Use Value: Achieves <15-ns rise/fall times even with 3-nF effective gate load, supporting sub-100-ns dead time and <1% duty cycle resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-current gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC27324DR	3-A source / 3-A sink; no UVLO; dual noninverting only; SOIC-8	Lacks UVLO safety and asymmetric drive capability; unsuitable for PFET/NFET complementary drive	Select only if UVLO is handled externally and matched sourcing/sinking suffices
TC4427ACOA	1.2-A source/sink; dual inverting; no UVLO; SOIC-8; higher R_DS(on)	Lower drive strength limits use to <10-nC MOSFETs and <1-MHz operation; no safety shutdown	Choose for cost-sensitive, low-power applications where LM5111-4MY/NOPB's 5-A sink is unnecessary

Compared with UCC27324DR and TC4427ACOA, LM5111-4MY/NOPB provides uniquely asymmetric 3-A/5-A drive, integrated UVLO with PFET-safe behavior, and compound output architecture - making it the only option among the three qualified for high-efficiency synchronous rectifiers and high-reliability half-bridge systems.

Availability

LM5111-4MY/NOPB is available at Aetrix Electronics and suitable for high-frequency switch-mode power supplies, synchronous rectifier modules, and half-bridge motor drivers requiring stable component supply, long-term manufacturability, and TI-qualified automotive-grade traceability.

Supply support for LM5111-4MY/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of experience in high-reliability power conversion ICs.

The LM5111 product line was developed specifically for high-efficiency, high-frequency power supply gate driving - emphasizing robust peak current delivery, thermal resilience, and safety-critical UVLO behavior across automotive, industrial, and computing applications.

FAQ

What is the UVLO behavior of LM5111-4MY/NOPB, and how does it differ from other LM5111 variants?

The LM5111-4MY/NOPB features a unique UVLO configuration: when V_CC–V_EE falls below 2.9 V, OUT_A is actively driven high while OUT_B is held low. This differs from LM5111-1/2/3, which pull both outputs low in UVLO. That behavior enables safe high-side PFET turn-on and prevents low-side NFET activation during brown-out - a critical feature for half-bridge and synchronous rectifier topologies. LM5111-4MY/NOPB implements this via internal logic that overrides normal input-to-output mapping during undervoltage.

Can LM5111-4MY/NOPB drive both N-channel and P-channel MOSFETs simultaneously in a single half-bridge?

Yes. LM5111-4MY/NOPB is explicitly designed for complementary drive: its IN_A input controls an inverting channel (OUT_A), ideal for driving a high-side P-channel MOSFET, while IN_B controls a noninverting channel (OUT_B), suited for a low-side N-channel MOSFET. The device's rail-to-rail output swing (V_CC to V_EE) and asymmetric 3-A source / 5-A sink capability ensure strong turn-on and turn-off performance for both devices. This eliminates external inverters and simplifies layout in space-constrained half-bridge designs.

What are the recommended bypass capacitor values and placement for LM5111-4MY/NOPB?

Texas Instruments specifies two mandatory bypass capacitors across VCC and VEE: a 0.1-µF ceramic capacitor placed immediately adjacent to pins 6 and 3 (VCC and VEE), and a second 1-µF or larger low-ESR ceramic capacitor located nearby. Both must be surface-mount and connected with minimal trace length to avoid inductance. This dual-capacitor strategy suppresses high-frequency noise from the 5-A sink transients and supplies peak current during fast gate charging. Failure to implement both capacitors risks output ringing, false triggering, or thermal overstress in LM5111-4MY/NOPB.

Is LM5111-4MY/NOPB pin-compatible with industry-standard gate drivers such as TC4426 or UCC2732x?

Yes - LM5111-4MY/NOPB uses the standard SOIC-8 footprint and pinout defined for dual gate drivers: pins 1/8 (N/C), 2 (IN_A), 3 (VEE), 4 (IN_B), 5 (OUT_B), 6 (VCC), 7 (OUT_A). This matches TC4426A/27A/28A and UCC27323/27324/27325 pin-for-pin. However, functional compatibility requires verification: LM5111-4MY/NOPB's inverting/noninverting configuration and UVLO behavior differ from those parts, so direct substitution may require logic rework or safety validation. Always confirm signal polarity and fault response before drop-in replacement.

How does the compound CMOS/bipolar output stage in LM5111-4MY/NOPB improve performance over conventional drivers?

The compound output stage integrates MOS and bipolar transistors in parallel per channel: the MOS device delivers rail-to-rail voltage swing and low R_DS(on), while the bipolar device provides high peak current near the MOSFET's V_GS(th) region where MOS transistors exhibit poor gain. This hybrid architecture reduces output current variation by >50% across −40°C to +125°C and 3.5–14 V V_CC, ensuring consistent gate drive strength under real-world thermal and supply conditions. As a result, LM5111-4MY/NOPB maintains tight timing margins and low switching loss across wide operating ranges - a key advantage over single-technology drivers like TC4427 or UCC27324.

LM5111-4MY/NOPB Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: -

Package/Case:: 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 3.5V ~ 14V

Logic Voltage - VIL, VIH:: 0.8V, 2.2V

Current - Peak Output (Source, Sink):: 3A, 5A

Input Type:: Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 14ns, 12ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-HVSSOP

LM5111-4MY/NOPB FAQ

1.How can I place an order for LM5111-4MY/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM5111-4MY/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM5111-4MY/NOPB reliable?

The price and inventory of LM5111-4MY/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5111-4MY/NOPB is usually 5 days.

3.What payment methods are accepted for LM5111-4MY/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5111-4MY/NOPB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LM5111-4MY/NOPB?

LM5111-4MY/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM5111-4MY/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM5111-4MY/NOPB?

For technical support, including LM5111-4MY/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5111-4MY/NOPB requirements.

6.How does Aetrix verify that LM5111-4MY/NOPB is sourced from the original manufacturer or authorized distributors?

All LM5111-4MY/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5111-4MY/NOPB meets industry standards.

7.What is the process for return or replacement of LM5111-4MY/NOPB?

All LM5111-4MY/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5111-4MY/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM5111-4MY/NOPB part is unused and in its original packaging.

Return procedure for LM5111-4MY/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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