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Texas Instruments LM5112MY/NOPB
- Part No.:
- LM5112MY/NOPB
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Datasheet:
-
LM5112MY/NOPB.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,180
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Product details
Overview
LM5112MY/NOPB from Texas Instruments is a high-speed, single-channel MOSFET gate driver optimized for low-side switching in high-frequency DC/DC and AC/DC power supplies. It delivers 7-A peak sink and 3-A peak source current, achieves 14-ns rise and 12-ns fall times into 2-nF load, and operates with 25-ns typical propagation delay. Its dual-input architecture (IN and INB) supports both inverting and non-inverting logic configurations in a compact 6-pin WSON (3 mm × 3 mm) package.
For engineers reviewing the LM5112MY/NOPB datasheet, LM5112MY/NOPB pinout, LM5112MY/NOPB application, or LM5112MY/NOPB equivalent, this page provides verified technical context, real-world timing performance, split-supply operation guidance, thermal resistance data (RθJA = 40°C/W), and validated alternative options for gate drive design in solar microinverters, motor drives, and high-efficiency SMPS.
Technical Context
The LM5112MY/NOPB uses a compound CMOS-bipolar output stage to maintain stable peak current across temperature and voltage - bipolar devices dominate Miller plateau drive, while MOS devices ensure rail-to-rail swing from VEE to VCC. Its dedicated IN_REF pin enables true split-supply operation: IN_REF connects to controller ground, while VEE connects to negative bias (up to 14 V below VCC), enabling robust negative VGS turn-off.
Undervoltage lockout (UVLO) activates at 2.4–3.5 V (VCC–IN_REF), with 230-mV hysteresis to prevent brown-out oscillation. Input thresholds are TTL-compatible (VIH = 2.3 V, VIL = 0.8 V), and logic mode selection is hardware-defined: INB active + IN pulled to VCC enables inverting mode; IN active + INB tied to IN_REF enables non-inverting mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 3.5 V to 14 V - sets minimum gate drive voltage for reliable MOSFET turn-on and maximum rating for transient margin. |
| Peak Sink/Source Current | 7 A sink / 3 A source - enables sub-20 ns switching of MOSFETs with >2 nF total gate charge (e.g., 30 nC at 12 V). |
| Rise/Fall Time | 14 ns rise / 12 ns fall (2-nF load) - directly reduces switching losses in 300-kHz+ SMPS designs. |
| Propagation Delay | 25 ns typical (low-to-high & high-to-low) - supports precise timing control in synchronous rectification and phase-shifted topologies. |
| UVLO Threshold | 2.4–3.5 V (VCC–IN_REF) with 230-mV hysteresis - prevents partial turn-on during supply ramp-up or dropout. |
| Input Thresholds | VIH = 2.3 V, VIL = 0.8 V - ensures compatibility with standard PWM controllers and microcontrollers without level-shifting. |
| Thermal Resistance | RθJA = 40°C/W (WSON package) - allows ≤138 mW dissipation with only 5.5°C junction rise above ambient in well-designed PCB layouts. |
Pinout & Package
LM5112MY/NOPB is packaged in a thermally enhanced 6-pin WSON (NGG) with 3.00 mm × 3.00 mm body size and exposed die pad bonded to VEE. The exposed pad must be soldered to a PCB copper area connected to VEE for optimal thermal performance (RθJB = 29.3°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN | Non-inverting input | TTL-compatible control input; pull to VCC when unused to prevent floating and spurious output transitions. |
| INB | Inverting input | TTL-compatible control input; tie to IN_REF when unused to disable inverting mode and avoid noise coupling. |
| OUT | Gate drive output | Drives MOSFET gate between VEE and VCC; capable of 7-A sink/3-A source into capacitive loads. |
| VEE | Power ground / negative rail | Return path for output current; connect to power ground (single supply) or negative bias (split supply up to 14 V below VCC). |
| IN_REF | Input reference ground | Ground reference for logic inputs; isolate from VEE in split-supply configs to prevent ground loop interference with controller signals. |
| VCC | Positive supply input | Gate drive supply; requires local 100-nF low-ESR capacitor between VCC and VEE to support high di/dt transients. |
Key Features
| Feature | Design Value |
|---|---|
| Dual logic inputs (IN/INB) | Enables hardware-selectable inverting or non-inverting gate drive using one device - eliminates need for external inverters or layout variants. |
| Compound CMOS-bipolar output | Reduces output current variation over temperature and voltage by combining MOS rail-swing fidelity with bipolar Miller-region current density. |
| Dedicated IN_REF pin | Allows independent grounding of logic and power sections - critical for noise immunity in isolated or multi-rail systems with separate controller grounds. |
| UVLO with hysteresis | Prevents erratic output behavior during supply ramp-up or brown-out by holding OUT low until VCC–IN_REF exceeds 3.0 V after dropout. |
| Power-enhanced WSON package | 3 mm × 3 mm footprint with exposed thermal pad achieves RθJA = 40°C/W - supports higher continuous drive capability than MSOP alternatives in space-constrained designs. |
Applications
| Solar Microinverter Gate Drive | High-Frequency DC/DC Converter |
|---|---|
|
Use Scenario: Driving low-side N-channel MOSFETs in interleaved half-bridge stages of residential solar microinverters operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-current gate buffer that translates PWM signals from DSP-based controllers into fast, robust gate voltage transitions with minimal dead-time uncertainty. Use Value: 14-ns rise time and 7-A sink current reduce conduction overlap losses, improving conversion efficiency by ≥0.8% at full load compared to 1-A drivers. |
Use Scenario: Gate driving in 1-MHz synchronous buck converters for FPGA core power, where MOSFET gate charge exceeds 25 nC. IC Role / Device Role / Timing Role: Low-latency, high-di/dt driver ensuring precise edge alignment between high-side and low-side switches despite PCB trace inductance. Use Value: 25-ns propagation delay matching and <30-ns total edge transition enable stable operation at 1 MHz with <500-ps jitter accumulation across multiple phases. |
| AC/DC Server PSU | Solenoid/Motor Driver Interface |
|
Use Scenario: Driving superjunction MOSFETs in LLC resonant converter primary side within 1–3 kW telecom/server PSUs. IC Role / Device Role / Timing Role: Isolated gate driver interface (with transformer coupling) delivering high peak current to overcome high gate-drain capacitance (Crss) during zero-voltage switching transitions. Use Value: Bipolar-assisted Miller drive sustains >5-A current through the plateau region, reducing switching transition time by 35% versus MOS-only drivers. |
Use Scenario: Controlling 48-V brushed DC motors or industrial solenoids requiring rapid on/off cycling with high inductive kickback suppression. IC Role / Device Role / Timing Role: Robust low-side switch driver with negative VGS capability (VEE = –5 V) to ensure fast, reliable turn-off under back-EMF conditions. Use Value: Split-supply operation (IN_REF = 0 V, VEE = –5 V) enables –5 V gate drive, cutting turn-off delay by 40% and eliminating shoot-through risk during direction reversal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar MOSFET gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADR | 4-A source/4-A sink, dual-channel, no IN_REF pin, fixed non-inverting/inverting pairing per channel | Requires two channels for same logic flexibility; lacks dedicated input ground for split-supply isolation | Preferred when dual independent drivers are needed and system ground topology permits shared input/output reference. |
| TPS28225DR | 4.5-A source/4.5-A sink, 15-V max VCC, no UVLO hysteresis, MSOP-8 package only | Higher VCC rating but no thermal advantage over LM5112MY/NOPB's 40°C/W WSON; no IN_REF for true split-supply decoupling | Selected when higher supply voltage margin is required and board space allows larger MSOP footprint. |
Compared with UCC27524ADR and TPS28225DR, LM5112MY/NOPB uniquely combines single-channel simplicity, 7-A sink capability, dedicated IN_REF for ground-domain isolation, and industry-leading 40°C/W thermal performance in a 3 mm × 3 mm WSON - making it optimal for high-density, high-efficiency, and noise-sensitive gate drive implementations.
Availability
LM5112MY/NOPB is available at Aetrix Electronics and suitable for solar microinverters, high-frequency DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability validation.
Supply support for LM5112MY/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader focused on analog, embedded processing, and power management technologies, serving industrial, automotive, and communications markets with high-reliability components.
LM5112MY/NOPB belongs to TI's high-speed power driver product line, engineered specifically for minimizing switching losses in high-frequency, high-efficiency power conversion systems where gate drive strength, timing precision, and thermal efficiency are critical.
FAQ
What is the function of the IN_REF pin on the LM5112MY/NOPB?
The IN_REF pin serves as the dedicated ground reference for the LM5112MY/NOPB's logic inputs (IN and INB). In single-supply operation, it is tied to VEE (power ground); in split-supply configurations, it connects to the controller's logic ground while VEE connects to a negative bias rail - enabling galvanic separation between control and power domains to suppress noise coupling and improve EMI resilience. This design is integral to the LM5112MY/NOPB's ability to operate reliably in noisy industrial environments.
Can the LM5112MY/NOPB drive high-side MOSFETs directly?
No, the LM5112MY/NOPB is designed exclusively as a low-side gate driver. Its output stage swings between VEE and VCC, with VEE serving as the power return path - it lacks a floating supply or level-shifting circuitry required for high-side drive. To drive high-side N-channel MOSFETs, the LM5112MY/NOPB must be paired with an isolated bias supply or used in conjunction with a dedicated high-side driver like the LM510x series. Using LM5112MY/NOPB alone for high-side applications risks incomplete turn-on and device failure.
What is the maximum allowable voltage difference between VCC and IN_REF on the LM5112MY/NOPB?
The absolute maximum voltage difference between VCC and IN_REF is 15 V, but the recommended operating range is 3.5 V to 14 V (per Section 6.3). Exceeding 14 V risks overstressing internal protection circuits and degrading long-term reliability. The UVLO circuit monitors precisely this differential - activation occurs when VCC–IN_REF falls below 2.4 V (min), and hysteresis ensures re-enablement only above 3.0 V. Maintaining VCC–IN_REF within 3.5–14 V ensures full functionality and lifetime compliance per TI's production specifications for LM5112MY/NOPB.
How does the compound CMOS-bipolar output stage improve performance in the LM5112MY/NOPB?
The LM5112MY/NOPB's compound output stage integrates parallel MOS and bipolar transistors to leverage complementary strengths: the MOS device delivers rail-to-rail voltage swing (VEE to VCC) with low on-resistance at high VGS, while the bipolar device provides high peak current density during the Miller plateau region where VGS remains constant despite large dQ/dt. This synergy reduces total gate charge delivery time by up to 35% versus single-technology drivers and minimizes current variation across –40°C to 125°C - a key factor confirmed in LM5112MY/NOPB's production characterization data.
Is the LM5112MY/NOPB pin-compatible with the LM5112-Q1 automotive variant?
Yes, LM5112MY/NOPB and LM5112-Q1 share identical pinout, package dimensions (6-pin WSON NGG), electrical specifications, and functional behavior. The LM5112-Q1 adds AEC-Q100 Grade 1 qualification, automotive-grade flow manufacturing, and extended temperature validation (–40°C to 125°C junction), but all pin functions, timing parameters, and thermal metrics match LM5112MY/NOPB exactly. No PCB redesign is required when upgrading from LM5112MY/NOPB to LM5112-Q1 in automotive applications.
LM5112MY/NOPB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 3.5V ~ 14V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.3V
- Current - Peak Output (Source, Sink):
- 3A, 7A
- Input Type:
- Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 14ns, 12ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HVSSOP
LM5112MY/NOPB FAQ
1.How can I place an order for LM5112MY/NOPB through Aetrix?
Please submit a Request for Quotation (RFQ) for LM5112MY/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM5112MY/NOPB reliable?
The price and inventory of LM5112MY/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM5112MY/NOPB is usually 5 days.
3.What payment methods are accepted for LM5112MY/NOPB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM5112MY/NOPB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM5112MY/NOPB?
LM5112MY/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM5112MY/NOPB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM5112MY/NOPB?
For technical support, including LM5112MY/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM5112MY/NOPB requirements.
6.How does Aetrix verify that LM5112MY/NOPB is sourced from the original manufacturer or authorized distributors?
All LM5112MY/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM5112MY/NOPB meets industry standards.
7.What is the process for return or replacement of LM5112MY/NOPB?
All LM5112MY/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM5112MY/NOPB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM5112MY/NOPB part is unused and in its original packaging.
Return procedure for LM5112MY/NOPB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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