Texas Instruments LM5112Q1SD/NOPB

Overview

LM5112Q1SD/NOPB from Texas Instruments is an AEC-Q100 Grade 1 qualified automotive-grade single-channel MOSFET gate driver in a thermally enhanced 6-pin WSON (3 mm × 3 mm) package. It delivers 7-A peak sink and 3-A peak source current with 25-ns typical propagation delay, 14-ns rise time, and 12-ns fall time into 2-nF load-enabling high-frequency, low-loss switching in DC/DC converters and motor drives.

For engineers reviewing the LM5112Q1SD/NOPB datasheet, LM5112Q1SD/NOPB pinout, LM5112Q1SD/NOPB application, or LM5112Q1SD/NOPB equivalent, key selection criteria include its dual-input logic flexibility (inverting/non-inverting), split-supply capability via dedicated IN_REF ground, UVLO with 2.4–3.5-V rising threshold and 230-mV hysteresis, and rail-to-rail output swing from VEE to VCC.

Technical Context

The LM5112Q1SD/NOPB uses a compound CMOS-bipolar output stage: bipolar transistors deliver high peak current during the Miller plateau region, while MOS devices ensure rail-to-rail voltage swing. This architecture reduces output current variation across temperature and supply voltage.

Its dual-input structure (IN and INB) supports both inverting and non-inverting configurations without external logic; IN_REF provides isolated input reference for split-supply operation, enabling negative V_GS drive when VEE is biased below IN_REF-critical for robust MOSFET turn-off in high-noise automotive environments.

Key Specifications

Pinout & Package

LM5112Q1SD/NOPB is housed in a PowerPAD-enabled 6-pin WSON package (3.00 mm × 3.00 mm) with exposed die pad soldered to PCB for low thermal impedance. The package supports high-power density layouts and requires no heatsink for typical automotive loads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET gate driver applications.

Compared with LM5112SD/NOPB, the LM5112Q1SD/NOPB adds automotive qualification and extended temperature support without sacrificing performance; versus UCC27524DSDR, it trades dual outputs for superior single-channel drive strength, input flexibility, and robust automotive-specific protection features.

Availability

LM5112Q1SD/NOPB is available at Aetrix Electronics and suitable for automotive power conversion, solar microinverter gate drive, and industrial motor control applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q100 compliance.

Supply support for LM5112Q1SD/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader designing analog, embedded processing, and connectivity technologies for industrial, automotive, and communications markets.

The LM5112-Q1 product line delivers high-speed, high-current gate drivers optimized for automotive-grade reliability in powertrain, chassis, and ADAS systems-designed to meet stringent AEC-Q100 Grade 1 requirements and support high-frequency, low-loss switching topologies.

FAQ

What is the maximum allowable voltage difference between VCC and IN_REF for LM5112Q1SD/NOPB?

The LM5112Q1SD/NOPB specifies a maximum VCC–IN_REF differential of 14 V per Absolute Maximum Ratings. Operation beyond this risks permanent damage. For reliable functionality, TI recommends maintaining VCC–IN_REF within 3.5 V to 14 V per Recommended Operating Conditions. This range ensures proper UVLO function and avoids overstressing internal level-shift circuitry.

Can LM5112Q1SD/NOPB drive a high-side MOSFET directly?

No, LM5112Q1SD/NOPB is a low-side gate driver only. Its output stage swings between VEE and VCC, with VEE serving as the power ground reference. Driving a high-side N-channel MOSFET requires a floating supply referenced to the drain or source-functionality not supported by LM5112Q1SD/NOPB. Use dedicated high-side or half-bridge drivers (e.g., LM5109B) for such topologies.

How does the IN_REF pin improve noise immunity in LM5112Q1SD/NOPB?

The IN_REF pin isolates the logic input ground from the power output ground (VEE), preventing high di/dt return currents from coupling into control signals. In automotive systems, this separation blocks ground bounce from solenoid or motor switching from disturbing TTL-level inputs-ensuring clean, jitter-free gate drive timing even in electrically noisy under-hood environments.

What is the purpose of the exposed thermal pad on the LM5112Q1SD/NOPB WSON package?

The exposed pad on the LM5112Q1SD/NOPB WSON package is internally bonded to the die substrate and must be soldered to a PCB copper pour connected to VEE. This creates a low-thermal-resistance path (R_θJB = 29.3°C/W) from junction to board, enabling efficient heat dissipation. Without proper pad connection, junction temperature can exceed 125°C under 0.138-W typical load-risking thermal shutdown or long-term reliability degradation.

Does LM5112Q1SD/NOPB support both inverting and non-inverting operation simultaneously?

No. LM5112Q1SD/NOPB supports either inverting or non-inverting mode-not both concurrently. In non-inverting mode, use IN as the active input and tie INB to IN_REF; in inverting mode, use INB as the active input and tie IN to VCC. Table 1 in the datasheet confirms that simultaneous assertion of both inputs results in undefined output behavior-designs must configure one input as active and the other as terminated.